Features
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light Weight
HEXFET® MOSFET technology is the key to IR HiRel
advanced line of power MOSFET transistors. The efficient
geometry design achieves very low on-state resistance
combined with high trans conductance. HEXFET
transistors also feature all of the well-established
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical parameter
temperature stability. They are well-suited for applications
such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, high energy pulse
circuits, and virtually any application where high reliability
is required. The HEXFET transistor’s totally isolated
package eliminates the need for additional isolating
material between the device and the heatsink. This
improves thermal efficiency and reduces drain
Absolute Maximum Ratings (Per Die)
Symbol Parameter Value Units
ID1 @ VGS = -10V, TC = 25°C Continuous Drain Current -0.75
A
ID2 @ VGS = -10V, TC = 100°C Continuous Drain Current -0.5
IDM @TC = 25°C Pulsed Drain Current -3.0
PD @TC = 25°C Maximum Power Dissipation 1.4 W
Linear Derating Factor 0.011 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 75 mJ
IAR Avalanche Current -0.75
A
EAR Repetitive Avalanche Energy 0.14 mJ
dv/dt Peak Diode Recovery dv/dt -5.5
V/ns
TJ Operating Junction and
°C
TSTG Storage Temperature Range
Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s)
Weight 1.3 (Typical) g
-55 to + 150
MO-036AB
IRFG9110
JANTX2N7335
JANTXV2N7335
1 2018-12-10
Product Summary
Part Number RDS(on) I
D
IRFG9110 1.4 -0.75A
100V, QUAD P-CHANNEL
REF: MIL-PRF-19500/599
HEXFET® MOSFET TECHNOLOGY
POWER MOSFET
THRU-HOLE (MO-036AB)
Description
For Footnotes, refer to the page 2.
PD-90397H
International Rectifier HiRel Products, Inc.
2 2018-12-10
IRFG9110
JANTX2N7335/JANTXV2N7335
International Rectifier HiRel Products, Inc.
Thermal Resistance (Per Die)
Symbol Parameter Min. Typ. Max. Units
RJC Junction-to-Case ––– ––– 17
RJA Junction-to-Ambient (Typical socket mount) ––– ––– 90 °C/W
Electrical Characteristics For Each P-Channel Device @ Tj = 25°C(Unless Otherwise Specified)
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -1.0mA
BVDSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.098 ––– V/°C Reference to 25°C, ID = -1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 1.4 VGS = -10V, ID2 = -0.5A
––– ––– 1.73 VGS = -10V, ID1 = -0.75A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
Gfs Forward Transconductance 0.67 ––– ––– S VDS = -15V, ID2 = -0.5A
IDSS Zero Gate Voltage Drain Current ––– ––– -25 µA VDS = -80V, VGS = 0V
––– ––– -250 VDS = -80V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Leakage Forward ––– ––– -100 nA VGS = -20V
Gate-to-Source Leakage Reverse ––– ––– 100 VGS = -20V
QG Total Gate Charge ––– ––– 15
nC
ID1 = -0.75A
QGS Gate-to-Source Charge ––– ––– 7.0 VDS = -50V
QGD Gate-to-Drain (‘Miller’) Charge ––– ––– 8.0 VGS = -10V
td(on) Turn-On Delay Time ––– ––– 30
ns
VDD = -50V
tr Rise Time ––– ––– 60 ID1 = -0.75A
td(off) Turn-Off Delay Time ––– ––– 70 RG = 7.5
tf Fall Time ––– ––– 80 VGS = -10V
Ls +LD Total Inductance ––– 10 ––– nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire inter-
nally bonded from Source pin to Drain pin
Ciss Input Capacitance ––– 200 –––
pF
VGS = 0V
Coss Output Capacitance ––– 85 ––– VDS = -25V
Crss Reverse Transfer Capacitance ––– 30 ––– ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– -0.75
ISM Pulsed Source Current (Body Diode) ––– ––– -3.0
VSD Diode Forward Voltage ––– ––– -5.5 V TJ = 25°C,IS = -0.75A, VGS = 0V
trr Reverse Recovery Time ––– ––– 200 ns TJ = 25°C, IF = -0.75A, VDD ≤-50V
Qrr Reverse Recovery Charge ––– ––– 9.0 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
A
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L = 266mH, Peak IL = -0.75A, VGS = -10V
ISD -0.75A, di/dt -75A/µs, VDD -100V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
3 2018-12-10
IRFG9110
JANTX2N7335/JANTXV2N7335
International Rectifier HiRel Products, Inc.
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
4 2018-12-10
IRFG9110
JANTX2N7335/JANTXV2N7335
International Rectifier HiRel Products, Inc.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Fig 8. Maximum Drain Current Vs.
Case Temperature
5 2018-12-10
IRFG9110
JANTX2N7335/JANTXV2N7335
International Rectifier HiRel Products, Inc.
Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
6 2018-12-10
IRFG9110
JANTX2N7335/JANTXV2N7335
International Rectifier HiRel Products, Inc.
Case Outline and Dimensions - MO-036AB
www.infineon.com/irhirel
Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555
Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776
San Jose, California 95134, USA Tel: +1 (408) 434-5000
Data and specifications subject to change without notice.
7 2018-12-10
IRFG9110
JANTX2N7335/JANTXV2N7335
International Rectifier HiRel Products, Inc.
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
