PDE-M300GS12AW-0
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MBM300GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
F
FF
FEA
EAEA
EAT
TT
TU
UU
URE
RE
RE
RES
SS
S
* High speed and low saturation voltage.
* low noise due to built-in free-wheeling
diode - ultra soft fast recovery d i od e(USFD).
* Isolated head sink (terminal to base).
ABSOLUTE MAXIMUM RATINGS (Tc=25°C )
Item Symbol Unit MBM300GS12AW
Collector Emitter Voltage VCES V 1,200
Gate Emi tter Voltage VGES V±20
Collector Current DC IC300
1ms ICp A600
Forward Current DC IF 300 (1)
1ms IFM A600
Collector Power Dissipa tion Pc W 1,700
Junction Temperature Tj°C -40 ~ +150
Storage Temperature Tstg °C -40 ~ +125
Isolation Voltage VISO VRMS 2,500(AC 1 minute)
Screw Torque Terminals - 2.94(30) (2)
Mounting - N.m
(kgf.cm) 2.94(30) (3)
Notes:(1)RMS Current of Diode 90Arms max.
(2)(3)Recommended Value 2.45N.m(25kgf.cm)
CHARACTERISTICS (Tc=25°C )
Item Symbol Unit Min. Typ. Max. Test Conditions
Colle ctor Emitter Cut-Off Curre nt I CES mA - - 1.0 VCE=1,200V,VGE=0V
Gate Emi tter Leakage Current IGES nA - - ±500 VGE=±20V,VCE=0V
Collector Emitter Saturatio n Voltage VCE(sat) V-2.73.4I
C=300A,VGE=15V
Gate Emi tter Threshold Voltage VGE(TO) V--10V
CE=5V, IC =300mA
Input Capacitance Cies pF - 28,000 - VCE=10V,VGE=0V,f=1MHz
Rise Time tr- 0.25 0.5 VCC=600V
Turn On Time ton -0.40.7R
L=2.0W
Fall Time tf- 0.25 0.35 RG=4.3W (4)
Switching Times
Turn Off Time toff
ms
- 0.75 1.1 VGE=±15V
Peak Forward Voltage Drop VFM V-2.53.5I
F=300A,VGE=0V
Reverse Recovery Time trr ms--0.35I
F=300A,VGE=-10V, di/dt=400A/ms
IGBT Rth(j-c) - - 0.073
Thermal Impedance FWD Rth(j-c) °C/W --0.2 Junction to case
Notes:(4) RG value is the test cond ition ’s value for decision of the switching times, not recomm ended value.
Determine the suitable R
G val ue after the measurement of switch ing waveforms
(overshoot voltage,etc.)with appliance mounted.
Unit in mm
Weight: 540(g) TERMINALS
E1
C1
G1
E2 E2
G2
C2E1
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VGE=15V 13V12V
600
500
400
0246810
200
300
100
0
600
500
400
0246810
200
300
100
0
11V
TYPICAL
10V
9V
Collector Current, Ic (A)
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
Ic=300A
Ic=600A
10
8
6
4
2
00510 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Ic=600A
Ic=300A
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
001000 1500 2000
500 2500
TYPICAL TYPICAL
Vcc=600V
Ic =300A
Tc=25°C
Gate to Emitter Voltage, V
GE
(V)
Forward Current, I
F
(A)
Gate Charge, QG (nc)
Gate charge characteristics
300
200
400
600
500
100
00 1 2 3 4 5
Forward Voltage, VF (V)
Forward voltage of free-wheeling diode
10
8
6
4
2
00510 15 20
TYPICAL
Collector to Emitter Voltage, V
CE
(V)
Gate to Emitter Voltage, VGE (V)
Collector to Emitter voltage vs. Gate to Emitter voltage
TYPICAL
Tc=125°C
Collector to Emitter Voltage, VCE (V)
Collector current vs. Collector to Emitter voltage
PDE-M300GS12AW-0
Tc=25°C
14V 14V
Pc=1700W
VGE=15V 13V12V
11V
10V
9V
VGE=0
Tc=25°C
Tc=125°C
Tc=125°C
Tc=25°C
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1.5
1
0.5
00 100 200 300 400
TYPICAL
TYPICAL
TYPICAL
Switching Time, t (ms)
Switching Time, t (ms)
Collector Current, IC (A)
Switching time vs. Collector current
tr
tf
ton
toff
50
60
40
10
30
20
00 100 200 300 400
Switching Loss, Et
on
,Et
off
, E
rr
(mJ/pulse)
Collector Current, IC (A)
Switching loss vs. Collector current
10
1
0.1 110 100
Gate Resistance, RG (W)
Switching time vs. Gate resistance
tr
tf
TYPICAL
100
10
1110 100
Switching Loss, Et
on
, Et
off
(mJ/pulse)
Gate Resistance, RG (W)
Switching loss vs. Gate resistance
VCC=600V
VGE=±15V
IC =300A
TC=125°C
Inductive Load
1000
100
10
1
0.1
0 200 400 600 800 1000 1200 1400
Collector Current, Ic (A)
Collector to Emitter Voltage, VCE (V)
Reverse biased safe operating area
Etoff
Eton
1
0.1
0.01
0.001
0.001 0.01 0.1 1 10
Transient Thermal Impedance, R
th(j-c)
(°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
VGE=±15V
RG=4.3W
TC£125°C
PDE-M300GS12AW-0
Etoff
Eton
Err
Err
Vcc=600V
VGE=±15V
RG=4.3W
TC=125°C
Inductive Load
VCC=600V
VGE=±15V
IC=300A
TC=25°C
Resistive Load
toff
ton
Vcc=600V
V
GE
=±15V
R
G
=4.3W
T
C
=25°C
Resistive Load
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