TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
1
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 200 µA
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
TINUEULAVLOBMYSGNITAR
Repetitive peak off-state voltage (see Note 1)
TIC106D
TIC106M
TIC106S
TIC106N
VDRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC106D
TIC106M
TIC106S
TIC106N
VRRM
400
600
700
800
V
I)2 etoN ees( erutarepmet esac C°08 )woleb ro( ta tnerruc etats-no suounitnoC T(RMS) 5 A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3) IT(AV) 3.2 A
Surge on-state current at I)4 etoN ees( C°52 )woleb ro( TSM 30 A
Peak positive gate current (pulse width ≤ 300 µI)s GM 0.2 A
Peak gate power dissipation (pulse width ≤ 300 µP)s GM 1.3 W
Average gate power dissipation (see P)5 etoN G(AV) 0.3 W
Tegnar erutarepmet esac gnitarepO C-40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Tsdnoces 01 rof esac morf mm 6.1 erutarepmet daeL L230 °C
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current VD = rated VDRM RGK = 1 kΩTC = 110°C 400 µA
IRRM
Repetitive peak
reverse current VR= rated VRRM IG = 0 TC = 110°C 1 mA
IGT Gate trigger current VAA = 12 V RL= 100Ωtp(g) ≥ 20 µs 5 200 µA
VGT Gate trigger voltage
VAA = 12 V
tp(g) ≥ 20 µs
RL= 100Ω
RGK =1kΩ
TC = - 40°C 1.2
V
VAA = 12 V
tp(g) ≥ 20 µs
RL= 100Ω
RGK =1kΩ0.4 0.6 1
VAA = 12 V
tp(g) ≥ 20 µs
RL= 100Ω
RGK =1kΩ
TC = 110°C 0.2
IHHolding current
VAA = 12 V
Initiating IT = 10 mA
RGK =1kΩTC = - 40°C 8
mA
VAA = 12 V
Initiating IT = 10 mA
RGK =1kΩ5
VT
Peak on-state
voltage IT= 5 A (See Note 6) 1.7 V
dv/dt Critical rate of rise of
off-state voltage VD = rated VDRGK =1kΩTC = 110°C 10 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 3.5 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
OBSOLETE
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
3
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 1. Figure 2.
Figure 3. Figure 4.
AVERAGE ANODE ON-STATE CURRENT
TC - Case Temperature - °C
30 40 50 60 70 80 90 100 110
IT(AV) - Maximum Average Anode Forward Current - A
0
1
2
3
4
5
6TI20AA
DERATING CURVE
Φ = 180º
Continuous DC
Conduction
Angle
Φ
0° 180°
ANODE POWER DISSIPATED
IT - On-State Current - A
110100
PA - Anode Power Dissipated - W
1
10
100 TI20AB
ON-STATE CURRENT
vs
TJ = 110°C
SURGE ON-STATE CURRENT
Consecutive 50 Hz Half-Sine-Wave Cycles
110100
ITM - Peak Half-Sine-Wave Current - A
1
10
100 TI20AC
CYCLES OF CURRENT DURATION
vs
TC ≤ 80 °C
No Prior Device Conduction
Gate Control Guaranteed
TRANSIENT THERMAL RESISTANCE
Consecutive 50 Hz Half-Sine-Wave Cycles
110100
RθJC(t) - Transient Thermal Resistance - °C/W
0·1
1
10 TI20AD
CYCLES OF CURRENT DURATION
vs
OBSOLETE
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 5. Figure 6.
Figure 7.
GATE TRIGGER VOLTAGE
TC - Case Temperature - °C
-50-25 0 255075100125
VGT - Gate Trigger Voltage - V
0·2
0·4
0·6
0·8
0
1TC20AB
CASE TEMPERATURE
vs
VAA = 12 V
RL = 100 Ω
RGK = 1 kΩ
tp(g) ≥ 20 µs
HOLDING CURRENT
TC - Case Temperature - °C
-50 -25 0 25 50 75 100 125
I
H -
H
o
ldi
ng
C
urren
t
- m
A
0.1
1
10 TC20AD
CASE TEMPERATURE
vs
VAA = 12 V
RGK = 1 kΩ
Initiating IT = 10 mA
PEAK ON-STATE VOLTAGE
ITM - Peak On-State Current - A
0·1 1 10
VTM - Peak On-State Voltage - V
0.0
0.5
1.0
1.5
2.0
2.5 TC20AE
vs
PEAK ON-STATE CURRENT
TC = 25 °C
tp = 300 µs
Duty Cycle ≤ 2 %
OBSOLETE
