Z0405MF1AA2 - STMicroelectronics

1/6

Z04 Series

STANDARD 4A TRIACS

July 2003 - Ed: 5

MAIN FEATU RE S :

DESCRIPTION

The Z04 series is sui table for general purpose AC

switching applications. They can be found in

applications such as touch light dimmers, fan

controllers, HID lamp ignitors,...

Different gate current sensitivities are available,

allowing optimized performances when controlled

directly from microcontrollers.

Symbol Value Unit

IT(RMS) 4A

DRM/VRRM 600 to 800 V

IGT ( Q1)3 to 25 mA

ABSOLUTE MAXIM UM RAT INGS

Symbol Parameter Value Unit

IT(RMS) RMS on-state current (full sine wave) TI = 30°C 4 A

Tamb = 25°C 1

ITSM Non repetitive surge peak on-state

current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 20 A

F = 60 Hz t = 16.7 ms 21

I²tI

t Value for fusing tp = 10 ms 2.2 A²s

dI/dt Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 20 A/µs

IGM Peak gate current tp = 20 µs Tj = 125°C 1.2 A

PG(AV) Average gate power dissipation Tj = 125°C 0.2 W

Tstg

TjStorage junction temperature range

Operatin g junction temp erature range - 40 to + 150

- 40 to + 125 °C

A1 G

TO202-3

(Z04xxF)

Z04 Ser ies

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ELECTRICAL CHARACTE RISTICS (Tj = 25°C, unless othe rwise specified )

STAT IC CHARACTERIST ICS

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

THERMA L RESISTANCES

Symbol Test Conditions Quadrant Z04xx Unit

02 05 09 10

IGT (1) VD = 12 V RL = 30 ΩALL MAX. 3 5 10 25 mA

VGT ALL MAX. 1.3 V

VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C ALL MIN. 0.2 V

IH (2) IT = 50 mA MAX. 3 5 10 25 mA

ILIG = 1.2 IGT I - III - IV MAX. 6 10 15 25 mA

II 12 15 25 50

dV/dt (2) VD = 67 %VDRM gate open Tj = 110°C MIN. 10 20 100 200 V/µs

(dV/dt)c (2) (dI/dt)c = 1.8 A/ms Tj = 110°C MIN. 0.5 1 2 5 V/µs

Symbol Test Conditions Value Unit

VTM (2) ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. 2.0 V

Vto (2) Threshold voltage Tj = 125°C MAX. 0.95 V

Rd (2) Dynamic resistance Tj = 125°C MAX. 180 mΩ

IDRM

IRRM

VDRM = VRRM Tj = 25°C MAX. 5µA

Tj = 125°C 0.5 mA

Symbol Parameter Value Unit

Rth(j-l) Junction to lead (AC) 15 °C/W

Rth(j-a) Junction to ambient 100 °C/W

Z04 Series

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PRODUCT SELECTOR

ORDERING INFO RMATION

OTHER INFORMATION

Note: xx = sensitivity, y = voltage

Part Number Voltage Sensitivity Type Package

600 V 700 V 800 V

Z0402MF X 3 mA Standard TO202-3

Z0402SF X 3 mA Standard TO202-3

Z0402NF X 3 mA Standard TO202-3

Z0405MF X 5 mA Standard TO202-3

Z0405SF X 5 mA Standard TO202-3

Z0405NF X 5 mA Standard TO202-3

Z0409MF X 10 mA Sta ndar d TO202-3

Z0409SF X 10 mA Sta ndar d TO202-3

Z0409NF X 10 mA Standard TO202-3

Z0410MF X 25 mA Sta ndar d TO202-3

Z0410SF X 25 mA Sta ndar d TO202-3

Z0410NF X 25 mA Standard TO202-3

Part Number Marking Weight Base

quantity Packing

mode

Z04xxyF 0AA2 Z04xxyF 0.8 g 50 Tube

Z04xxyF 1AA2 Z04xxyF 0.8 g 250 Bulk

Z 04 02 M F 0AA2

TRIAC

SERIES

CURRENT: 4A

SENSITIVITY:

02: 3mA

05: 5mA

09: 10mA

10: 25mA

VOLTAGE:

M: 600V

S: 700V

N: 800V

PACKAGE:

F:TO202-3

PACKING MODE:

0AA2:Tube

1AA2: Bulk

Blank

Z04 Ser ies

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Fig. 1: Maximum power dissipation versus RMS

on-state current (fu ll cycle). Fig. 2: RMS on-state current versus ambient

temperatu re (full cycl e).

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration. Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical val ues).

Fig. 5: Surge peak on-state current versus

num ber of cycle s. Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10ms, and correspondi ng value of I²t.

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

IT(RMS)(A)

P(W)

0 25 50 75 100 125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5 IT(RMS)(A)

Rth(j-a)=Rth(j-l)

Rth(j-a)=100°C/W

Tamb(°C)

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

1E-3

1E-2

1E-1

1E+0

tp(s)

K=[Zth(j-a)/Rth(j-a)]

-40 -20 0 20 40 60 80 100 120 140

0.0

0.5

1.0

1.5

2.0

2.5

Tj(°C)

IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]

IGT

IH & IL

1 10 100 1000

Number of cycles

ITSM(A)

Non repetitive

Tj initial=25°C

Repetitive

Tamb=25°C

One cycle

t=20ms

0.01 0.10 1.00 10.00

100

500

tp (ms)

ITSM (A), I²t (A²s)

Tj initial=25°C

ITSM

I²t

dI/dt limitation:

20A/µs

Z04 Series

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Fig. 7: On-state characteristics (maximum

values). Fig. 8: Relative variation of critical rate of

dec re ase of main current versus (dV/dt)c (typical

values).

Fig. 9: Relative variation of critical rate of

decrease of main current versus junction

temperature.

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.1

1.0

10.0

20.0

VTM(V)

ITM(A)

Tj=25°C

Tj max.

Vto= 0.95V

Rd= 180 mW

Tj=Tj max.

0.1 1.0 10.0 100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Z0402

Z0405

Z0409

Z0410

0 25 50 75 100 125

6(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

Tj (°C)

Z04 Ser ies

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PACKAGE MECHANICAL DATA

TO 202-3 (Plastic)

REF.

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 10.1 0.398

C 7.3 0.287

D 10.5 0.413

F 1.5 0.059

H 0.51 0.020

J 1.5 0.059

M 4.5 0.177

N 5.3 0.209

N1 2.54 0.100

O 1.4 0.055

P 0.7 0.028