TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
PRODUCT INFORMATION
1
APRIL 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●5 A Continuous On-State Current
●30 A Surge-Current
●Glass Passivated Wafer
●400 V to 800 V Off-State Voltage
●Max IGT of 200 µA
K
A
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDC1ACA
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
RATINGSYMBOLVALUEUNIT
Repetitive peak off-state voltage (see Note 1)
TIC106D
TIC106M
TIC106S
TIC106N
VDRM
400
600
700
800
V
Repetitive peak reverse voltage
TIC106D
TIC106M
TIC106S
TIC106N
VRRM
400
600
700
800
V
Continuous on-state current at (or below) 80°C case temperature (see Note 2)IT(RMS)5A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)IT(AV)3.2A
Surge on-state current (see Note 4)ITM30 A
Peak positive gate current (pulse width ≤ 300 µs)IGM0.2A
Peak gate power dissipation (pulse width ≤ 300 µs)PGM1.3W
Average gate power dissipation (see Note 5)PG(AV)0.3W
Operating case temperature rangeTC-40 to +110°C
Storage temperature rangeTstg-40 to +125°C
Lead temperature 1.6 mm from case for 10 secondsTL230°C
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
2
APRIL 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
IDRMRepetitive peak
off-state currentVD = rated VDRMRGK = 1 kΩTC = 110°C400µA
IRRMRepetitive peak
reverse currentVR=rated VRRMIG = 0TC = 110°C1mA
IGTGate trigger currentVAA = 6 VRL= 100Ωtp(g) ≥ 20 µs60 200µA
VGTGate trigger voltage
VAA = 6 V
tp(g) ≥ 20 µsRL= 100Ω
RGK=1kΩTC = - 40°C 1.2
V
VAA = 6 V
tp(g) ≥ 20 µsRL= 100Ω
RGK=1kΩ0.40.6 1
VAA = 6 V
tp(g) ≥ 20 µsRL= 100Ω
RGK=1kΩTC = 110°C 0.2
IHHolding current
VAA = 6 V
Initiating IT = 10 mARGK=1kΩTC = - 40°C 8mA
VAA = 6 V
Initiating IT = 10 mARGK=1kΩ5
VTMPeak on-state
voltageITM=5A(See Note 6)1.7V
dv/dtCritical rate of rise of
off-state voltageVD = rated VDRGK=1kΩTC = 110°C10 V/µs
thermal characteristics
PARAMETERMINTYPMAXUNIT
RθJCJunction to case thermal resistance3.5°C/W
RθJAJunction to free air thermal resistance62.5°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
tgtGate-controlled
turn-on timeIT = 5 AIG = 10 mASee Figure 11.75 µs
tqCircuit-commutated
turn-off timeIT = 5 A
IRM = 8 AIG = 10 mA See Figure 2 7.7 µs
3
APRIL 1971 - REVISED MARCH 1997
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
PRODUCT INFORMATION
PARAMETER MEASUREMENT INFORMATION
Figure 1. Gate-controlled turn-on time
Figure 2. Circuit-commutated turn-off time
GRG
VA
30 V
IT
VGIG
DUT
6 ΩΩ
VA
VG
10%
90%
tgt
PMC1AA
G1 RG
VA
30 V
IA
6 ΩΩ
VG1 IG
DUT
G2
RG
VG2
TH1
R2
R1
0.1 µµF
to 0.5 µµF
G2 tP Synchronisation
IG
VK
(IRM Monitor)
0.1 ΩΩ
NOTES: A. Resistor R1 is adjusted for the specified value
of IRM.
B. Resistor R2 value is 30/IH, where IH is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
tP = 50 µs to 300 µs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, VG, of ≥ 20 V and duration of
10 µs to 20 µs.
VG1
VG2
IA
VA
IT
IRM
tq
VT0
0
tP
PMC1AB
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
4
APRIL 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5. Figure 6.
