NDT452AP June 1996 FAIRCHILD ee SEMICONDUCTOR Im NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field B -5A, -30V. Region) = 0.065Q @ V,, =-10V effect transistors are produced using Fairchild's proprietary, Rogion) = 0-12 @ Veg = -4.5V. high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance "High density cell design for extremely low Rogen and provide superior switching performance. These devices . , a, . are particularly suited for low voltage applications such as "High power and current handling capability in a widely used notebook computer power management and DC motor surface mount package. control. SOT-223 G SOT-223* & |e _ s| (J232) _ Absolute Maximum Ratings _T, = 25C unless otherwise noted Symbol | Parameter NDT452AP Units Voss Drain-Source Voltage -30 Voss Gate-Source Voltage +20 5 Drain Current - Continuous (Note ta) 5 - Pulsed -15 P, Maximum Power Dissipation (Note 1a) 3 Ww (Note 1b) 13 (Note 10) 141 T,,Tsr, | Operating and Storage Temperature Range -65 to 150 C THERMAL CHARACTERISTICS Ry Thermal Resistance, Junction-to-Ambient (Note 1a} 42 C/W Raic Thermal Resistance, Junction-to-Case (Note 1) 12 CW * Order option J23Z for cropped center drain lead. 4-320 NDT4524P Rev. BtElectrical Characteristics (1, = 25C unless otherwise noted} Symbol _| Parameter Conditions Min | Typ | Max | Units OFF CHARACTERISTICS BV oc5 Drain-Source Breakdown Voltage Vos = 0 V, I= -250 WA -30 Vv logs Zero Gate Voltage Drain Current Vog = -24 V, Veg= OV -1 pA T,=55C -10 pA lesse Gate - Body Leakage, Forward Vag = 20 V, Vg = OV 100 | nA lessn Gate - Body Leakage, Reverse Veg = 720 V, Vig= 0 V -100 nA ON CHARACTERISTICS (note 2) Ves Gate Threshold Voltage Vag = Veg: by = -250 pA 1 | 16 | -28 Vv it,=126 | 07 | 12 | 22 Rosiow Static Drain-Source On-Resistance Veg = 10 V, 1, =-5.0A 0.052 | 0.065 Q |T,= 125C 0.075 | 0.13 Voge 45V, |= 4.3 A 0.085 | 0.1 leer On-State Drain Current Vas = 710 V, Vag =-5 V 15 A Vog = 4:5 V, Vag =-5 V 5 Oks Forward Transconductance Vog= -10V,1,= -5.0A 7 s DYNAMIC CHARACTERISTICS om Input Capacitance Vog = 715 V, Vgg= OV, 690 pF Cu, Output Capacitance f= 1.0 MHz 430 pF C., Reverse Transfer Capacitance 160 pF SWITCHING CHARACTERISTICS (note2) toxon) Tum - On Delay Time Vop = 10 V, I, = -1A, 9 20 ns t, Tum - On Rise Time Veen = 10 Vi Roc = 6 2 20 30 ns toon Tum - Off Delay Time 40 50 ns t Tum - Off Fall Time 19 40 ns Q, Total Gate Charge Vog = -10V, 22 30 nc Q,. Gate-Source Charge b= 5.0A, Vos=-10V 32 nc Qu Gate-Drain Charge 5.2 nc 4-321 NDT452AP Rev. B1 dVcSvLaNnNDT452AP Electrical Characteristics (1, = 25C unless otherwise noted) Symbol | Parameter Conditions | Min | Typ | Max | Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 25 A Vop Drain-Source Diode Forward Voltage Veg = OV, I=-25A (note2) 085 | -12 v t Reverse Recovery Time Veg =9V, |, =-2.5 A, di_/dt = 100 A/us 100 ns Notes: 1. R,, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,,,,is guaranteed by design while R,,., is determined by the user's board design TT, TrT, Ppl) = * = *. = 1h) x Rosoner, Typical R,,, using the board iayouts shawn below on 4.5"x5" FA-4 PCB in a still air environment: a. 42C/W when mounted on a 1 in pad of 20z copper. b. 95C/W when mounted on a 0.066 in pad of 20z copper . 