MMBT3904WT1 - ON Semiconductor

November, 2011 − Rev. 8

1Publication Order Number:

MMBT3904WT1/D

MMBT3904WT1, NPN,

SMMBT3904WT1, NPN,

MMBT3906WT1, PNP

General Purpose

Transistors

NPN and PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−323/SC−70 package which

is designed for low power surface mount applications.

Features

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MMBT3904WT1, SMMBT3904WT1

MMBT3906WT1

VCEO 40

−40

Vdc

Collector−Base Voltage

MMBT3904WT1, SMMBT3904WT1

MMBT3906WT1

VCBO 60

−40

Vdc

Emitter−Base Voltage

MMBT3904WT1, SMMBT3904WT1

MMBT3906WT1

VEBO 6.0

−5.0

Vdc

Collector Current − Continuous

MMBT3904WT1, SMMBT3904WT1

MMBT3906WT1

IC200

−200

mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 1)

@TA = 25°C

PD150 mW

Thermal Resistance, Junction−to−Ambient RqJA 833 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

COLLECTOR

BASE

EMITTER

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Device Package Shipping†

ORDERING INFORMATION

xx = AM for MMBT3904WT1,

SMMBT3904WT

= 2A for MMBT3906WT1

M = Date Code*

G=Pb−Free Package

SMMBT3904WT1G SC−70/

SOT−323

(Pb−Free)

3000 / Tape &

Reel

MMBT3904WT1G SC−70/

SOT−323

(Pb−Free)

3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

SC−70 (SOT−323)

CASE 419

STYLE 3

MARKING DIAGRAM

xx M G

MMBT3906WT1G SC−70/

SOT−323

(Pb−Free)

3000 / Tape &

Reel

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1

(IC = −1.0 mAdc, IB = 0) MMBT3906WT1

V(BR)CEO 40

−40

−

Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0) MMBT3904WT1, SMMBT3904WT1

(IC = −10 mAdc, IE = 0) MMBT3906WT1

V(BR)CBO 60

−40

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0) MMBT3904WT1, SMMBT3904WT1

(IE = −10 mAdc, IC = 0) MMBT3906WT1

V(BR)EBO 6.0

−5.0

−

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1

(VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1

IBL

−

−50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1

(VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1

ICEX

−

−50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = −0.1 mAdc, VCE = −1.0 Vdc) MMBT3906WT1

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

hFE 40

100

−

300

−

300

−

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

0.2

0.3

−0.25

−0.4

Vdc

Base −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat) 0.65

−

−0.65

−

0.85

0.95

−0.85

−0.95

Vdc

2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) MMBT3906WT1

fT300

250

−

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3906WT1

Cobo

−

4.0

4.5

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3906WT1

Cibo

−

8.0

10.0

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1

hie 1.0

2.0

k W

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1

hre 0.5

0.1

8.0

X 10−4

Small−Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1

hfe 100

100

400

−

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1

(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1

hoe 1.0

3.0

mmhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)

MMBT3904WT1, SMMBT3904WT1

(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz) MMBT3906WT1

−

5.0

4.0

SWITCHING CHARACTERISTICS

Characteristic Condition Symbol Min Max Unit

Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc)

MMBT3904WT1, SMMBT3904WT1

(VCC = −3.0 Vdc, VBE = 0.5 Vdc) MMBT3906WT1

−

Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc)

MMBT3904WT1, SMMBT3904WT1

(IC = −10 mAdc, IB1 = −1.0 mAdc) MMBT3906WT1

−

Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc)

MMBT3904WT1, SMMBT3904WT1

(VCC = −3.0 Vdc, IC = −10 mAdc) MMBT3906WT1

−

200

225

Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1

(IB1 = IB2 = −1.0 mAdc) MMBT3906WT1

tf−

−

MMBT3904WT1, SMMBT3904WT1

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916 CS < 4 pF*

+3 V

275

10 k

CS < 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V

+10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

MMBT3904WT1, SMMBT3904WT1

TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Turn −On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

Figure 4. Rise Time

IC, COLLECTOR CURRENT (mA)

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

t , RISE TIME (ns)

Figure 5. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 6. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

t , STORAGE TIME (ns)

′

VCC = 40 V

IC/IB = 10

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

IC/IB = 10

IC/IB = 20

IC/IB = 10

IC/IB = 20

t′s = ts - 1/8 tf

IB1 = IB2

MMBT3904WT1 MMBT3904WT1

TJ = 25°C

TJ = 125°C

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 7. Noise Figure

f, FREQUENCY (kHz)

0.1

Figure 8. Noise Figure

RS, SOURCE RESISTANCE (k OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

SOURCE RESISTANCE = 500 W

IC = 100 mA

SOURCE RESISTANCE = 1.0 k

IC = 50 mA

MMBT3904WT1 MMBT3904WT1

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

MMBT3904WT1, SMMBT3904WT1

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 9. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 10. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , CURRENT GAIN

h , OUTPUT ADMITTANCE ( mhos)

