BD243C BD244C Complementary power transistors Features . Complementary NPN-PNP devices Applications Power linear and switching Description 1 The device is manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value BD243C (NPN) Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitte-base voltage (IC = 0) 5 V Collector current 6 A Collector peak current (tP < 5ms) 10 A Base current 2 A PTOT Total dissipation at Tc = 25C 65 W Tstg Storage temperature -65 to 150 C 150 C ICM IB TJ 2/10 BD244C (PNP) VCBO IC Note: Unit Max. operating junction temperature For PNP types voltage and current values are negative BD243C BD244C 2 Electrical characteristics Electrical characteristics (Tcase = 25C; unless otherwise specified) Table 3. Symbol Electrical characteristics Parameter Test Conditions Min. Typ. Max. Unit ICES Collector cut-off current (V BE = 0) VCE = 100V 0.4 mA ICEO Collector cut-off current (IB = 0) VCE = 60V 0.7 mA IEBO Emitter cut-off current (IC = 0) VEB = 5V 1 mA Collector-emitter sustaining voltage (IB = 0) IC = 30mA Collector-emitter saturation voltage IC = 6A __ IB = 1A 1.5 V VBE(1) Base-emitter voltage IC = 6A _____ IB = 1A 2 V hFE(1) DC current gain IC = 0.3mA__ VCE = 4V IC = 3A _____ VCE = 4V VCEO(sus)(1) VCE(sat)(1) 100 V 30 15 1. Pulsed duration = 300 ms, duty cycle 2%. Note: For PNP types voltage and current values are negative. 3/10 Electrical characteristics 2.1 4/10 BD243C BD244C Typical characteristics Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) BD243C BD244C Figure 8. Electrical characteristics Base-emitter saturation voltage (NPN) Figure 9. Base-emitter saturation voltage (PNP) Figure 10. Base-emitter saturation voltage (NPN) Figure 11. Base-emitter saturation voltage (PNP) Figure 12. BT(ON) time (NPN) Figure 13. BT(ON) time (PNP) 5/10 Electrical characteristics BD243C BD244C Figure 14. Resistive load switching time Figure 15. Resistive load switching time (NPN) (PNP) Figure 16. Resistive load switching time Figure 17. Resistive load switching time (NPN) (PNP) Figure 18. Collector-base and collector- Figure 19. Collector-base and collectoremitter capacitance (NPN) emitter capacitance (PNP) 6/10 BD243C BD244C 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data BD243C BD244C TO-220 Mechanical data DIM. mm. MIN. MAX. 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 D 15.25 15.75 D1 1.27 E 10 e 2.40 2.70 e1 4.95 5.15 10.40 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 8/10 TYP A 28.90 oP 3.75 3.85 Q 2.65 2.95 BD243C BD244C Revision history 4 Revision history Table 4. Revision history Date Revision Changes 13-Sep-2005 4 New datasheet according to MLD-PWR/05/1267 25-Jul-2007 5 Figures 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18 and figure 19, added 9/10 BD243C BD244C Please Read Carefully: Information in this document is provided solely in connection with ST products. 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