VS-HFA16TB120SPbF
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HEXFRED®
Ultrafast Soft Recovery Diode, 16 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Designed and qualified for industrial level
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16TB120SPbF is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120SPbF is especially well suited for use
as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED® product
line features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to “snap-off”
during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120SPbF is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package TO-263AB (D2PAK)
IF(AV) 16 A
VR1200 V
VF at IF2.3 V
trr (typ.) 30 ns
TJ max. 150 °C
Diode variation Single die
TO-263AB (D2PAK)
Anode
13
2
N/C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage VR1200 V
Maximum continuous forward current IFTC = 100 °C 16
ASingle pulse forward current IFSM 190
Maximum repetitive forward current IFRM 64
Maximum power dissipation PD
TC = 25 °C 151 W
TC = 100 °C 60
Operating junction and storage temperature range TJ, TStg -55 to +150 °C
VS-HFA16TB120SPbF
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage VBR IR = 100 μA 1200 - -
V
Maximum forward voltage VFM
IF = 16 A
See fig. 1
-2.53.0
IF = 32 A - 3.2 3.93
IF = 16 A, TJ = 125 °C - 2.3 2.7
Maximum reverse
leakage current IRM
VR = VR rated See fig. 2 -0.7520μA
TJ = 125 °C, VR = 0.8 x VR rated - 375 2000
Junction capacitance CTVR = 200 V See fig. 3 - 27 40 pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5 and 10
trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 30 -
nstrr1 TJ = 25 °C
IF = 16 A
dIF/dt = 200 A/μs
VR = 200 V
- 90 135
trr2 TJ = 125 °C - 164 245
Peak recovery current
See fig. 6
IRRM1 TJ = 25 °C - 5.8 10 A
IRRM2 TJ = 125 °C - 8.3 15
Reverse recovery charge
See fig. 7
Qrr1 TJ = 25 °C - 260 675 nC
Qrr2 TJ = 125 °C - 680 1838
Peak rate of fall of
recovery current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C - 120 -
A/μs
dI(rec)M/dt2 TJ = 125 °C - 76 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case RthJC - - 0.83
K/W
Thermal resistance,
junction to ambient RthJA Typical socket mount - - 80
Weight -2.0- g
-0.07- oz.
Marking device Case style TO-263AB (D2PAK) HFA16TB120S
VS-HFA16TB120SPbF
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Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
02468
0.1
1
100
10 TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
IR - Reverse Current (μA)
VR - Reverse Voltage (V)
0200 800400 1000600 1200
0.01
0.1
1
10
100
1000
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
1 10 100 10 0001000
1
1000
100
10
TJ = 25 °C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 100110
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Response
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
PDM
t2
t1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-HFA16TB120SPbF
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Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
(Per Leg)
Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg)
Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg)
t
rr
(ns)
dI
F
/dt (A/μs)
100 1000
20
270
70
170
120
220
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
Irr (A)
dIF/dt (A/µs)
100 1000
0
30
25
20
5
10
15
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
Qrr (nC)
dIF/dt (A/μs)
100 1000
0
1600
800
1200
1000
1400
200
400
600
VR = 200 V
TJ = 125 °C
TJ = 25 °C
IF = 16 A
IF = 8 A
dI(rec)M/dt (A/μs)
dIF/dt (A/μs)
100 1000
10
10 000
100
1000 IF = 16 A
IF = 8 A
VR = 200 V
TJ = 125 °C
TJ = 25 °C
VS-HFA16TB120SPbF
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Revision: 26-Feb-16 5Document Number: 94594
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Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-HFA16TB120SPbF
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Revision: 26-Feb-16 6Document Number: 94594
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-HFA16TB120SPBF 50 1000 Antistatic plastic tube
VS-HFA16TB120STRRP 800 800 13" diameter reel
VS-HFA16TB120STRLP 800 800 13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95054
Packaging information www.vishay.com/doc?95032
2- HEXFRED
®
family
1- Vishay Semiconductors product
3- Process designator: A = electron irradiated
4- Current rating (16 = 16 A)
5- Package outline (TB = TO-220, 2 leads)
6- Voltage rating (120 = 1200 V)
7- S = D
2
PAK
Device code
51 32 4 6 7 8 9
VS- HF A 16 TB 120 S TRL PbF
-
•
PbF = lead (Pb)-free, for tube packaged
9
8
•
TRL = tape and reel (left oriented)
•
TRR = tape and reel (right oriented)
-
•
None = tube
•
P = lead (Pb)-free, for tape and reel packaged
Outline Dimensions
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D2PAK
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004 B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c) c1
Base
Metal
Plating
Conforms to JEDEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010 AB
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Legal Disclaimer Notice
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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