Figure 11. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 12. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (X 10 )

h , INPUT IMPEDANCE (k OHMS)

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

-4

MMBT3904WT1 MMBT3904WT1

TYPICAL STATIC CHARACTERISTICS

Figure 13. DC Current Gain

IC, COLLECTOR CURRENT (mA)

100

1000

1.0

TJ = 150°C

25°C

-55°C

hFE, DC CURRENT GAIN

10 100 1000

VCE = 1 V

MMBT3904WT1

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

MMBT3904WT1, SMMBT3904WT1

Figure 14. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

MMBT3904WT1

Figure 15. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 16. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.1

0.3

0.4

0.5

0.7

0.8

0.9

10.10.010.0010.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 17. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.0010.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

0.2

0.6

IC/IB = 10

150°C

−55°C

25°C

IC/IB = 10

150°C

−55°C

25°C

150°C

−55°C

25°C

VCE = 1 V

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

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MMBT3904WT1, SMMBT3904WT1

Figure 18. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100

COEFFICIENT (mV/ C)

200

-1.0

-1.5

-2.0

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

MMBT3904WT1

Figure 19. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

Cibo

Cobo

TJ = 25°C

TJ = 125°C

MMBT3904WT1

Figure 20. Current Gain Bandwidth Product

vs. Collector Current

Figure 21. Safe Operating Area

IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)

10001001010.1

100

1000

1001010.1

0.001

0.01

0.1

, CURRENT−GAIN−BANDWIDTH

PRODUCT (MHz)

IC, COLLECTOR CURRENT (A)

VCE = 1 V

TA = 25°C1 mS

Thermal Limit

1 S

100 mS 10 mS

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

MMBT3906WT1

Figure 22. Delay and Rise Time

Equivalent Test Circuit

Figure 23. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916 CS < 4 pF*

3 V

275

10 k

CS < 4 pF*

< 1 ns

+10.6 V 300 ns

DUTY CYCLE = 2%

< 1 ns

+9.1 V

10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C

TJ = 125°C

Figure 24. Turn −On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

MMBT3906WT1

Figure 25. Fall Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

MMBT3906WT1

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

SOURCE RESISTANCE = 2.0 k

IC = 100 mA

SOURCE RESISTANCE = 2.0 k

IC = 50 mA

Figure 26.

f, FREQUENCY (kHz)

1.0

2.0

3.0

4.0

5.0

0.1

Figure 27.

RS, SOURCE RESISTANCE (kW)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

100

4.0

6.0

8.0

2.0

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

MMBT3906WT1 MMBT3906WT1

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

MMBT3906WT1

h PARAMETERS

hfe, CURRENT GAIN

Figure 28. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 29. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , OUTPUT ADMITTANCE ( mhos)

Figure 30. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 31. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (X 10 )

h , INPUT IMPEDANCE (k

0.1 0.2 1.0 2.0 5.0 10

0.5

0.1 0.2 1.0 2.0 5.0 10

0.5

7.0

5.0

0.1 0.2 1.0 2.0 5.0 10

0.5

-4

(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)

Ω)

MMBT3906WT1 MMBT3906WT1

0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0

0.3

0.7

3.0

7.0

0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0

STATIC CHARACTERISTICS

Figure 32. DC Current Gain

IC, COLLECTOR CURRENT (mA)

100

1000

1.0

TJ = 150°C

25°C

-55°C

hFE, DC CURRENT GAIN

10 100 1000

VCE = 1 V

MMBT3906WT1

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

MMBT3906WT1

Figure 33. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

MMBT3906WT1

Figure 34. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 35. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.05

0.15

0.20

0.25

0.40

0.45

0.50

10.10.010.0010.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 36. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.0010.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

0.10

0.30

IC/IB = 10

150°C

−55°C

25°C

IC/IB = 10

150°C

−55°C

25°C

150°C

−55°C

25°C

VCE = 1 V

0.35

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

MMBT3906WT1

Figure 37. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100 200

-1.0

-1.5

-2.0

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

qVC FOR VCE(sat)

qVS FOR VBE(sat)

V, TEMPERATURE COEFFICIENTS (mV/ C)°θ

MMBT3906WT1

Cibo

Cobo

Figure 38. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

TJ = 25°C

TJ = 125°C

MMBT3906WT1

Figure 39. Current Gain Bandwidth Product

vs. Collector Current

Figure 40. Safe Operating Area

IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)

10001001010.1

100

1000

1001010.1

0.001

0.01

0.1

, CURRENT−GAIN−BANDWIDTH

PRODUCT (MHz)

IC, COLLECTOR CURRENT (A)

VCE = 1 V

TA = 25°C

1 mS

Thermal Limit

1 S

100 mS 10 mS

MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP

http://onsemi.com

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

AA2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

MIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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Phone: 81−3−5817−1050

MMBT3904WT1/D

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