SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 * High current gain 5 * Low collector-emitter saturation voltage 6 * Two (galvanic) internal isolated NPN/PNP Transistors in one package 2 1 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 DC collector current IC 200 mA Total power dissipation, T S = 115 C Ptot 250 mW Junction temperature Tj 150 C Storage temperature T stg V - 65...+150 Thermal Resistance Junction ambient 1) RthJA 275 Thermal resistance, chip case RthJC 140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -27-1997 SMBT 3904PN Electrical Characteristics at TA=25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 40 - - V(BR)CBO 40 - - Emitter-base breakdown voltage V(BR)EBO 6 - - I E = 10 A, I C = 0 Collector cutoff current I CBO - - 50 DC Characteristics per Transistor Collector-emitter breakdown voltage V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 10 A, IB = 0 nA VCB = 30 V, I E = 0 hFE DC current gain 1) - I C = 100 A, V CE = 1 V I C = 1 mA, V CE = 1 V 40 - - 70 - - I C = 10 mA, VCE = 1 V 100 - 300 I C = 50 mA, VCE = 1 V 60 - - I C = 100 mA, V CE = 1 V 30 - - VCEsat Collector-emitter saturation voltage1) V I C = 10 mA, I B = 1 mA - - 0.25 I C = 50 mA, I B = 5 mA - - 0.4 I C = 10 mA, I B = 1 mA 0.65 - 0.85 I C = 50 mA, I B = 5 mA - - 0.95 VBEsat Base-emitter saturation voltage 1) 1) Pulse test: t < 300s; D < 2% Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -27-1997 SMBT 3904PN Electrical Characteristics at TA=25C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 250 - - Ccb - - 4.5 Ceb - - 10 h11e 2 - 12 k h12e 0.1 - 10 10 -4 h21e 100 - 400 - h22e 1 - 60 s F - - 5 dB td - - 35 ns tr - - 35 t stg - - 225 tf - - 75 AC Characteristics per Transistor fT Transition frequency MHz I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Noise figure I C = 100 A, V CE = 5 V, R S = 1 k, f = 1 kHz, f = 200 Hz Delay time VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, I C = 10 mA, I B1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Fall time VCC = 3 V, I C = 10 mA, I B1=I B2 = 1mA Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -27-1997 SMBT 3904PN Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy 300 mW TS Ptot 200 TA 150 100 50 0 0 20 40 60 80 120 C 100 Kein 150 TA,TS Permissible Pulse Load R thJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 RthJS10 Ptotmax / PtotDC K/W 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 44 Au 1998-11-01 -27-1997 SMBT 3904PN DC current gain h FE = f (I C) Saturation voltage IC = f (VBEsat, VCEsat) VCE = 10V, normalized h FE = 10 EHP00765 10 1 h FE EHP00756 2 C 5 mA 10 2 5 125 C V BE V CE 25 C 10 0 10 1 -55 C 5 5 10 -1 10 -1 5 10 0 5 10 1 10 0 mA 10 2 2 0.2 0 0.4 0.6 C 0.8 1.0 V 1.2 V BE sat , V CE sat Short-circuit forward current Open-circuit output admittance transfer ratio h 21e = f(I C) h 22e = f (IC) VCE = 10V, f = 1MHz VCE = 10V, f = 1MHz EHP00759 10 3 h 21e h 12e 5 10 2 10 -4 5 5 10 1 -1 10 5 10 0 mA 10 10 -5 1 10 C Semiconductor Group Semiconductor Group EHP00758 10 -3 -1 5 10 0 mA 10 1 C 55 Au 1998-11-01 -27-1997 SMBT 3904PN Delay time t d = f (IC) Storage time t stg = f(IC) Rise time t r = f (I C) EHP00761 10 3 EHP00762 10 3 ns ns t r ,t d tr td ts 25 C 125 C h FE = 10 10 2 h FE = 20 10 10 2 VCC = 3 V h FE = 20 10 40 V 15 V 10 1 10 1 V BE = 2 V 0V 10 0 0 10 5 10 1 5 10 2 10 0 0 10 mA 10 3 5 10 1 5 10 2 mA 10 3 C C Fall time t f = f (I C) Rise time tr = f (IC) EHP00764 10 3 EHP00764 10 3 ns ns tr tr 25 C 10 2 25 C VCC = 40 V h FE = 10 125 C 10 2 10 1 10 0 0 10 VCC = 40 V h FE = 10 125 C 10 1 5 10 1 5 10 2 10 0 0 10 mA 10 3 C Semiconductor Group Semiconductor Group 5 10 1 5 10 2 mA 10 3 C 66 Au 1998-11-01 -27-1997 SMBT 3904PN Input impedance Open-circuit reverse voltage h 11e = f (IC) transfer ratio h12e = f (I C) VCE = 10V, f = 1kHz VCE = 10V, f = 1kHz EHP00757 10 2 h 11e EHP00760 10 2 s k h 22e 5 10 1 5 10 1 5 10 0 5 10 -1 10 -1 5 10 0 mA 10 10 0 -1 10 1 C Semiconductor Group Semiconductor Group 77 5 10 0 mA C 10 1 Au 1998-11-01 -27-1997