UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R201-038,A
SWITCHING AND AMPLIFIER
APPLICATIONS
FEATURES
*Suitable for AF-Driver stages and low power output
stages
*Complement to BC337/338
TO-92
1
1: COLLECTOR 2: BASE 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Collector-emitter voltage
: BC327
: BC328
VCES
-50
-30
V
V
Collector-emitter voltage
: BC327
: BC328
VCEO
-45
-25
V
V
Emitter-base voltage VEBO -5 V
Collector current (DC) Ic -800 mA
Collector dissipation Pc 625 mW
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-emitter breakdown voltage
: BC327
: BC328
BVCEO Ic=-10mA, IB=0
-45
-25
V
V
Collector-emitter breakdown voltage
: BC327
: BC328
BVCES Ic=-0.1mA, VBE=0
-50
-30
V
V
Emitter-base breakdown voltage BVEBO IE=-10mA, Ic=0 -5 V
Collector Cut-off Current
: BC327
: BC328
ICES
VCE=-45V, IB=0
VCE=-25V, IB=0
-2
-2
-100
-100
nA
nA
DC current gain hFE1
hFE2
VCE=-1V, Ic=-100mA
VCE=-1V, Ic=-300mA
100
40
630
Collector-emitter saturation voltage VCE(sat) Ic=-500mA, IB=-50mA -0.7 V