IGBT MODU ODULE MBM300GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). G2 E2 C2E1 E2 C1 Weight: 540(g) TERMINALS E1 G1 ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Symbol Unit MBM300GS12AW VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - V V 1,200 20 300 600 300 600 1,700 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) 2.94(30) A A W C C VRMS N.m (kgf.cm) (1) (2) (3) Notes:(1)RMS Current of Diode 90Arms max. (2)(3)Recommended Value 2.45N.m(25kgf.cm) CHARACTERISTICS Item (Tc=25C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA 500 VGE=20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=300A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =300mA Input Capacitance Cies pF 28,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.25 0.5 VCC=600V ms Turn On Time ton 0.4 0.7 RL=2.0W Switching Times Fall Time tf 0.25 0.35 RG=4.3W (4) 0.75 1.1 VGE=15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.5 IF=300A,VGE=0V Reverse Recovery Time trr 0.35 IF=300A,VGE=-10V, di/dt=400A/ms ms Junction to case Rth(j-c) C/W 0.073 Thermal Impedance IGBT 0.2 FWD Rth(j-c) Notes:(4) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. http://store.iiic.cc/ PDE-M300GS12AW-0 14V VGE=15V 13V12V 600 TYPICAL 14V VGE=15V 13V12V 600 Tc=125C Tc=25C 500 11V 400 300 Pc=1700W 200 Collector Current, Ic (A) 500 Collector Current, Ic (A) TYPICAL 11V 400 300 10V 200 10V 9V 100 100 9V 0 0 0 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL 6 4 Ic=600A Ic=300A 2 8 6 4 Ic=600A Ic=300A 2 0 0 5 10 15 20 0 600 Vcc=600V Ic =300A Tc=25C 15 20 VGE=0 Tc=25C Tc=125C Forward Current, IF (A) 500 10 10 TYPICAL TYPICAL 20 15 5 Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Collector to Emitter voltage vs. Gate to Emitter voltage Gate to Emitter Voltage, VGE (V) Tc=125C Tc=25C Collector to Emitter Voltage, VCE (V) Collector to Emitter Voltage, VCE (V) 10 8 0 10 8 6 4 2 Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage TYPICAL 10 0 10 8 6 4 2 400 300 200 5 100 0 0 0 500 1000 1500 2000 2500 0 1 2 3 4 5 Forward Voltage, VF (V) Forward voltage of free-wheeling diode Gate Charge, QG (nc) Gate charge characteristics PDE-M300GS12AW-0 http://store.iiic.cc/ TYPICAL TYPICAL 10 Vcc=600V VGE=15V RG=4.3W TC=25C Resistive Load Switching Time, t (ms) Switching Time, t (ms) 1.5 1 toff 0.5 VCC=600V VGE=15V IC=300A TC=25C Resistive Load toff ton 1 tr ton tf tf tr 0 0.1 0 100 200 300 1 400 10 100 Gate Resistance, RG (W) Switching time vs. Gate resistance Collector Current, IC (A) Switching time vs. Collector current TYPICAL TYPICAL 100 Vcc=600V VGE=15V RG=4.3W TC=125C Inductive Load 50 Etoff Etoff Switching Loss, Eton, Etoff (mJ/pulse) Switching Loss, Eton,Etoff, Err (mJ/pulse) 60 40 30 Eton 20 Err 10 0 0 100 200 300 Eton Err 10 VCC=600V VGE=15V IC =300A TC=125C Inductive Load 1 400 1 Gate Resistance, RG (W) Switching loss vs. Gate resistance Collector Current, IC (A) Switching loss vs. Collector current 1000 1 Transient Thermal Impedance, Rth(j-c) (C/W) Collector Current, Ic (A) 100 10 VGE=15V RG=4.3W TC125C 100 10 1 0.1 0 200 400 600 800 1000 1200 1400 Diode IGBT 0.1 0.01 0.001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance Collector to Emitter Voltage, VCE (V) Reverse biased safe operating area PDE-M300GS12AW-0 http://store.iiic.cc/ HITACHI POWER SEMICONDUCTORS Notices 1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. 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