1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2. Pinning information
2N7002E
N-channel TrenchMOS FET
Rev. 03 — 28 April 2006 Product data sheet
Logic level threshold compatible Very fast switching
Surface-mounted package TrenchMOS technology
Logic level translator High-speed line driver
VDS 60 V ID385 mA
RDSon 3Ptot 0.83 W
Table 1: Pinning
Pin Description Simplified outline Symbol
1 gate (G)
SOT23
2 source (S)
3 drain (D)
12
3
S
D
G
mbb076
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 2 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
3. Ordering information
4. Limiting values
Table 2: Ordering information
Type number Package
Name Description Version
2N7002E TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °CTj150 °C - 60 V
VDGR drain-gate voltage (DC) 25 °CTj150 °C; RGS =20k-60V
VGS gate-source voltage - ±30 V
VGSM peak gate-source voltage tp50 µs; pulsed; duty cycle = 25 % - ±40 V
IDdrain current Tsp =25°C; VGS = 10 V; see Figure 2 and 3- 385 mA
Tsp = 100 °C; VGS = 10 V; see Figure 2 - 245 mA
IDM peak drain current Tsp =25°C; pulsed; tp10 µs; see Figure 3 - 1.5 A
Ptot total power dissipation Tsp =25°C; see Figure 1 - 0.83 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature 65 +150 °C
Source-drain diode
ISsource current Tsp =25°C - 385 mA
ISM peak source current Tsp =25°C; pulsed; tp10 µs - 1.5 mA
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 3 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
Fig 1. Normalized total power dissipation as a
function of solder point temperature Fig 2. Normalized continuous drain current as a
function of solder point temperature
Tsp =25°C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
03aa17
0
40
80
120
0 50 100 150 200
Tsp (°C)
Pder
(%)
03aa25
0
40
80
120
0 50 100 150 200
Tsp (°C)
Ider
(%)
Pder Ptot
Ptot 25 C
°
()
------------------------ 100 %×=Ider ID
ID25 C
°
()
---------------------100 %×=
03ai10
10
-2
10
-1
1
10
1 10 10
2
V
DS
(V)
I
D
(A)
DC 1 ms
100 µs
Lim it R
DSon
= V
DS
/ I
D
10 ms
100 ms
10 µs
t
p
=
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 4 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
5. Thermal characteristics
[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder point see Figure 4 - - 150 K/W
Rth(j-a) thermal resistance from junction to ambient [1] - - 350 K/W
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
003aab358
1
10
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
1 10
t
p
(s)
Z
th(j-sp)
(K/W)
single pulse
0.2
0.1
0.05
δ = 0.5
0.02
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 5 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID=10µA; VGS =0V
Tj=25°C 60--V
Tj=55 °C 55--V
VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =V
GS; see Figure 9 and 10
Tj=25°C 1 2 2.5 V
Tj= 150 °C 0.6 - - V
Tj=55 °C - - 2.75 V
IDSS drain leakage current VDS =48V; V
GS =0V
Tj=25°C --1µA
Tj= 150 °C --10µA
IGSS gate leakage current VGS =±15 V; VDS = 0 V - 10 100 nA
RDSon drain-source on-state
resistance VGS = 10 V; ID= 500 mA; see Figure 6 and 8
Tj=25°C - 0.78 3
Tj= 150 °C - 1.45 5.5
VGS = 4.5 V; ID= 75 mA; see Figure 6 and 8- 1.2 4
Dynamic characteristics
QG(tot) total gate charge ID= 300 mA; VDS =30V; V
GS =10V;
see Figure 11 and 12 - 0.69 - nC
QGS gate-source charge - 0.1 - nC
QGD gate-drain charge - 0.27 - nC
Ciss input capacitance VGS =0V; V
DS = 10 V; f = 1 MHz;
see Figure 14 - 3150pF
Coss output capacitance - 6.8 30 pF
Crss reverse transfer capacitance - 3.5 10 pF
ton turn-on time VDS =50V; R
L= 250 ; VGS =10V;
RG=50; RGS =50- 2.5 10 ns
