Hardware
Documentation
Linear Hall-Effect Sensor
with PWM Output
HAL® 2850
Edition July 25, 2013
DSH000160_002EN
Data Sheet
HAL 2850 DATA SHEET
2July 25, 2013; DSH000160_002EN Micronas
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume respon-
sibility for patent infringements or other rights of third
parties which may result from its use. Commercial con-
ditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues.
Micronas reserves the right to review this document
and to make changes to the document’s content at any
time without obligation to notify any person or entity of
such revision or changes. For further advice please
contact us directly.
Do not use our products in life-supporting systems,
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explicitly agreed to otherwise in writing between the
parties, Micronas’ products are not designed, intended
or authorized for use as components in systems
intended for surgical implants into the body, or other
applications intended to support or sustain life, or for
any other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photo-
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without the express written consent of Micronas.
Micronas Trademarks
–HAL
–varioHAL
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Contents
Page Section Title
Micronas July 25, 2013; DSH000160_002EN 3
DATA SHEET HAL 2850
5 1. Introduction
51.1.Features
5 1.2. Major Applications
6 2. Ordering Information
6 2.1. Marking Code
6 2.2. Operating Junction Temperature Range (TJ)
6 2.3. Hall Sensor Package Codes
7 3. Functional Description
7 3.1. General Function
8 3.2. Digital Signal Processing
9 3.2.1. Temperature Compensation
10 3.2.2. DSP Configuration Registers
11 3.3. Power-on Self Test (POST)
11 3.3.1. Description of POST Implementation
11 3.3.2. RAM Test
11 3.3.3. ROM Test
11 3.3.4. EEPROM Test
11 3.4. Sensor Behavior in Case of External Errors
12 3.5. Detection of Signal Path Errors
13 4. Specifications
13 4.1. Outline Dimensions
17 4.2. Soldering, Welding and Assembly
17 4.3. Pin Connections and Short Descriptions
17 4.4. Dimensions of Sensitive Area
17 4.5. Positions of Sensitive Area
18 4.6. Absolute Maximum Ratings
18 4.6.1. Storage and Shelf Life
19 4.7. Recommended Operating Conditions
19 4.8. Characteristics
21 4.9. Magnetic Characteristics
22 4.9.1. Definition of Sensitivity Error ES
23 5. The PWM Module
25 5.1. Programmable PWM Parameter
28 6. Programming of the Sensor
28 6.1. Programming Interface
29 6.2. Programming Environment and Tools
29 6.3. Programming Information
30 7. Application Note
30 7.1. Ambient Temperature
30 7.2. EMC and ESD
30 7.3. Output Description
30 7.3.1. How to Measure PWM Output Signal
31 7.4. Application Circuit
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 5
Linear Hall-Effect Sensor with PWM Output
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 2850 is a member of the Micronas family of
programmable linear Hall-effect sensors.
The HAL 2850 features a temperature-compensated
Hall plate with spinning current offset compensation,
an A/D converter, digital signal processing, an
EEPROM memory with redundancy and lock function
for the calibration data, and protection devices at all
pins. The internal digital signal processing is of great
benefit because analog offsets, temperature shifts,
and mechanical stress do not degrade digital signals.
The easy programmability allows a 2-point calibration
by adjusting the output signal directly to the input sig-
nal (like mechanical angle, distance, or current). Indi-
vidual adjustment of each sensor during the cus-
tomer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be com-
pensated in the final assembly.
In addition, the temperature-compensation of the Hall
IC can be fit to all common magnetic materials by pro-
gramming first- and second-order temperature coeffi-
cients of the Hall sensor sensitivity. It is also possible
to compensate offset drifts over temperature gener-
ated by the customer application with a first-order tem-
perature coefficient of the sensor offset. This enables
operation over the full temperature range with high
accuracy.
For programming purposes, the sensor features a pro-
gramming interface with a Biphase-M protocol on the
DIO pin (output).
In the application mode, the sensor provides a continu-
ous PWM signal.
1.1. Features
– High-precision linear Hall-effect sensor
– Spinning current offset compensation
– 20 bit digital signal processing
– ESD protection at DIO pin
– Reverse voltage and ESD protection at VSUP pin
– Various sensor parameter are programmable (like
offset, sensitivity, temperature coefficients, etc.)
