TLP3064(S)
2008-11-10 1
TOSHIBA PHOTOCOUPLER GaAlAs IRED & PHOTO-TRIAC
TLP3064(S)
OFFICE MACHINE
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
SOLID STATE RELAY
The TOSHIBA TLP3064(S) consists of a zero voltage crossing turn-on
photo-triac optically coupled to a GaAlAs infrared emitting diode in a six
lead plastic DIP package.
Peak Off-State Voltage : 600 V(Min)
Trigger LED Current : 3 mA(Max)
On-State Current : 100 mA(Max)
Isolation Voltage : 5000 Vrms(Min)
UL Recognized : UL1577,File No.E67349
SEMKO Approved : SS EN60065
SS EN60950, File No.9841113
BSI Approved : BS EN60065, File No.8385
BS EN60950, File No.8386
Option (D4) type
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Maximum operating insulation voltage: 890 VPK
Highest permissible over voltage: 8000 VPK
(Note):When a EN60747-5-2 approved type is needed,
please designate the "Option (D4)"
Construction Mechanical Rating
7.62 mm pitch
Standard Type
10.16 mm pitch
TLPxxxxF Type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.5 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.5 mm (Min)
Unit: in mm
JEDEC
TOSHIBA 11-7A9
Weight: 0.39 g (typ.)
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
1
2
34
6
ZC
Pin Configuration
(top view)
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Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Forward Current IF 30 mA
Forward Current Derating (Ta 25°C) IF /°C 0.3 mA /°C
Peak Forward Current (100 μs pulse, 100 pps) IFP 1 A
LED
Reverse Voltage VR 5 V
Junction Temperature Tj 125 °C
Off-State Output Terminal Voltage VDRM 600 V
Ta = 25°C 100
On-State RMS Current
Ta = 70°C
IT(RMS)
50
mA
On-State Current Derating (Ta25°C) IT/°C -1.1 mA /°C
Peak On-State Current (100 μs pulse, 120 pps) ITP 2 A
Peak Nonrepetitive Surge Current (Pw = 10 ms, DC = 10%) ITSM 1.2 A
DETECTOR
Junction Temperature Tj 115 °C
Storage Temperature Range Tstg 55 to 150 °C
Operating Temperature Range Topr 40 to 100 °C
Lead Soldering Temperature (10 s) Tsol 260 °C
Isolation Voltage (AC, 1 min., R.H.60%) (Note 2) BV
S 5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Device considered a two terminal device:Pins1, 2 and 3 shorted together and pin 4 and pin 6 shorted
together.
Recommended Operating Conditions
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Supply Voltage VAC — — 240 Vac
Forward Current IF 4.5 6 7.5 mA
Peak On-State Current ITP — — 1 A
Operating Temperature Topr 10 — 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP3064(S)
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Individual Electrical Characteristics (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Forward Voltage VF IF = 10 mA 1.2 1.4 1.7 V
Reverse Current IR V
R = 3 V 10 μA
LED
Capacitance CT V = 0, f = 1 MHz 30 pF
Peak Off-State Current IDRM VDRM = 600 V 10 1000 nA
Peak On-State Voltage VTM ITM = 100 mA 3.0 V
Holding Current IH — 0.6 — mA
Critical Rate of Rise of
Off-State Voltage dv / dt Vin = 240 V r m s , Ta = 85°C (Fig.1) 200 500 — V/μs
DETECTOR
Critical Rate of Rise of
Commutating Voltage dv / dt(c) Vin = 60 Vr m s , IT = 15 mA (Fig.1) 0.2 — V/μs
Coupled Electrical Characteristics (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Trigger LED Current IFT VT = 3 V ,Resistive Load — 3 mA
Inhibit Voltage VIH I
F = Rated IFT 50 V
Leakage in Inhibited State IIH I
F = Rated IFT , VT = Rated VDRM 600 μA
Capacitance (Input to Output) CS VS =0, f=1 MHz 0.8 pF
Isolation Resistance RS V
S = 500 V, R.H.60% 1×1012 1014 Ω
AC, 1 minute 5000
AC, 1 second, in oil 10000 Vrms
Isolation Voltage BVS
DC, 1 minute, in oil 10000 Vdc
Fig. 1 dv / dt test circuit
+5 V, VCC
dv / dt(c)
0V
Vin
dv / dt
Rin
RL
4 kΩ
1
2
3
6
4
VCC 120 Ω
+
TLP3064(S)
2008-11-10 4
TLP3064(S)
2008-11-10 5
TLP3064(S)
2008-11-10 6
RESTRICTIONS ON PRODUCT USE
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