toff turn-off time - 11 15 ns
Source-drain diode
VSD source-drain voltage IS= 300 mA; VGS = 0 V; see Figure 13 - 0.85 1.5 V
trr reverse recovery time IS= 300 mA; dIS/dt = 100 A/µs; VGS =0V - 30 - ns
Qrrecovered charge - 30 - nC
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 6 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
Tj=25°CT
j=25°C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
Tj=25°C and 150 °C; VDS >I
D×RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
03ai12
0
0.2
0.4
0.6
0.8
1
0 0.5 1 1.5 2
V
DS
(V)
I
D
(A)
10 5
4.5
4
3.5
V
GS
(V) =
03ai14
0
1000
2000
3000
4000
5000
0 0.2 0.4 0.6 0.8 1
I
D
(A)
R
DSon
(m)4
5
4.5
10
V
GS
(V) =
03ai16
0
0.2
0.4
0.6
0.8
1
0246
V
GS
(V)
I
D
(A)
T
j
= 150 °C25 °C
03aa28
0
0.6
1.2
1.8
2.4
-60 0 60 120 180
T
j
(°C)
a
aRDSon
RDSon 25 C
°
()
------------------------------
=
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 7 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
ID= 0.25 mA; VDS =V
GS Tj=25°C; VDS =5V
Fig 9. Gate-source threshold voltage as a function of
junction temperature Fig 10. Sub-threshold drain current as a function of
gate-source voltage
ID= 0.3 A; VDS =30V
Fig 11. Gate-source voltage as a function of gate
charge; typical values Fig 12. Gate charge waveform definitions
003aab101
0
1
2
3
-60 0 60 120 180
Tj (°C)
VGS(th)
(V)
min
typ
max
003aab100
10-6
10-5
10-4
10-3
0123
VGS (V)
ID
(A)
min typ max
003aab359
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8
Q
G
(nC)
V
GS
(V) I
D
= 0.3 A
T
j
= 25 °C
V
DS
= 30 V
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 8 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
Tj=25°C and 150 °C; VGS =0V V
GS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03ai17
0
0.2
0.4
0.6
0.8
1
0.2 0.4 0.6 0.8 1
V
SD
(V)
I
S
(A)
T
j
= 25 °C
150 °C
03ai18
1
10
10
2
10
-1
1 10 10
2
V
DS
(V)
C
(pF) C
iss
C
rss
C
oss
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 9 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
7. Package outline
Fig 15. Package outline SOT23
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT23
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 10 of 12
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
8. Revision history
Table 6: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
2N7002E_3 20060428 Product data sheet - - 2N7002E_2
Modifications: Table 5 “Characteristics”: VGS(th) ID condition modified
Table 5 “Characteristics”: VGS(th) maximum limits modified
Table 5 “Characteristics”: RDSon typical values modified
Table 5 “Characteristics”: gfs removed
Table 5 “Characteristics”: Addition of QG(tot), QGS and QGD
Table 5 “Characteristics”: Ciss, Coss and Crss values modified
Table 5 “Characteristics”: ton and toff typical values modified
Figure 3,4,5,6,7,9,10,13 and 14: modified
Figure 11: added
2N7002E_2 20050426 Product data sheet - 9397 750 14944 2N7002E-01
2N7002E-01 20020211 Product data - 9397 750 09095 -
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
2N7002E_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 03 — 28 April 2006 11 of 12
9. Data sheet status
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level Data sheet status[1] Product status[2] [3] Definition
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights. Date of release: 28 April 2006
Document number: 2N7002E_3
Published in The Netherlands
Philips Semiconductors 2N7002E
N-channel TrenchMOS FET
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information . . . . . . . . . . . . . . . . . . . . 11