110C/W when mounted on a 0.0123 in pad of 20z copper. 1a tb Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0% 1c 4-322 NDT4524P Rev. B1Typical Electrical Characteristics Ip ORAIN-SOURCE CURRENT (A) 9 a . Vpg - DRAIN-SOURCE VOLTAGE (V 2 3 Figure 1. On-Region Characteristics. 1p = -5.0A V gg = -10V R pgiony HORMALIZED DRAIN-SOUACE ON-RESISTANCE O68 | 50 725 0 T, JUNCTION TEMPERATURE (C) 25 50 75 100 125 Figure 3. On-Resistance Variation with 160 Temperature. -20 | Ty = -55C Vpg = -10V J " s | 126C _ 715 = 25C fa Zz do Q -10 Go Zz <= a a 6 5 Oo A -2 +3 4 5 Vas GATE TO SOURCE VOLTAGE [V) Figure 5. Transfer Characteristics. R ps(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0 4 8 12 -16 -20 Ip . DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. Ves = -10V w 9 a & N B15 Ty = 126C zo w | | Za gz zo | zs 25C eS a 8 z & 55C o 0.5 0 4 8 12 -16 720 Ih , DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Drain Current and Temperature. % Vos = Ves z =- ez Ip = -250nA $ Q 3 a9 <i Zu Se ze ew >2 2 9 Ww & oO .50 -25 0 25 50 75 100 125 ~=180 T, , JUNCTION TEMPERATURE (C) Figure 6. Gate Threshold Variation with Temperature. 4-323 NDT4524P Rev. B1 dV2SvLanNDT452AP Typical Electrical Characteristics 1.08 p = -250HA 1.06 1.04 BV pgs . NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE 3 8 -50 -25 0 25 50 75 100 125 T, , JUNCTION TEMPERATURE (C) Figure 7. Breakdown Voltage Variation with Temperature. 2000 1000 500 300 CAPACITANCE (pF} f= 1 MHz Veg = OV 200 a4 0.2 05 1 2 5 10 -Vpg . DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. 150 Figure 11. Switching Test Circuit. 20 < = z w Cc gc 2 oO Zz g of a wi wy oc ww = 0.01 rc D 0.001 0 04 0.8 1.2 16 2 Ven . BODY DIODE FORWARD VOLTAGE (V) Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. Ip = -5.04 =- 0 Vyg= 5 AVA soy GATE-SOURCE VOLTAGE (V) - | f i 8 > _ 9 5 10 15 20 38 Qg . GATE CHARGE (nC) Figure 10. Gate Charge Characteristics. ton mt tots t aon) it, Lacots) ty 90% Vout . 10% 490% Vin 50% - 10% | ~t PULSE WIDTH INVERTED Figure 12. Switching Waveforms. 4-324 NDT452AP Rev. BtTypical Thermal Characteristics dVcSvLaNn Qpg TRANSCONDUCTANCE (SIEMENS) Still Air STEADY-STATE POWER DISSIPATION {W) 0 4 -8 12 -16 -20 Q 0.2 04 OB 08 1 lp DRAIN CURRENT (A) 20z COPPER MOUNTING PAD AREA (in } Figure 13. Transconductance Variation with Drain Figure 14. SOT-223 Maximum Steady- tate Current and Temperature. Power Dissipation versus Copper Mounting Pad Area. 6 50 z 20 E la 10 Zs & _ z 5 ac = Z 4 Lo & 1 p a o 05 EB f- F E g Vag = 710V 2 3 * 4.5x5" FA-4 Board oq ot SINGLE PULSE 4 T,. = 28C * 908 Raa = See Note to Still air T, = 25C a Vgg = -10V ~ 2 1 0.01 = Qo 0.2 0.4 06 08 1 Ot 0.2 0.8 1 2 5 40 30 50 20z COPPER MOUNTING PAD AREA (in 2) + Vpg . ORAIN-SOURCE CURRENT (V) Figure 15. Maximum Steady-State Drain Figure 16. Maximum Safe Operating Area. Current versus Copper Mounting Pad Area. 05 WW 2 02 Se im R yiatt)= tt) Rosa oo of Rua = See Note tc tw . a 0.05 r | = ag | | az NG 0.02 _ < -E soe _ Zz, 0.01 : 8% : & 0.005 + pe 2 Ty-Ta =P Rat) ~ 0.002 Duty Cycle, D = t, /ty 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 ty, TIME (sec) Figure 17. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. 4-325 NDT452AP Rev. B1