
MS1336
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
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RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
DESCRIPTION:DESCRIPTION:
The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor
designed primarily for Class C, VHF communication applications.
The MS1337 utilizes an emitter ballasted die geometry to
withstand severe load mismatch conditions.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
VCBO Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 18 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 8.0 A
70
TJ Junction Temperature +200 °°C
TSTG Storage Temperature -65 to +150 °°C
Thermal DataThermal Data
RTH(J-C)
Junction-case Thermal Resistance
1.2 °°C/W
FeaturesFeatures
• 175 MHz
• 12.5 VOLTS
• POUT = 30W MINIMUM
• GP = 10 dB GAIN
• COMMON EMITTER CONFIGURATION