1998©
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2402 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1571
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 30 V
Emitter to base voltage VEBO 6.0 V
Collector current (DC) IC(DC) 5.0 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms
duty cycle ≤ 50 %
8.0 A
Base current (DC) IB(DC) 0.2 A
Base current (pulse) IB(pulse) PW ≤ 10 ms
duty cycle ≤ 50 %
0.4 A
Total power dissipation PT16 cm2 × 0.7 mm ceramic board mounted 2.0 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
