MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage IC Collector Current PC Collector Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range 6 V 200 mA 350 mW -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 60 V BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IB = 0 40 V BVEBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6 ICEX Collector Cut-off Current VCE = 30V, VEB = 3V hFE DC Current Gain * VCE = 1V, IC = 0.1mA VCE = 1V, IC = 1mA VCE = 1V, IC = 10mA VCE = 1V, IC = 50mA VCE = 1V, IC = 100mA V 50 40 70 100 60 30 nA 300 VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA VBE(sat) Base-Emitter Saturation Voltage * IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA Cob Output Capacitance VCB = 5V, IE = 0, f = 1MHz fT Current Gain-Bandwidth Product VCE = 20V, IC = 10mA, f = 100MHz NF Noise Figure IC = 100A, VCE = 5V, RS = 1K f = 10Hz to 15.7KHz 5 dB tON Turn On Time VCC = 3V, VBE = 0.5V IC = 10mA, IB1 = 1mA 70 ns tOFF Turn Off Time VCC = 3V, IC = 10mA, IB1 = IB2 = 1mA 250 ns 0.65 0.2 0.3 V V 0.85 0.95 V V 4 pF 300 MHz * Pulse Test: Pulse Width300s, Duty Cycle2% (c)2006 Fairchild Semiconductor Corporation MMBT3904K Rev. B 1 www.fairchildsemi.com Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 250 0.3 Vce=5V B=10 125C Vce(sat), Saturation Current,[V] hfe, Current Gain 200 75C 150 25C 100 50 0.1 1 10 0.2 125C 75C 0.1 25C 0.1 100 1 10 100 Collector Current, [A] Collector Current, [mA] Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector - Base Leakage Current Leakage current of Collector - Base(nA) 1.0 B=10 Vbe(sat), Saturation Current,[V] 0.9 0.8 0.7 25C 0.6 75C 0.5 125C 0.4 0.3 0.1 V CB = 30V 10 1 1 10 100 25 50 Collector Current, [A] 75 100 125 150 Temperature, ['C] Figure 5. Output Capacitance Figure 6. Power Dissipation vs Ambient Temperature 10 0.4 PD - Power Dissipation (W) Cob [pF], Capacitance IE = 0 f = 1M Hz 1 0.1 1 10 0.2 0.1 0.0 100 0 V C B [V], C ollector-B ase V oltage 25 50 75 100 125 150 O Temperature, [ C] 2 MMBT3904K Rev. B 0.3 www.fairchildsemi.com MMBT3904K NPN Epitaxial Silicon Transistor Typical Performance Characteristics MMBT3904K NPN Epitaxial Silicon Transistor Mechanical Dimensions 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters 3 MMBT3904K Rev. B www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 4 MMBT3904K Rev. B www.fairchildsemi.com MMBT3904K NPN Epitaxial Silicon Transistor TRADEMARKS