SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo,67 TYPE No. ST61t $T6130 c720t PT3760 2N914/51 2N5272t MD1T2369t TiIS49t ST70 LDA414 2N52928 2N5263 FM911 FM1613 FM871 2SD228 RT1253M AT380 AT383 AT386 $18200f NS477 NS480 NS732 NS733A NS1972 NS1975 2N1965t ST6593 B33D4 D3305 RT696AM FTOOS5 RT719Mt 2N1962t 2N1963/46t DISS. @25C 360m 360m 360m 360m 360m 360m 360m 360m 360m 360m 360m 360m m 375m m 375m m 375m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m 400m fab 400M8A 400MA|2.0m 420M 460M8A| 2.0m 480M |2.0m 500MA|2.1m 500M5 500M$A|2.9m 6O0MSA 7OO0M |2.9m 800MA|2.1m 1.0684 |2.9m m 50M8A|2.1m m 60M8A|2.1m . m 96MA [2.1m m 2.3m m 60MSA|2.3m 60M8A/2.3m m 60M5A|2.3m 60MEA|2.3m 80MA 12.2m 80MA |2.2m 80M |2.2m 80M 2.6m 90M5 90M5 100M84|2.7m 100M8A|2.2m 112M8A|4.0m 150M5A|4.0m 150M |4.5m 175M [3.2m 180M |2.3m m 200M$A|2.7m 200M5A D.A.T.A. 4.0 |100m 5.0 5.0 |200m 4:5 |200m 4:5 |200m 3.0 3.5 |150m 4.5 |100m 25 | 25m 7.0 7.0 7.0 5.0 5.0 6.0 6.0 6.0 7.0 6.0 | 50m 8.0 | 50m 4.0 |100m 4.0 5.0 5.0 5.0 [500m 5.0 5.0 |500m 5.0 |500m 5.0 6.0 | 75m 5.0 5.0 |200m 5.0 /200m 25 1.0% }100m 5.0 |2. 5.00 |1. 5.0% | 1.0md 1004 1.0% 5.0 5.0 5.00 5.00 | 1 IN ORDER OF (1) MAX COLLECTOR DISSIPATION 20 t#A 30 tA 60 Tt 50 TA 30 t#A 100 ta# a 5OA 20 t#A 20 tA 7.0 30 20 65 55 130 120 45 40 83 20 100n {5.0% |100ug| 40 ta 100n 50ud 60nd 100n 100n 100ng 100u 2.0ud .25uD 100u u 100uZ/100 ta 10D) 1 40 tA 100/1 20 tA 5.0% |100ud| 25MtA 5.00 |100ud| 65MtA 10D|5.0m% | 45 t 1536. 35 1 30 + 1.00 | 1 106 | 1 SYMBOLS AND CODES EXPLAINED IN INTERPRETER Cob |STRUC EO TURE | s/a |AD T0200/D E PEA |TOt8 |@ PEA |TO18 |AD PE TO18 |A PL TO18 TOS1 | AD TO18 | AD TO122/P TO92 | B TO18 @ 7T0122/P TO18 | AD u34 A 67b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)LINE TYPE No. No. 2# |2SA311 5# |BLY30 $G0034 BUY19 MO0S34 2SA412 cs696 2SA646 28C 1156 2N645 2N770 $1342P CS718 $GO034A BSW68A FT34C 2N501/18 SI353P 2N2235 BC194 V205 BSS43 NS9210 TQ60A TQ63A 2N1959A/51 2N1958/18 2N 1964/46 2N2927/51 RT1116 USAFS 16ES048M 2N1444 PT6905 CP406 PT6905B MM2262 117 fab 50.0M 50.0M 5OMSA 50.0MSA 60.0MSA 80.0M 64.0MA 7OMS 70M 75.0M5 75MSA 80.0MS 80.0MA 80MEA 80M5 80.0M5A 90.0M5 90.0M 100M8A 40OMSA 100MSA 100M$ 100MS 100M5A 100M5A 100M 100M$A 100MSA 100M8A 100M 100M8A 100M 100MS 100M5 100MSA 100MSA RISE TIME tr 270n 300ndD 300n 60n n 180n 200nt 200nD 6.0n 70n 50ndt 200nt 300n 500nZt 500ne 18n 40nt 25ne n 25nGt fn 35n 40nZt 50n 50n 50n 60nD 65nD 65nD 75 80n 100nD 2 350nt 500nd 500no 1.0u n D.A.T.A. DELAY TIME td 50n 100n 50n STORE! FALL TIME | TIME ts tf 1.5ud 300n 650nD 300n 1.0uZt 1.0ud 10n 50ngt 600no 150ndt 15n 700nSt 40n 120n 120n - 45nZ 20n IN FREE AIR @ 25C 150m 30 @ 28D 20 8 60m 150m 15D 7.0 Z 7.0 Veb le MAX. | Cob 1.0 Z |400m 5.0 2.0 2.0 2.0 1.0 40p p 2.0u 10m _ | 20 1.5m | 180 20 20 40 SYMBOLS AND CODES EXPLAINED IN INTERPRETER r'bb xX Cob IN ORDER OF (1) fab, (2) MAX RISE TIME & STRUCTURE) Mj MAX. |200 P-PNP N-NPN T P.D Ge S s A|TEMP EO s/a AD T0200 IDE TOS a TO59 117