– Non-volatile memory with redundancy and lock
function
– Programmable temperature compensation for sensi-
tivity (2nd order) and offset (1st order)
– PWM frequency programmable from 31.25 Hz up to
2kHz
– PWM resolution between 11 bit and 16 bit depend-
ing on the PWM frequency
– The magnetic measurement range over tempera-
ture is adjustable from 24 mT up to 96 mT
– On-board diagnostics (overvoltage, output current,
overtemperature, signal path overflow)
– Power-on self-test covering all memories
– Biphase-M interface (programming mode)
– Sample accurate transmission for certain periods
(Each PWM period transmits a new Hall sample)
– Digital readout of temperature and magnetic field
information in calibration mode
– Open-drain output with slew rate control (load inde-
pendent)
– Programming and operation of multiple sensors at
the same supply line
– High immunity against mechanical stress, ESD, and
EMC
1.2. Major Applications
– Contactless potentiometers
– Angular measurements
(e.g.; torque force, pedal position, suspension level,
headlight adjustment; or valve position)
– Linear position
– Current sensing for motor control, battery manage-
ment
HAL 2850 DATA SHEET
6July 25, 2013; DSH000160_002EN Micronas
2. Ordering Information
2.1. Marking Code
The HAL 2850 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
2.2. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature range TJ).
A: TJ = 40 °C to +170 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 7.1.
on page 30.
2.3. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors:
Ordering Codes”.
Type Temperature
Range
A
HAL2850 2850
HALXXXXPA-T
Temperature Range: A
Package:UT for TO92UT -1/-2
Type: 2850
Example: HAL2850UT-A
Type: 2850
Package: TO92UT-1/-2
Temperature Range: TJ = 40 C to +170 C
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 7
3. Functional Description
3.1. General Function
The HAL 2850 is a monolithic integrated circuit, which
provides an output signal proportional to the magnetic
flux through the Hall plate.
The external magnetic field component, perpendicular
to the branded side of the package, generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the digital signal processing Unit
(DSP) according to the settings of the EEPROM regis-
ters.
The function and the parameters for the DSP are
explained in Section 3.2. on page 8.
Internal temperature compensation circuitry and the
spinning current offset compensation enables opera-
tion over the full temperature range with minimal
changes in accuracy and high offset stability. The cir-
cuitry also rejects offset shifts due to mechanical
stress from the package.
The HAL 2850 provides two operation modes, the
application mode and the programming mode.
Application Mode
The output signal is provided as continuous PWM
signal.
Programming Mode
For the programming of the sensor parameters, a
Biphase-M protocol is used.
The HAL 2850 provides non-volatile memory which is
divided in different blocks. The first block is used for
the configuration of the digital signal processing, the
second one is used to configure the PWM module. The
non-volatile memory employs inherent redundancy.
Fig. 3–1: HAL 2850 block diagram
Internally
Temperature
Oscillator
Switched A/D Digital DIO
VSUP
GND
EEPROM Memory
Lock Control
Stabilized
Supply and
Protection
Devices
Dependent
Bias
Protection
Devices
Hall Plate Converter Signal
Processing
PWM
Module
Temperature A/D
Sensor Converter
with Slew
Control
Programming
Interface
Open Drain
Output
HAL 2850 DATA SHEET
8July 25, 2013; DSH000160_002EN Micronas
3.2. Digital Signal Processing
All parameters and the values y, yTCI are normalized to
the interval (1, 1) which represents the full scale mag-
netic range as programmed in the RANGE register.
Example for 40 mT Range
1 equals 40 mT
+1 equals +40 mT
For the definition of the register values, please refer to
Section 3.2.2. on page 10
The digital signal processing (DSP) is the major part of
the sensor and performs the signal conditioning. The
parameters of the DSP are stored in the DSP CONFIG
area of the EEPROM.
The device provides a digital temperature compensa-
tion. It consists of the internal temperature compensa-
tion, the customer temperature compensation, as well
as an offset and sensitivity adjustment. The internal
temperature compensation (factory compensation)
eliminates the temperature drift of the Hall sensor
itself. The customer temperature compensation is cal-
culated after the internal temperature drift has been
compensated. Thus, the customer has not to take care
about the sensor’s internal temperature drift.
The output value y is calculated out of the factory-com-
pensated Hall value yTCI as:
Parameter d is representing the offset and c is the
coefficient for sensitivity.
