©2000 Fairchild Semiconductor International Rev. A, February 2000
BD243/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD24 3
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage: BD24 3
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP *Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Sustai ni ng Voltage
: BD2 43
: BD243A
: BD243B
: BD243C
IC=30mA , IB=0
45
60
80
100
V
V
V
V
ICEO Collect or Cut- of f Current : BD243/243A
: BD243B/243C VCE = 30 V, IB = 0
VCE = 60 V, IB = 0 0.7
0.7 mA
mA
ICES Collector Cut-off Current : BD243
: BD243A
: BD243B
: BD243C
VCE = 45 V, VBE = 0
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 10 0V, VBE = 0
0.4
0.4
0.4
0.4
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, I C = 0 1 mA
hFE *DC Current Gain VCE = 4V, IC = 0.3A
VCE = 4V, IC = 3A 30
15
VCE(sat) *Collector-Emit ter Sat urat ion Voltage IC = 6A, IB = 1A 1.5 V
VBE(on) *Base-Emitter O N Voltage VCE = 4V, IC = 6A 2 V
BD243/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD244, BD244A, BD244B and BD244C respectively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BD243/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.01 0.1 1 10
10
100
1000
VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IC = 10.1 IB
VBE(sat)(V), SATURATION V OLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
IC = 10.1 IB
VBE(sat)(V), SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
0.1
1
10
100
BD243
BD243A
BD243B
BD243C
DC
10ms
1ms
10µs
100µs
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EM ITTER VOL TAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
T[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD243/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
