Document Number: 89317 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 10-Nov-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Surface Mount Trench MOS Barrier Schottky Rectifier
VSSB420S
Vishay General Semiconductor
New Product
FEATURES
Low profile package
Ideal for automated placement
Trench MOS Schottky technology
Low power losses, high efficiency
Low forward voltage drop
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency converters, freewheeling diodes,
DC/DC converters and polarity protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
Notes
(1) Units mounted on PCB with 20 mm x 20 mm pad areas
(2) Free air, mounted on recommended PCB 1 oz. pad area
PRIMARY CHARACTERISTICS
IF(AV) 4.0 A
VRRM 200 V
IFSM 40 A
VF at IF = 4.0 A 0.71 V
TJ max. 150 °C
DO-214AA (SMB)
TMBS
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSB420S UNIT
Device marking code V4D
Maximum repetitive peak reverse voltage VRRM 200 V
Maximum DC forward current
IF (1) 4.0
A
IF (2) 1.8
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load IFSM 40 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89317
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 10-Nov-10
VSSB420S
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Notes
(1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance RJA - junction to ambient
(2) Units mounted on PCB with 20 mm x 20 mm copper pad areas; thermal resistance RJM - junction to mount
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage IF = 4.0 A
TA = 25 °C
VF (1) 1.44 1.90
V
TA = 125 °C 0.71 0.80
Reverse current per diode
VR = 180 V
TA = 25 °C
IR (2)
3-μA
TA = 125 °C 0.7 - mA
VR = 200 V
TA = 25 °C 4 150 μA
TA = 125 °C 1.1 10 mA
Typical junction capacitance 4.0 V, 1 MHz CJ120 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSB420S UNIT
Typical thermal resistance
RJA (1) 120
°C/W
RJM (2) 15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSB420S-M3/52T 0.096 52T 750 7" diameter plastic tape and reel
VSSB420S-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
025 50 75 100 125
5.0
150
TM - Mount Temperature (°C)
Average Forward Rectified Current (A)
2.5
2.0
1.5
0.5
0
1.0
TM Measured at Terminal
3.0
4.0
3.5
4.5
04.4
0
4
Average Forward Current (A)
Average Power Loss (W)
1.5
1.0
0.5
4.0
3.6
3.2
2.8
2.4
2.0
0.4
D = tp/T tp
T
D = 0.1
D = 0.5 D = 0.8
D = 1.0
3.5
3.0
2.5
2.0
D = 0.3
D = 0.2
1.6
1.2
0.8
Document Number: 89317 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 10-Nov-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VSSB420S
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1
100
0
0.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
10
0.2
0.4 0.6 0.8
1.0
1.2
1.61.4
10 20 40 60
0.00001
0.0001
0.001
0.01
0.1
10
80100
Percent of Rated Peak Reverse Voltage (%)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
30 50 70 90
Instantaneous Reverse Current (mA)
1
100
10
10
100
1000
0.1 1
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
1
100
1000
0.01 1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
0.1
Junction to Ambient
0.012 (0.305)
0.006 (0.152)
0.008(0.2)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
DO-214AA (SMB)
0 (0)
Cathode Band
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
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Revision: 12-Mar-12 1Document Number: 91000
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