The current Hall value y is stored in the data register
HVD immediately after it has been temperature com-
pensated.
A new PWM period transmits the recent temperature-
compensated Hall sample. A new Hall sample is trans-
mitted by the next PWM period and samples will nei-
ther be lost nor doubly transmitted. Sample accurate
transmission is available for native PWM periods
(0.512 ms, 1.024 ms, 2.048 ms, 4.096 ms, 8.192 ms,
16.384 ms and 32.768 ms period).
Fig. 3–2: Block diagram of digital signal path
yy
TCI d TVAL+cTVAL=
internal temp.
A
D
T (temp.)
comp.
custom. temp.
comp.
offset & sens.
adjustm.
A
D
ByTCI y
TVAL
PWM
PWMDTY
limiter
D
PWM
polarity
OP
PERIOD
MDC
HVD
31 to 2000 Hz
Note: HVAL is stored in HVD register
16
R
PERIOD[4:0]
R
12 to 16 bit
I/O
logic
SR
PWMMIN
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 9
3.2.1. Temperature Compensation
Terminology:
D0: name of the register or register value
d0: name of the parameter
The customer programmable parameters “c” (sensitiv-
ity) and d (offset) are polynomials of the temperature.
The temperature is represented by the adjusted read-
out value TVAL of a built-in temperature sensor.
The update rate of the temperature value TVAL is less
than 100 ms.
The sensitivity polynomial c(TVAL) is of second order
in temperature:
For the definition of the polynomial coefficients please
refer to Section 3.2.2. on page 10.
The Offset polynomial d(TADJ) is linear in temperature:
For the definition of the polynomial coefficients, please
refer to Section 3.2.2. on page 10.
For the calibration procedure of the sensor in the sys-
tem environment, the two values HVAL and TADJ are
provided. These values are stored in volatile registers.
HVAL
The number HVAL represents the digital output value y
which is proportional to the applied magnetic field.
HVAL is a 16-bit two’s complement binary ranging from
32768 to 32767.
It is stored in the HVD register.
In case of internal overflows, the output will clamp to
the maximum or minimum HVAL value.
Please take care that during calibration, the output sig-
nal range does not reach the maximum/minimum
value.
TVAL
The number TVAL provides the adjusted value of the
built-in temperature sensor.
TVAL is a 16-bit two’s complement binary ranging from
32768 to 32767.
It is stored in the TVD register.
Note: The actual resolution of the temperature sensor
is 12 bit. The 16-bit representation avoids
rounding errors in the computation.
The relation between TVAL and the junction tempera-
ture TJ is
cTVALc0c1TVAL c2TVAL2
++=
dTVALd0d1TVAL+=
yHVAL
32768
----------------=
Table 3–1: Relation between TJ and TADJ (typical
values)
Coefficient Value Unit
071.65 °C
11 / 231.56 °C
TJ0TVAL+1
=
HAL 2850 DATA SHEET
10 July 25, 2013; DSH000160_002EN Micronas
3.2.2. DSP Configuration Registers
This section describes the function of the DSP configu-
ration registers. For details on the EEPROM please
refer to Application Note Programming of HAL 2850.
Magnetic Range: RANGE
The RANGE register defines the magnetic range of the
A/D converter. The RANGE register has to be set
according to the applied magnetic field range.
For calculation of magnetic measurement range over
temperature see Section 4.9. on page 21 parameter
RANGEabs. The minimum value has to be used in
order to guarantee no clipping over temperature.
Magnetic Offset D
The D (offset) registers contain the parameters for the
adder in the DSP. The added value is a first order poly-
nomial of the temperature.
D0 Register
D0 is encoded as two’s complement binary.
D1 Register
D1 is encoded as two’s complement binary.
Magnetic Sensitivity C
The C (sensitivity) registers contain the parameters for
the multiplier in the DSP. The multiplication factor is a
second order polynomial of the temperature.
C0 Register
C0 is encoded as two’s complement binary:
C1 Register
C1 is encoded as two’s complement binary.
EEPROM.
