MBR2030CT thru 2060 CT
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERIST ICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Me tal of silicon rectifier,ma jority carrier conducton
Guard ring for tr an s ient protec tio n
Low power loss, hi gh efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters ,free
wh elling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
MBR
2030 CT
30
21
30
Maximum Av erage Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-w ave
superim posed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +175 C
Typical Thermal Resistance (Note 3)
R
0JC
2.0
C/W
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage (Note 1) V
Voltage Rate of Change (Rated VR)
T
J
=125 C
T
J
=25 C
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @ T
J
=125 C
dv/dt -
0.57
0.84
0.72
I
R
@T
J
=100 C
Maximum DC Re verse Current
at Rated DC Blocking Voltage
@T
J
=25 C 0.1
15
mA
T
C
=125 C
V/us
MBR
2035CT
35
24.5
35
MBR
2040CT
40
28
40
MBR
2045CT
45
31.5
45
MBR
2050CT
50
35
50
MBR
2060CT
60
42
60
10000 0.80
0.70
0.95
0.85
TO-220AB
All Dimensions in millimet er
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B14.22 15.88
10.67 9.6 5
2.54 3.43
6.86 5.8 4
8.2 6 9.28
- 6.35
12.70 14.73
0.5 1 2.79
N
M
L
K
J
I 1.14
2.2 9
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.0 3
PIN 1
PIN 3 PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
132
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOL TAGE
- 30
to
60
Volts
FORWARD CURRENT
- 20
Amperes
Typical Junction Capacitance
per element (Note 2)
C
J
300 400
NOTES : 1. 300us Pulse Width, 2% Duty Cyc le.
2. Measured at 1.0MHz and applied revers e voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
pF
T
J
=25 C
SEMICONDUCTOR
LITE-ON
REV. 3, 1 3-Sep-2001, K THC 0 8
RATING AND CHA RACTERISTIC CURVES
M BR2 030CT thru MBR2 060CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCL ES AT 60 Hz
PEAK FORWARD SURG E CURRENT,
AMPERES
1 5 10 50 100220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25 75 100 125 150
5
050
20
175
8.3ms Single H alf-Sine-Wave
(JEDEC METHOD)
15
0
10
RESISTIVE OR
INDUCTI V E LOA D
CASE TEMPERA TURE , C
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHAR ACT ERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.01
1.0
10
1000
100
60 80 100
TJ= 100 C
0.1
TJ= 25 C
TJ= 75 C
IN STANTANEOUS F O RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1 1.0
0.9
IN STANTANEOUS F O RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1 PULSE WIDTH 300us
2% Duty cycle
TJ= 25 C
MBR20 30C T ~ M B R2045CT
MBR2050CT ~ MBR2060CT
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
RE VERSE V OLTAGE , V OLTS
10
1100
10000
1000
100 0.1 4
MBR2030CT ~ MBR2045CT
MBR20 50C T ~ M B R2060CT
TJ= 25 C, f= 1MHz
REV. 3, 13-Sep-2001, KTHC08