MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HA-34H IC ................................................................... 800A VCES ....................................................... 1700V Insulated Type 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 4 - M8 NUTS 570.25 C C E E CM E G E 140 C 30 C 1240.25 20 C E E CIRCUIT DIAGRAM G C 16.5 3 - M4 NUTS 2.5 6 - 7 MOUNTING HOLES 5 18.5 35 61.5 11 18 LABEL 31.5 28 38 5 14.5 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage -- Mounting torque -- Mass Conditions VGE = 0V VCE = 0V DC, TC = 95C Pulse Ratings 1700 20 800 1600 800 1600 9200 -40 ~ +150 -40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 (Note 1) Pulse TC = 25C, IGBT part (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Unit V V A A A A W C C V N*m N*m N*m kg ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V Min -- Limits Typ -- IC = 80mA, VCE = 10V 4.5 5.5 6.5 V -- 2.75 3.30 93 13.3 5.1 4.4 -- -- -- -- 2.40 -- 135 -- -- 0.012 0.5 3.58 -- -- -- -- -- 1.20 1.50 2.00 0.60 3.12 2.00 -- 0.0135 0.042 -- A Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 850V, IC = 800A, VGE = 15V VCC = 850V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied (Note 4) -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max 20 Unit mA V nF nF nF C s s s s V s C K/W K/W K/W Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (T j) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-34H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGE = 10V 800 VGE = 9V 400 VGE = 8V VGE = 7V 0 2 4 6 8 VCE = 10V 1200 800 400 Tj = 25C Tj = 125C 0 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V 4 3 2 1 Tj = 25C Tj = 125C 0 0 400 800 1200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE = 13V 1600 COLLECTOR CURRENT IC (A) VGE = 14V VGE = 15V 1200 VGE = 20V 0 EMITTER-COLLECTOR VOLTAGE VEC (V) VGE = 12V VGE = 11V Tj = 25C 1600 IC = 1600A 8 IC = 800A 6 4 2 IC = 320A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 4 3 2 1 Tj = 25C Tj = 125C 0 Tj = 25C COLLECTOR CURRENT IC (A) 5 0 10 0 400 800 1200 EMITTER CURRENT IE (A) 1600 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 1600 103 7 VGE = 0V, Tj = 25C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 101 7 5 3 2 Cies Coes Cres 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Mar. 2003 MITSUBISHI HVIGBT MODULES CM800HA-34H 3 2 tr tf 10-1 7 5 SWITCHING ENERGY (J/P) td(off) td(on) 5 7 102 5 7 103 2 3 2 3 REVERSE RECOVERY TIME trr (s) 100 7 5 5 trr 100 7 5 103 7 5 Irr 3 2 10-1 7 5 3 2 5 7 102 2 3 5 7 103 2 3 5 102 7 5 EMITTER CURRENT IE (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.0 VCC = 850V, VGE = 15V, RG = 2.5, Tj = 125C, 0.8 Inductive load HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 2.5 VCC = 850V, IC = 800A, VGE = 15V, Tj = 125C, 2.0 Inductive load 0.6 Eon Eoff 0.4 0.2 0 Erec 0 400 800 1200 Eon 1.0 Eoff 0.5 0 5 10 15 20 Erec 25 30 CURRENT (A) GATE RESISTANCE () GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) VCC = 850V IC = 800A 16 12 8 4 0 1.5 0 1600 20 GATE-EMITTER VOLTAGE VGE (V) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 2.5 2 COLLECTOR CURRENT IC (A) SWITCHING ENERGY (J/P) SWITCHING TIMES (s) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 VCC = 850V, VGE = 15V 3 RG = 2.5, Tj = 125C 2 Inductive load 0 2000 4000 6000 8000 GATE CHARGE QG (nC) 10000 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 5 3 2 Single Pulse TC = 25C Rth(j - c)Q = 0.0135K/W Rth(j - c)R = 0.042K/W 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) Mar. 2003