RANGE
Nominal Range
0 reserved
140mT
260mT
380mT
4100mT
5120mT
6140mT
7160mT
Table 3–2: Temperature independent coefficient
Parameter Range Resolution
d00.5508 ... 0.5497 10 bit
D0 512 ... 511
d0
0.5508
512
---------------- D0=
Table 3–3: Linear temperature coefficient
Parameter Range Resolution
d13.076 x 106 ... 3.028 x 106 7bit
D1 64 ... 63
Table 3–4: Temperature independent coefficient
Parameter Range Resolution
c02.0810 ... 2.2696 12 bit
C0 2048 ... 2047
Table 3–5: Linear temperature coefficient
Parameter Range Resolution
c17.955 x 106... 1.951 x 1059bit
C1 256 ... 255
d1
0.1008
64
---------------- D1 3.0518 10 5–
=
c0
2.1758
2048
---------------- C0 89.261+=
c1
0.4509
256
---------------- C1 108.0+3.0518 10 5–
=
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 11
C2 Register
C2 is encoded as two’s complement binary.
3.3. Power-on Self Test (POST)
The HAL 2850 features a built-in power-on self test to
support in system start-up test to enhanced the sys-
tem failure detection possibilities.
The power-on self test comprises the following sensor
blocks:
–RAM
–ROM
– EEPROM
The power-on self test can be activated by setting cer-
tain bits in the sensors EEPROM.
Table 3–7: Power-On Self Test Modes
3.3.1. Description of POST Implementation
HAL 2850 starts the internal POST as soon as the
external supply voltage reaches the minimum supply
voltage (VSUPon). The sensor output is disabled during
the POST. It is enabled after the POST has been fin-
ished (after tstartup).
A failed POST is immediately setting the PWM output
to the minimum duty cycle.
3.3.2. RAM Test
The RAM test consists of an address test and an RAM
cell test. The address test checks if each byte of the
RAM can be singly accessed. The RAM cell test
checks if the RAM cells are capable of holding both 0
and 1.
3.3.3. ROM Test
The ROM test consists of a checksum algorithm. The
checksum is calculated by a byte by byte summation of
the entire ROM. The 8-bit checksum value is stored in
the ROM.
The checksum is calculated at the ROM test using the
entire ROM and is then compared with the stored
checksum. An error will be indicated in case that there
is a difference between stored and calculated check-
sum.
3.3.4. EEPROM Test
The EEPROM test is similar to the ROM test. The only
difference is that the checksum is calculated for the
EEPROM memory and that the 8-bit checksum is
stored in one register of the EEPROM.
3.4. Sensor Behavior in Case of External Errors
HAL 2850 shows the following behavior in case of
external errors:
– Short of output against VSUP: The sensor output is
switched off (high impedance) when an over current
occurs in the DIO output. It is re enabled before or
while the next low pulse of the PWM signal is trans-
mitted.Therefore the ECU must discard the first ris-
ing edge after a disturbance has occurred. The ECU
has to identify destroyed PWM periods by evaluat-
ing the period time
– Break of VSUP or GND line: A sensor with open-
drain output and digital interface does not need a
wire-break detection logic. The wire-break function
is covered by the pull-up resistor on the receiver.
Assuming a pull-up resistor in the receiver 100%
duty-cycle (output always high) indicates a GND or
VSUP line break. This error can be detected one
period after its occurrence
– Under or over voltage: The sensor output is
switched off (high impedance) after under or over
voltage has been detected by the sensor
– Over temperature detection: The sensor output is
switched off (high impedance) after a too high tem-
perature has been detected by the sensor
(typ.180°C). It is switched on again after the chip
temperature has reached a normal level. A build in
hysteresis avoids oscillation of the output (typ. 25°C)
Table 3–6: Quadratic temperature coefficient
Parameter Range Resolution
c21.87 x 1010... 1.86 x 1010 8bit
C2 128 ... 127
EEPROM.
POST
Mode / Function
[1] [0]
0 0 POST disabled.
0 1 Memory test enabled (RAM, ROM,
EEPROM).
c2
0.2008
128
---------------- C2 9.3132 10 10–
=
HAL 2850 DATA SHEET
12 July 25, 2013; DSH000160_002EN Micronas
3.5. Detection of Signal Path Errors
HAL 2850 can detect the following overflows within the
signal path:
– A positive overflow of the A/D converter, a positive
overflow within the calculation of the low pass filter
or the temperature compensation will set the PWM
output to maximum duty cycle
– A negative overflow of the A/D converter, a negative
overflow within the calculation of the low pass filter
or the temperature compensation will set the PWM
output to minimum duty cycle
– A positive or negative overflow of the A/D converter
of the temperature sensor or a positive/negative
overflow within the calculation of the calibrated tem-
perature value sets the PWM output to minimum-
duty-cycle
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 13
4. Specifications
4.1. Outline Dimensions
Fig. 4–1:
TO92UT-1 Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
© Copyright 2007 Micronas GmbH, all rights reserved
ISSUE DATE
YY-MM-DD
ITEM NO.
solderability is guaranteed between end of pin and distance F1.
