Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................ 1800A
●VCES ....................................................... 1700V
●Insulated Type
●1-element in a Pack
●AISiC Baseplate
●Trench Gate IGBT : CSTBT™
●Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM1800HC-34N
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
C
E
G
4(C)
3(E)
2(C)
1(E)
CIRCUIT DIAGRAM
LABEL
42
31
GE
C
20
±0.1
140
±0.5
124
±0.25
18
±0.2
4 - M8 NUTS
6 - φ 7 MOUNTING HOLES
3 - M4 NUTS
130
±0.5
57
±0.25
57
±0.25
40
±0.2
61.5
±0.3
29.5
±0.5
10.35
±0.2
10.65
±0.2
48.8
±0.2
5
±0.2
5.2
±0.2
15
±0.2
40
±0.2
38
+1
–0
28
+1
–0
screwing depth
min. 16.5
screwing depth
min. 7.7
http://store.iiic.cc/
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Collector-emitter voltage
Gate-emitter voltage
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 75°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1200V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
Collector current
Emitter current
1700
±20
1800
3600
1800
3600
10000
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
°C
V
µs
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Top
Tstg
Viso
tpsc
VCE = VCES, VGE = 0V, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1800A, VGE = 15V, Tj = 25°C (Note 4)
IC = 1800A, VGE = 15V, Tj = 125°C (Note 4)
VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25°C
IE = 1800A, VGE = 0V, Tj = 25°C (Note 4)
IE = 1800A, VGE = 0V, Tj = 125°C (Note 4)
VCC = 850V, IC = 1800A, VGE = ±15V
RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1800A, VGE = ±15V
RG(off) = 2.2Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1800A, VGE = ±15V
RG(on) = 0.9Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
V
Min Typ Max
6
0.5
2.80
—
—
—
—
—
3.30
—
—
—
—
—
—
—
—
—
—
—
mA
µA
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
A
µC
mJ/pulse
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
Qg
VEC
(Note 2)
td(on)
tr
Eon
td(off)
tf
Eoff
trr
(Note 2)
Irr
(Note 2)
Qrr
(Note 2)
Erec
(Note 2)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
6.0
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
ELECTRICAL CHARACTERISTICS
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
IC = 180mA, VCE = 10V, Tj = 25°C
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
—
—
2.15
2.40
264
14.4
4.2
10.2
2.60
2.30
1.00
0.40
550
1.20
0.30
560
1.00
720
420
280
7.0 8.0
http://store.iiic.cc/
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
12.5
28.0
—
—
—
11.0
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
M
—
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
TC = 25°C
N·m
kg
—
mm
mm
nH
mΩ
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Min Typ Max
20.0
6.0
3.0
—
—
—
—
—
—
—
—
—
0.8
—
—
—
16
0.14
7.0
3.0
1.0
—
600
19.5
32.0
—
—
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
http://store.iiic.cc/
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
3000
3600
2400
1800
1200
600
03421056
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
3000
3600
2400
1800
1200
600
0684201012
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
5
4
3
2
1
01800 240012006000 3000 3600
5
4
3
2
1
01800 240012006000 3000 3600
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
T
j
= 125°C
V
GE
= 15V
V
CE
= 20V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
GE
= 20V
http://store.iiic.cc/
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (Ω)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
04620810
12 14
3000
2500
2000
1500
1000
500
0684201012
2000
1600
1200
800
400
01800 240012006000 3000 3600
102
103
101
100
100
10-1 23 57 101102
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
Cres
Coes
Cies
VGE = 0V, Tj = 25°C
f = 100kHz
VCC = 850V, IC = 1800A
Tj = 25°C
VCC = 850V, VGE = ±15V
RG(on) = 0.9Ω, RG(off) = 2.2Ω
Tj = 125°C, Inductive load
VCC = 850V, IC = 1800A,
VGE = ±15V
Tj = 125°C, Inductive load
Eon
Eoff
Erec
Erec
Eon
Eoff
http://store.iiic.cc/
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1800HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
0
10
1
10
-1
10
-2
2
3
5
7
2
3
5
7
2
3
5
7
10
3
10
223 57
10
4
23 57
Module
Chip
10-2 10-1
10-3
23 57 23 57
100
23 57
101
23 57
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
1.2
1.0
0.8
0.6
0.4
0
TIME (s)
0.2
5000
4000
3000
2000
0500 10000 1500 2000
1000
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY CHARGE (µC)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
600
500
400
300
200
100
01800 240012006000 3000 3600
NORMALIZED TRANSIENT THERMAL IMPEDANCE
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 0.9Ω, R
G(off)
=
2.2Ω
T
j
= 125°C, Inductive load
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= 0.9Ω
T
j
= 125°C, Inductive load
t
d(off)
Q
rr
t
d(on)
t
r
t
f
Single Pulse, T
C
= 25°C
R
th(j–c)Q
= 12.5K/kW
R
th(j–c)R
= 28K/kW
V
CC
≤ 1200V, V
GE
= +/-15V
T
j
= 125°C, R
G(off)
≥ 2.2Ω
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