PD-90397H IRFG9110 JANTX2N7335 JANTXV2N7335 POWER MOSFET THRU-HOLE (MO-036AB) 100V, QUAD P-CHANNEL REF: MIL-PRF-19500/599 HEXFET(R) MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG9110 1.4 -0.75A Description HEXFET(R) MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high trans conductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain MO-036AB Features Simple Drive Requirements Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light Weight Absolute Maximum Ratings (Per Die) Parameter Symbol ID1 @ VGS = -10V, TC = 25C Value Continuous Drain Current -0.75 ID2 @ VGS = -10V, TC = 100C Continuous Drain Current -0.5 Units A IDM @TC = 25C Pulsed Drain Current -3.0 PD @TC = 25C Maximum Power Dissipation 1.4 W Linear Derating Factor 0.011 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 75 IAR Avalanche Current -0.75 mJ A EAR Repetitive Avalanche Energy 0.14 mJ dv/dt Peak Diode Recovery dv/dt -5.5 V/ns TJ TSTG Operating Junction and Storage Temperature Range Lead Temperature Weight -55 to + 150 300 (0.063 in. /1.6 mm from case for 10s) 1.3 (Typical) C g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-12-10 IRFG9110 JANTX2N7335/JANTXV2N7335 Electrical Characteristics For Each P-Channel Device @ Tj = 25C(Unless Otherwise Specified) Parameter Symbol BVDSS BVDSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gfs IDSS Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current IGSS Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time QG QGS QGD td(on) tr td(off) tf Min. Typ. Max. Units -100 --- --- --- -0.098 --- --- --- 1.4 --- --- 1.73 -2.0 --- -4.0 0.67 --- --- --- --- -25 --- --- -250 --- --- -100 --- --- 100 --- --- 15 --- --- 7.0 --- --- 8.0 --- --- 30 --- --- 60 --- --- 70 --- --- 80 Test Conditions V V/C VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -10V, ID2 = -0.5A VGS = -10V, ID1 = -0.75A V VDS = VGS, ID = -250A S VDS = -15V, ID2 = -0.5A VDS = -80V, VGS = 0V A VDS = -80V,VGS = 0V,TJ =125C VGS = -20V nA VGS = -20V ID1 = -0.75A nC VDS = -50V VGS = -10V VDD = -50V ID1 = -0.75A ns RG = 7.5 VGS = -10V Ls +LD Total Inductance --- 10 --- nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 200 85 30 --- --- --- pF Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) with Source wire internally bonded from Source pin to Drain pin VGS = 0V VDS = -25V = 1.0MHz Source-Drain Diode Ratings and Characteristics (Per Die) Parameter Symbol Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- -0.75 ISM Pulsed Source Current (Body Diode) --- --- -3.0 VSD Diode Forward Voltage --- --- -5.5 V TJ = 25C,IS = -0.75A, VGS = 0V trr Reverse Recovery Time --- --- 200 ns TJ = 25C, IF = -0.75A, VDD -50V Qrr Reverse Recovery Charge --- --- 9.0 C di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance (Per Die) Symbol Parameter Min. Typ. Max. RJC Junction-to-Case --- --- 17 RJA Junction-to-Ambient (Typical socket mount) --- --- 90 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = -25V, starting TJ = 25C, L = 266mH, Peak IL = -0.75A, VGS = -10V ISD -0.75A, di/dt -75A/s, VDD -100V, TJ 150C Pulse width 300 s; Duty Cycle 2% 2 International Rectifier HiRel Products, Inc. 2018-12-10 IRFG9110 JANTX2N7335/JANTXV2N7335 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 3 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2018-12-10 IRFG9110 JANTX2N7335/JANTXV2N7335 Fig 7. Typical Source-Drain Diode Forward Voltage Fig 9. Maximum Drain Current Vs. Case Temperature Fig 8. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 International Rectifier HiRel Products, Inc. 2018-12-10 IRFG9110 JANTX2N7335/JANTXV2N7335 Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 5 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2018-12-10 IRFG9110 JANTX2N7335/JANTXV2N7335 Case Outline and Dimensions - MO-036AB www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 6 International Rectifier HiRel Products, Inc. 2018-12-10 IRFG9110 JANTX2N7335/JANTXV2N7335 IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's product and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer's technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. For further information on the product, technology, delivery terms and conditions and prices, please contact your local sales representative or go to (www.infineon.com/hirel). WARNING Due to technical requirements products may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. 7 International Rectifier HiRel Products, Inc. 2018-12-10