A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet.
-
JEDEC STANDARD
ISSUE
UNIT
mm
A2
1.55
1.45
A3
0.7
ANSI
- 10-04-29
0.36
b
0.42
cD1
4.05
E1
4.11
4.01
e
2.54
F1
1.2
0.8
5 mm
06609.0001.4
DRAWING-NO.
ZG001009_Ver.07
ZG-NO.
L1
14.0
min
F3F2
0.60
0.42
4.0
2.0
L
14.5
min
0
scale
Θ
45°
2.5
A2
c
D1
L
e
Θ
1 2
F2
L1
b
F3
3
F1
E1
y
Center of sensitive area
Bd A3
A4
physical dimensions do not include moldflash.
min/max of D1 are specified in the datasheet.
Sn-thickness might be reduced by mechanical handling.
HAL 2850 DATA SHEET
14 July 25, 2013; DSH000160_002EN Micronas
Fig. 4–2:
TO92UT-2 Plastic Transistor Standard UT package, 3 leads
Weight approximately 0.12 g
Θ
DRAWING-NO.
06615.0001.4
solderability is guaranteed between end of pin and distance F1.
A4, Bd, y= these dimensions are different for each sensor type and are specified in the data sheet.
0.36mm 1.55
1.45 0.7 0.42
JEDEC STANDARD
ISSUE
-
ITEM NO.
-
A3UNIT A2 bc
4.05 4.11
4.01
1.2
0.8
0.60
0.42
1.27 14.5
min
ANSI
10-04-29
ISSUE DATE
YY-MM-DD
D1 e E1 F2F1 L
45°
ZG-NO.
ZG001015_Ver.07
2.50
Θ
scale
5 mm
D1
L
eb
F2
123
F1
c
Bd
Center of sensitive area
E1
y
A4
A2
A3
physical dimensions do not include moldflash.
min/max of D1 are specified in the datasheet.
Sn-thickness might be reduced by mechanical handling.
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 15
Fig. 4–3:
TO92UA/UT: Dimensions ammopack inline, not spread
HAL 2850 DATA SHEET
16 July 25, 2013; DSH000160_002EN Micronas
Fig. 4–4:
TO92UA/UT: Dimensions ammopack inline, spread
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 17
4.2. Soldering, Welding and Assembly
Please check the Micronas Document “Guidelines for the Assembly of HAL Packages” for further information about
solderability, welding and assembly, and second-level packaging. The document is available on the Micronas web-
site or on the service portal.
4.3. Pin Connections and Short Descriptions
Fig. 4–5: Pin configuration
4.4. Dimensions of Sensitive Area
0.213 mm x 0.213 mm
4.5. Positions of Sensitive Area
Pin
No.
Pin Name Type Short Description
1 VSUP Supply Voltage
2 GND Ground
3 DIO IN/
OUT
Digital IO
PWM Output
1VSUP
2GND
3DIO
TO92UT-1/-2
A4 0.4 mm
Bd 0.3 mm
D1 4.05 0.05 mm
H1 min. 22.0 mm, max. 24.1 mm
y 1.55 mm nominal
HAL 2850 DATA SHEET
18 July 25, 2013; DSH000160_002EN Micronas
4.6. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this high-impedance circuit.
All voltages listed are referenced to ground (GND).
4.6.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for two years from the date code on the package.
Symbol Parameter Pin Name Min. Max. Unit Comment
TJJunction Operating Temperature 40 1901) C not additive
VSUP Supply Voltage VSUP 18 26.5 2)
40 3) V
V
not additive
not additive
VDIO IO Voltage DIO 0.5 26.5 2) V not additive
Bmax Magnetic field unlimited T
VESD ESD Protection VSUP, DIO 8.04) 8.04) kV
1) for 96h. Please contact Micronas for other temperature requirements
2) t < 5 min.
