UNISONIC TECHNOLOGIES CO., LTD
2SB1202 PNP PLANAR TRANSISTOR
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Copyright © 2010 Unisonic Technologies Co., Ltd QW-R217-005.E
HIGH CURRENT SWITCHING
APPLICATION
DESCRIPTION
The UTC 2SB1202 applies to voltage regulators, relay drivers,
lamp drivers, and electrical equipment.
FEATURES
* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching speed
ORDERING INFORMATION
Order Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3 Packing
2SB1202-x-T6C-K 2SB1202L-x-T6C-K 2SB1202G-x-T6C-K TO-126C E C B Bulk
2SB1202-x-TM3-T 2SB1202L-x-TM3-T 2SB1202G-x-TM3-T TO-251 B C E Tube
2SB1202-x-TN3-R 2SB1202L-x-TN3-R 2SB1202G-x-TN3-R TO-252 B C E Tape Reel
2SB1202-x-TN3-T 2SB1202L-x-TN3-T 2SB1202G-x-TN3-T TO-252 B C E Tube
2SB1202 PNP PLANAR TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -6 V
TO-126C 20 W
TO-251 28 W
Collector Power Dissipation Tc=25°C TO-252 PD 28 W
DC IC -3 A
Collector Current PULSE ICP -6 A
Junction Temperature TJ 150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
TO-126C 6.25
TO-251 4.53
Junction to Case TO-252
θJC 4.53 °C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
C-B Breakdown Voltage BVCBO I
C=-10μA, IE=0 -60 V
C-E Breakdown Voltage BVCEO I
C=-1mA, RBE=∞ -50 V
E-B Breakdown Voltage BVEBO I
E=-10μA, IC=0 -6 V
Collector Cutoff Current ICBO V
CB=-40V,IE=0 -1 μA
Emitter Cutoff Current IEBO V
EB=-4V,IC=0 -1 μA
C-E Saturation Voltage VCE(SAT) I
C=-2A, IB=-100mA -0.35 -0.7 V
B-E Saturation Voltage VBE(SAT) I
C=-2A, IB=-100mA -0.94 -1.2 V
hFE1 V
CE=-2V, Ic=-100mA 100 560
DC Current Gain hFE2 V
CE=-2V, Ic=-3A 35
Gain-Bandwidth Product fT V
CE=-10V, IC=-50mA 150 MHz
Output Capacitance Cob VCB=-10V, f=1MHz 39 pF
Turn-on Time tON See test circuit 70 ns
Storage Time tSTG See test circuit 450 ns
Fall Time tF See test circuit 35 ns
CLASSIFICATION OF hFE1
RANK R S T U
RANGE 100-200 140-280 200-400 280-560
2SB1202 PNP PLANAR TRANSISTOR
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TEST CIRCUIT
2SB1202 PNP PLANAR TRANSISTOR
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TYPICAL CHARACTERISTICS
2SB1202 PNP PLANAR TRANSISTOR
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TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.
