FEATURES
◇ Metal-Semiconductor junction with guard ring
◇ Epitaxial construction
◇ Low forward voltage drop,low switching losses
◇ High surge capability
MECHANICAL DATA
◇ Case:JEDEC DO--41,molded plastic
◇ Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
◇ Polarity: Color band denotes cathode
◇ Weight: 0.012 ounces,0.34 grams
◇ Mounting position: Any
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB
130 SB
140 SB
150 SB
160 SB
170 SB
180 SB
190 SB
1A0 UNITS
Maximum recurrent peak reverse voltage VRRM 30 40 50 60 70 80 90 100 V
Maximum RMS voltage VRMS 21 28 35 42 49 56 63 70 V
Maximum DC blocking voltage VDC 30 40 50 60 70 80 90 100 V
Maximum average forward rectified current
9.5mm lead length, (see fig.1)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @TJ=125℃
Maximum reverse current @TA=25℃
at rated DC blocking voltage @TA=100℃
Typical junction capacitance (Note1) CJpF
Typical thermal resistance (Note2) RθJA ℃/W
Operating junction temperature range TJ
℃
Storage temperature range TSTG
℃
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
BLGALAXY ELECTRICAL SB120 - - - SB1A0
50 - 55 --- + 150
- 55 --- + 150 www.galaxycn.com
0.85
0.5 5.0
110 80
A
◇ For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
IF(AV)
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 1.0 A
DO - 41
◇ The plastic material carries U/L recognition 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
IFSM A
Maximum instantaneous forward voltage
@ 1.0A VF
mA
IR
V0.5 0.7
10.0
- 55 --- + 125
SB
120
20
14
20
1.0
40.0
Document Number 0266004 1.
BLGALAXY ELECTRICAL