SIEMENS BFQ 19S NPN Silicon RF Transistor * For fow noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA * CECC-type available: CECC 50 002/259 PSO5162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking | Ordering Code Pin Configuration Package BFa19s_ |[FGs_ae27o2-Fi0sg._ = |1=B |2=c |3=E _|SoT-89 Maximum Ratings Parameter Symbol Values Unit Coilector-emitter voltage VoEo 15 Vv Collector-base voltage Vcso 20 Emitter-base voltage Vepo 3 Collector current Io 75 mA Base current le 12 Total power dissipation Prot Ww Tg $ 85C 1 Junction temperature qj 150 C Ambient temperature Ta - 65... + 150 Storage temperature T stg - 65... + 150 Thermal! Resistance Junction - soldering point 1) [Rn JS | <65 KAY Semiconductor Group 1290 12.96SIEMENS BFQ 198 Electrical Characteristics at T, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. _ typ. [max. DC Characteristics Collector-emitter breakdown voltage ViBR)CEO Vv lc=1mMA, lp =0 15 - - Collector-emitter cutoff current oes pA Voce = 20 V, Veg = 0 - - 100 Collector-base cutoff current lcpo nA Vop = 10V, f= 0 - : 100 Emitter-base cutoff current leBo HA Ven =2V, Ig =0 - - 10 DC current gain fee - Io = 70 MA, Vog =8V 40 100 220 Semiconductor Group 4291 12.96SIEMENS BFQ 19S Electrical Characteristics at T, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. {typ. [max AC Characteristics Transition frequency lo =70 MA, Veg = 8 V, f= 500 MHz 5.5 GHz Collector-base capacitance Vop = 10 V, f= 1 MHz 1.5 Coliector-emitter capacitance Voce = 10 V, f= 1 MHz 0.4 Emitter-base capacitance Veg = 0.5 V, f= 1 MHz 4.4 pF Noise figure Io = 20 MA, VoE=8V, Zg = Zeopt f= 900 MHz f= 1.8 GHz Power gain 2) Io = 70 MA, Voge =8V, Zs = Zeopt 4= ZLopt f = 900 MHz f= 1.8 GHz 11.5 Transducer gain lo = 30 MA, Veg = 8 V, Zy =Z,_= 50 2 f = 900 MHz f= 1.8 GHz \Spy@l? dB Third order intercept point Ig = 70 MA, Voge = 8 V, f= 900 MHz Zg =Z,= 502 IPs 35 dBm Semiconductor Group 1292 12.96SIEMENS BFQ 198 Total power dissipation P,., = f(7,*, Ts) * Package mounted on epoxy 900 800 700 600 500 400 300 200 100 0 0 20 40 GO 80 100 120 C 150 ores Sie Als Permissible Pulse Load Ainis = f (tp) Permissible Pulse Load Piotmax/Protoc = f (tp) ge CMT Bt Tn | 101 v as: aa b et] A H A i Mil I CUNT FT a SS THI TE UT a TS ING Z| TT NT ll l Ail is i la, ; 107 10% 10 10% 10 10% 107s 10 eb Semiconductor Group 1293 12.96