DS30376 Rev. 4 - 2 1 of 3 2N7002E
www.diodes.com ã Diodes Incorporated
2N7002E
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·Low On-Resistance: RDS(ON)
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Available in Lead Free/RoHS Compliant Version
(Note 2)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £ 1.0MWVDGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current Continuous ID240 mA
Total Power Dissipation (Note 1) Pd300 mW
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
·Case: SOT-23
·Case Material: UL Flammability Classification Rating 94V-0
·Moisture sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Also Available in Lead Free Plating (Matte Tin
Finish annealed over Alloy 42 leadframe). Please see
Ordering Information, Note 5, on Page 2
·Terminal Connections: See Diagram
·Marking (See Page 2): K7B
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approx.)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
TCUDORPWEN
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
SPICE MODEL: 2N7002E
DS30376 Rev. 4 - 2 2 of 3 2N7002E
www.diodes.com
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage BVDSS 60 70 ¾VVGS = 0V, ID = 10mA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ¾¾
1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ¾¾±10 nA VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(th) 1.0 ¾2.5 V VDS = VGS, ID = 250mA
Static Drain-Source On-Resistance @ Tj = 25°C RDS (ON) ¾
¾
1.6
2.0
3
4WVGS = 10V, ID = 250mA
VGS = 4.5V, ID = 200mA
On-State Drain Current ID(ON) 0.8 1.0 ¾AVGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ¾¾mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ¾22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ¾11 25 pF
Reverse Transfer Capacitance Crss ¾2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ¾7.0 20 ns VDD = 30V, ID= 0.2A,
RL = 150W,V
GEN = 10V,
RGEN = 25W
Turn-Off Delay Time tD(OFF) ¾11 20 ns
TCUDORPWEN
Date Code Key
K7B = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: P = 2003
M = Month ex: 9 = September
K7B
YM
Marking Information
Ordering Information (Note 4)
Notes: 3. Short duration test pulse used to minimize self-heating effect.
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to part number above.
Example: 2N7002E-7-F.
Device Packaging Shipping
2N7002E-7 SOT-23 3000/Tape & Reel
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Year 2003 2004 2005 2006 2007 2008 2009
Code PRST
UVW
DS30376 Rev. 4 - 2 3 of 3 2N7002E
www.diodes.com
0
0.2
0.4
0.6
0.8
1
.
0
01 2 345
I , DRAIN-SOURCE CURRENT (A)
D
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fi
g
. 1 On-Re
g
ion Characteristics
V=10V
GS
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
5.5V
10V
5.0V
2.1V 0
V , GATE TO SOURCE VOLTAGE (V)
GS
Fi
g
. 2 Drain Current vs. Gate-Source Volta
g
e
0.4
0.8
1.2
1.6
2
.
0
01234 567
I , DRAIN CURRENT (A)
D
T = -55°C
A
T = 125°C
A
T = 25°C
A
0
1
2
3
4
5
0246810
R - DRAIN-SOURCE-ON-RESISTANCE (W)
DS(ON),
V - GATE TO SOURCE VOLTAGE (V)
GS
Fig. 3 On Resistance vs.
Gate to Source Volta
g
e
I = 75mA
D
I = 250mA
D
TCUDORPWEN
0
1
2
3
4
5
0 0.2 0.4 0.6 0.8 1.0
R DRAIN-SOURCE-ON-RESISTANCE (W)
DS(ON),
I , DRAIN CURRENT (A)
D
Fig. 4 On Resistance vs.
Drain Current
V = 4.5V
GS
V = 10V
GS
0
T , JUNCTION TEMPERATURE (°C)
J
Fi
g
. 5 On-Resistance vs. Junction Temperature
V = 4.5V @ 200mA
GS
1
2
3
4
5
-75 -50 -25 025
50 75 100 125 150
R , DRAIN-SOURCE
DS(ON)
ON-RESISTANCE ( )W
V = 10V @ 250mA
GS
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 6, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
250
300
350
0
