BD243C-S - BOURNS - Datasheet.Online

July 2007 Rev 5 1/10

BD243C

BD244C

Complementary power transistors

Features

■Complementary NPN-PNP devices

Applications

■Power linear and switching

Description

The device is manufactured in Planar technology

with “Base Island” layout. The resulting transistor

shows exceptional high gain performance

coupled with very low saturation voltage. The

PNP type is BD244C.

Figure 1. Internal schematic diagram

TO-220

www.st.com

Table 1. Device summary

Order code Marking Package Packaging

BD243C

BD244C

BD243C

BD244C TO-220 Tube

Absolute maximum ratings BD243C BD244C

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1 Absolute maximum ratings

Note: For PNP types voltage and current values are negative

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

BD243C (NPN) BD244C (PNP)

VCBO Collector-base voltage (IE = 0) 100 V

VCEO Collector-emitter voltage (IB = 0) 100 V

VEBO Emitte-base voltage (IC = 0) 5 V

ICCollector current 6 A

ICM Collector peak current (tP < 5ms) 10 A

IBBase current 2 A

PTOT Total dissipation at Tc = 25°C 65 W

Tstg Storage temperature -65 to 150 °C

TJMax. operating junction temperature 150 °C

BD243C BD244C Electrical characteristics

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2 Electrical characteristics

(Tcase = 25°C; unless otherwise specified)

Note: For PNP types voltage and current values are negative.

Table 3. Electrical characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0) VCE = 100V 0.4 mA

ICEO

Collector cut-off current

(IB = 0) VCE = 60V 0.7 mA

IEBO

Emitter cut-off current

(IC = 0) VEB = 5V 1mA

VCEO(sus)(1)

1. Pulsed duration = 300 ms, duty cycle ≤ 2%.

Collector-emitter

sustaining voltage (IB = 0) IC = 30mA 100 V

VCE(sat)(1) Collector-emitter

saturation voltage IC = 6A __ IB = 1A 1.5 V

VBE(1) Base-emitter voltage IC = 6A _____ IB = 1A 2V

hFE(1) DC current gain IC = 0.3mA__ VCE = 4V

IC = 3A _____ VCE = 4V

Electrical characteristics BD243C BD244C

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2.1 Typical characteristics

Figure 2. Safe operating area Figure 3. Derating curve

Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP)

Figure 6. Collector-emitter saturation

voltage (NPN)

Figure 7. Collector-emitter saturation

voltage (PNP)

BD243C BD244C Electrical characteristics

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Figure 8. Base-emitter saturation

voltage (NPN)

Figure 9. Base-emitter saturation

voltage (PNP)

Figure 10. Base-emitter saturation

voltage (NPN)

Figure 11. Base-emitter saturation

voltage (PNP)

Figure 12. BT(ON) time (NPN) Figure 13. BT(ON) time (PNP)

Electrical characteristics BD243C BD244C

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Figure 14. Resistive load switching time

(NPN)

Figure 15. Resistive load switching time

(PNP)

Figure 16. Resistive load switching time

(NPN)

Figure 17. Resistive load switching time

(PNP)

Figure 18. Collector-base and collector-

emitter capacitance (NPN)

Figure 19. Collector-base and collector-

emitter capacitance (PNP)

BD243C BD244C Package mechanical data

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3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in

ECOPACK® packages. These packages have a Lead-free second level

interconnect . The category of second level interconnect is marked on the

package and on the inner box label, in compliance with JEDEC Standard JESD97.

The maximum ratings related to soldering conditions are also marked on the inner

box label. ECOPACK is an ST trademark. ECOPACK specifications are available

at: www.st.com

Package mechanical data BD243C BD244C

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DIM.

mm.

MIN. TYP MAX.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.49 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L13 14

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

TO-220 Mechanical data

BD243C BD244C Revision history

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4 Revision history

Table 4. Revision history

Date Revision Changes

13-Sep-2005 4 New datasheet according to MLD-PWR/05/1267

25-Jul-2007 5 Figures 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18 and

figure 19, added

BD243C BD244C

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