3) t < 5 x 500 ms
4) AEC-Q100-002 (100 pF and 1.5 k)
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 19
4.7. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-
tics” is not implied and may result in unpredictable behavior, reduce reliability and lifetime of the device.
All voltages listed are referenced to ground (GND).
4.8. Characteristics
at TJ = 40 °C to +170 °C (for temperature type A), VSUP = 4.5 V to 17 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column Conditions.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V..
Symbol Parameter Pin Name Min. Max. Unit Remarks
VSUP Supply Voltage VSUP 4.5 17 V
VDIO Output Voltage DIO 0 18 V
IOUT Continuous Output Current DIO 20 mA for VDIO = 0.6 V
VPull-Up Pull-Up Voltage DIO 3.0 18 V In typical applications
VPull-Up, max = 5.5 V
RPull-Up Pull-Up Resistor DIO (see Section 7.4. on page 31)
1) Depends on the temperature profile of the application. Please contact Micronas for life time calculations.
CLLoad Capacitance DIO 180 (see
Section 7
.4. on
page 31)
pF
NPRG Number of EEPROM
Programming Cycles
100 cycles 0 °C < Tamb < 55 °C
TJJunction Operating
Temperature1) 40
40
40
125
150
170
°C
°C
°C
for 8000h (not additive)
for 2000h (not additive)
< 1000h (not additive)
1) Depends on the temperature profile of the application. Please contact Micronas for life time calculations.
Symbol Parameter Pin Name Min. Typ. Max. Unit Conditions
ISUP Supply Current VSUP 12 19 mA
IDIOH Output Leakage Current DIO 10 µA
Digital I/O (DIO) Pin
VOL Output Low Voltage DIO
0.6
0.2
0.09
VI
OL = 20 mA
IOL = 5 mA
IOL = 2.2 mA
TPERIOD PWM Period DIO 0.5 32 ms Customer programmable
(see Table on page 25)
DUTYRange Available Duty-Cycle Range DIO 0.78 99.22 % Min. and max. values
depend on MDC register
setting.
Output Resolution DIO 16 bit Depending on selected
PWM period and slew rate
HAL 2850 DATA SHEET
20 July 25, 2013; DSH000160_002EN Micronas
V/tfall Falling Edge Slew Rate DIO 1.4 2 2.6 V/µs SLEW = 2
Measured between 70%
and 30%, VPull-Up = 5 V,
RPull-UP = 1 k, CL = 470 nF
4.9 7 10.4 SLEW = 1
Measured between 70%
and 30%, VPull-Up = 5 V,
RPull-UP = 510 , CL = 220
pF
25 SLEW = 0
Measured between 30%
and 70%, VPull-Up = 5 V,
RPull-UP = 510 , CL = 220
pF
V/trise_max Max. Rising Edge Slew Rate DIO 1.4 2 2.6 V/µs SLEW = 2
Measured between 30%
and 70%, VPull-Up = 5 V,
RPull-UP = 1 k, CL = 470 nF
3.8 7 10.4 SLEW = 1
Measured between 30%
and 70%, VPull-Up = 5 V,
RPull-UP=510 , CL=220 pF
25 SLEW = 0
Measured between 30%
and 70%, VPull-Up = 5 V,
RPull-UP=510 , CL=220 pF
tstartup Power-Up Time (time to reach
stabilized output duty cycle)
DIO Depends on customer
programming.
Please see (see Table 5–1
on page 24)
ms
fOSC16 Internal Frequency of 16 MHz
Oscillator
16 MHz
VSUPon Power-On Reset Level VSUP 3.7 4.15 4.45 V
VSUPonHyst Power-On Reset Level
Hysteresis
VSUP 0.1 V
VSUPOV Supply Over Voltage Reset
Level
VSUP 17 19.5 21 V
VSUPOVHyst Supply Over Voltage Reset
Level Hysteresis
VSUP 0.4 V
Outnoise Output noise (rms) DIO 12LSB
12 B = 0 mT, 100 mT range,
0.5 ms PWM period,
TJ = 25 °C
TO92UT Package
Rthja
Rthjc
Rthjs
Thermal resistance
Junction to Ambient
Junction to Case
Junction to Solder Point
235
61
128
K/W
K/W
K/W
measured on 1s0p board
measured on 1s0p board
measured on 1s1p board
Symbol Parameter Pin Name Min. Typ. Max. Unit Conditions
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 21
4.9. Magnetic Characteristics
at TJ = 40 °C to +170 °C, VSUP = 4.5 V to 17 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column Conditions.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol Parameter Pin Name Min. Typ. Max. Unit Conditions
RANGEABS Absolute Magnetic Range of
A/D Converter
60 100 110 % % of nominal RANGE
Nominal RANGE
programmable from
40 mT up to 160 mT
INL Full Scale Non-Linearity DIO 0.25 0 0.25 % of full-scale
RANGE = 1 (40 mT)
0.15 0 0.15 % of full-scale
RANGE 2 (60 mT)
ES Sensitivity Error over Junction
Temperature Range
DIO 1 0 1 % (see Section 4.9.1.)