AVERAGE ANODE ON-STATE CURRENT
TC - Case Temperature - °C
30 40 50 60 70 80 90 100 110
IT(AV) - Maximum Average Anode Forward Current - A
0
1
2
3
4
5
6TI20AA
DERATING CURVE
ΦΦ = 180º
Continuous DC
Conduction
Angle
ΦΦ
0° 180°
M
A
X
C
O
N
T
I
N
U
O
U
S
A
N
O
D
E
P
O
W
E
R
D
I
S
S
I
P
A
T
E
D
IT - Continuous On-State Current - A
1 10 100
PA - Max Continuous Anode Power Dissipated - W
1
10
100 TI20AB
CONTINUOUS ON-STATE CURRENT
vs
TJ = 110°C
S
U
R
G
E
O
N
-
S
T
A
T
E
C
U
R
R
E
N
T
Consecutive 50 Hz Half-Sine-Wave Cycles
1 10 100
ITM - Peak Half-Sine-Wave Current - A
1
10
100 TI20AC
CYCLES OF CURRENT DURATION
vs
TC ≤≤ 80 °C
No Prior Device Conduction
Gate Control Guaranteed
T
R
A
N
S
I
E
N
T
T
H
E
R
M
A
L
R
E
S
I
S
T
A
N
C
E
Consecutive 50 Hz Half-Sine-Wave Cycles
1 10 100
Rθ
θJC(t) - Transient Thermal Resistance - °C/W
0·1
1
10 TI20AD
CYCLES OF CURRENT DURATION
vs
5
APRIL 1971 - REVISED MARCH 1997
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 7. Figure 8.
Figure 9. Figure 10.
G
A
T
E
T
R
I
G
G
E
R
C
U
R
R
E
N
T
TC - Case Temperature - °C
-50 -25 0 25 50 75 100 125
IGT - Gate Trigger Current - µA
10
100
TC20AA
CASE TEMPERATURE
vs
VAA = 6 V
RL = 100 ΩΩ
tp(g) ≥≥ 20 µs
G
A
T
E
T
R
I
G
G
E
R
V
O
L
T
A
G
E
TC - Case Temperature - °C
-50 -25 0 25 50 75 100 125
V
GT
- Gate Trigger Voltage - V
0·2
0·4
0·6
0·8
0
1TC20AB
CASE TEMPERATURE
vs
VAA = 6 V
RL = 100 ΩΩ
RGK = 1 kΩΩ
tp(g) ≥≥ 20 µs
GATE FORWARD VOLTAGE
I
G
F
- Gate Forward Current - mA
0·1 1 10 100 1000
VGF - Gate Forward Voltage - V
0·1
1
10 TC20AC
GATE FORWARD CURRENT
vs
IA = 0
TC = 25 °C
tp = 300 µs
Duty Cycle ≤≤ 2 %
H
O
L
D
I
N
G
C
U
R
R
E
N
T
TC - Case Temperature - °C
-50 -25 0 25 50 75 100 125
IH - Holding Current - mA
1
10 TC20AD
CASE TEMPERATURE
vs
VAA = 6 V
RGK = 1 kΩΩ
Initiating IT = 10 mA
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
6
APRIL 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 11. Figure 12.
Figure 13.
P
E
A
K
O
N
-
S
T
A
T
E
V
O
L
T
A
G
E
ITM - Peak On-State Current - A
0·1 1 10
VTM - Peak On-State Voltage - V
0.0
0.5
1.0
1.5
2.0
2.5TC20AE
vs
PEAK ON-STATE CURRENT
TC = 25 °C
tp = 300 µs
Duty Cycle ≤≤ 2 %
G
A
T
E
-
C
O
N
T
R
O
L
L
E
D
T
U
R
N
-
O
N
T
I
M
E
IG - Gate Current - mA
0·1 1 10
tgt - Gate-Controlled Turn-On Time - µs
0.0
2.0
4.0
6.0
8.0
10.0TC20AF
vs
GATE CURRENT
VAA = 30 V
RL = 6 ΩΩ
TC = 25 °C
See Test Circuit and Waveforms
C
I
R
C
U
I
T
-
C
O
M
M
U
T
A
T
E
D
T
U
R
N
-
O
F
F
T
I
M
E
TC - Case Temperature - °C
20 40 60 80 100 120
tq - Circuit-Commutated Turn-Off Time - µs
0
2
4
6
8
10
12
14
16 TC20AG
CASE TEMPERATURE
vs
VAA = 30 V
RL = 6 ΩΩ
IRM ≈≈ 8 A
See Test Circuit and Waveforms
7
APRIL 1971 - REVISED MARCH 1997
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
123
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
TIC106 SERIES
SILICON CONTROLLED RECTIFIERS
8
APRIL 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited