
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4043, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE.
Electrically Equivalent to IRFC450
MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MIN. TYP. MAX. UNITS
GATE TO SOURCE VOLTAGE VGS - - 20 Volts
CONTINUOUS DRAIN CURRENT @ TC = 25CID- - 12 Amps
PULSED DRAIN CURRENT @ TC = 25CIDM - - 48 Amps(pk)
OPERATING AND STORAGE TEMPERATURE TOP/TSTG -55 - +150 C
TERMAL RESISTANCE JUNCTION TO CASE R
JC - - 0.83 C/W
TOTAL DEVICE DISSIPATION @ TC = 25CPD- - 150 Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250mA
BVDSS 500 - - Volts
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mAVGS(TH) 2.0 - 4.0 Volts
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10Vdc, ID = 8.0A
PULSE TEST, t 300 ms, DUTY CYCLE d 2%
RDS(ON) - - 0.415 W
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0Vdc
VDS = 0.8xMax. Rating
VGS = 0Vdc, TJ = 125C
IDSS
- -
25
250
mA
GATE TO BODY LEAKAGE CURRENT V
= 20Vdc, IGSS - - 100 nA
TOTAL GATE CHARGE VGS = 10 Vdc
GATE TO SOURCE CHARGE VDS = 0.5V Max. Rating,
GATE TO DRAIN CHARGE ID = 12A
Qg
Qgs
Qgd
55
5.0
27
- 120
19
70
nC
TURN ON DELAY TIME VDD = 250V,
RISE TIME ID = 12A,
TURN OFF DELAY TIME RG = 2.35W
FALL TIME
td(ON)
tr
td(OFF)
tf
- - 35
190
170
130
nsec
FORWARD VOLTAGE IS = 12A, VGS = 0V
PULSE TEST, t 300 ms, DUTY CYCLE d 2%
VSD - - 1.7 Volts
REVERSE RECOVERY TIME IF = 12A
REVERSE RECOVERY CHARGE di/dt = 100A/msec
VDD 50V
trr
Qrr
-
-
-
-
1600
14
nsec
mC
INPUT CAPACITANCE VDS = 25 Vdc,
OUTPUT CAPACITANCE VGS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE f = 1 MHz
DRAIN TO CASE CAPACITANCE
Ciss
Coss
Crss
CDC
- 2700
600
240
12
- pF
SHD225505B