2N6052 Transistors
PNP Darlington Transistor
Military/High-RelN
V(BR)CEO (V)100
V(BR)CBO (V)100
I(C) Max. (A)12
Absolute Max. Power Diss. (W)150#
Maximum Operating Temp (øC)200õ
I(CBO) Max. (A)1.0m°
@V(CBO) (V) (Test Condition)50
h(FE) Min. Current gain.750
h(FE) Max. Current gain.18k
@I(C) (A) (Test Condition)6.0
@V(CE) (V) (Test Condition)3.0
f(T) Min. (Hz) Transition Freq4.0M
@I(C) (A) (Test Condition)5.0
@V(CE) (V) (Test Condition)3.0
V(CE)sat Max. (V)3.0
@I(C) (A) (Test Condition)12
@I(B) (A) (Test Condition)120m
t(d) Max. (s) Delay time.
t(r) Max. (s) Rise time
t(on) Max. (s) On time.
t(s) Max. (s) Storage time.
t(f) Max. (s) Fall time.
t(off) Max. (s) Off time
Semiconductor MaterialSilicon
Package StyleTO-3
Mounting StyleT
Pinout Equivalence Code3-4
Ckt. (Pinout) NumberTR00300004
Description