OBSOLETE
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
2
JUNE 1973 - REVISED NOVEMBER 2012
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 30 mA
(see Note 5)
IB = 0
BD243
BD243A
BD243B
BD243C
45
60
80
100
V
ICES
Collector-emitter
cut-off current
VCE = 55 V
VCE = 70 V
VCE = 90 V
VCE =115 V
VBE =0
VBE =0
VBE =0
VBE =0
BD243
BD243A
BD243B
BD243C
0.4
0.4
0.4
0.4
mA
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB=0
IB=0
BD243/243A
BD243B/243C
0.7
0.7 mA
IEBO
Emitter cut-off
current VEB = 5 V IC=0 1 mA
hFE
Forward current
transfer ratio
VCE = 4 V
VCE = 4 V
IC= 0.3 A
IC= 3A (see Notes 5 and 6) 30
15
VCE(sat)
Collector-emitter
saturation voltage IB = 1 A IC= 6 A (see Notes 5 and 6) 1.5 V
VBE
Base-emitter
voltage VCE = 4 V IC= 6 A (see Notes 5 and 6) 2 V
hfe
Small signal forward
current transfer ratio VCE = 10 V IC= 0.5 A f = 1 kHz 20
|hfe|Small signal forward
current transfer ratio VCE = 10 V IC= 0.5 A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.92 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t i m e I C = 1 A
VBE(off) = -3.7 V
IB(on) = 0.1 A
RL = 20 Ω
IB(off) = -0.1 A
tp = 20 µs, dc ≤ 2%
0.3 µs
toff Turn-off time 1µs
OBSOLETE
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
3
JUNE 1973 - REVISED NOVEMBER 2012
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
hFE - DC Current Gain
1·0
10
100
1000 TCS633AH
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IB - Base Current - A
0·001 0·01 0·1 1·0 10
VCE(sat) - Collector-Emitter Saturation Voltage - V
0·01
0·1
1·0
10 TCS633AE
IC = 300 mA
IC = 1 A
IC = 3 A
IC = 6 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·1 1·0 10
VBE - Base-Emitter Voltage - V
0·6
0·7
0·8
0·9
1·0
1·1
1·2 TCS633AF
VCE = 4 V
TC = 25°C
OBSOLETE
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
4
JUNE 1973 - REVISED NOVEMBER 2012
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0·1
1·0
10
100 SAS633AD
BD243
BD243A
BD243B
BD243C
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS633AB
OBSOLETE