BOFFSET Magnetic Offset DIO 0.4 0 0.4 mT B = 0 mT, TA = 25 °C
RANGE 80 mT
BOFFSET Magnetic Offset Drift over
Temperature Range
BOFFSET(T) BOFFSET(25 °C)
DIO 50 5 T/°C B = 0 mT
RANGE 80 mT
HAL 2850 DATA SHEET
22 July 25, 2013; DSH000160_002EN Micronas
4.9.1. Definition of Sensitivity Error ES
ES is the maximum of the absolute value of 1 minus
the quotient of the normalized measured value1) over
the normalized ideal linear2) value:
In the example shown in Fig. 4–6 on page 22 the max-
imum error occurs at 10 °C:
Fig. 4–6: Definition of sensitivity error (ES)
1) normalized to achieve a least-square-fit straight-line
that has a value of 1 at 25 °C
2) normalized to achieve a value of 1 at 25 °C
ES max abs meas
ideal
------------1–
TJmin, TJmax
=
ES 1.001
0.993
------------- 1–0.8%==
50 75 100 125 150 175
25
0
–25
–50
0.98
0.99
1.00
1.01
1.02
1.03
-10
0.993
1.001
junction temperature [°C]
relative sensitivity related to 25 °C value
ideal 200 ppm/k
least-square-fit straight-line of
normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-square-fit
straight-line at 25 °C
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 23
5. The PWM Module
The HAL 2850 transmits the magnetic field information
by sending a PWM signal.
A pulse width modulated (PWM) signal consists of
successive square wave pulses. The information is
coded in the ratio between high time “thigh” and low
time “tlow”.
Table 5–1 describes the PWM interface timing.
After reset, the output is recessive high. The transmis-
sion starts after the first valid Hall value has been cal-
culated. In case of an overcurrent in the DIO output,
the transmit transistor is switched off (high imped-
ance). The transistor is re-enabled before transmitting
a new pulse.
The first PWM period after a reset or an overcurrent
condition cannot be captured due to no edge at the
beginning of the transmission.
The PWM signal can be configured by the EEPROM
bits PERIOD, PERIOD_ADJ (Trimming of native PWM
periods), MDC (minimum/maximum duty cycle), SR
(slew rate) and OP (output polarity) (see Section 5.1.
on page 25).
The native PWM periods can be set by the EEPROM
bit field PERIOD. Native PWM periods are 0.512 ms,
1.024 ms,, 16.384 ms and 32.768 ms (see Table on
page 25).
The EEPROM field PERIOD_ADJ can be used to trim
the PWM period in small steps. This feature enables
variable PWM periods in between the natural periods
(see Table on page 25).
The output polarity can be configured by the flag OP in
the EEPROM. According to the OP value, a PWM
period starts either with a high pulse (OP = 0) or with a
low pulse (OP = 1). Please note that if OP is set to 1,
the output is recessive high until the output has been
enabled (tOE has been elapsed). After the output has
been enabled, it remains low until the transition within
the first period (see Fig. 5–2).
The slew rate can be configured by the bits SR in the
EEPROM. See Table 5–1 for selectable slew rates.
Note: Please consider at which edge a new period
starts. When OP is set to zero, a new period
starts with the rising edge and the period must
be captured by triggering the rising edge.
Fig. 5–1: PWM interface startup timing
duty cycle thigh
tperiod
---------------=
VSUP
DIO
tperiod
thigh tlow
tperiod
thigh
t
low
tstartup
HAL 2850 DATA SHEET
24 July 25, 2013; DSH000160_002EN Micronas
Fig. 5–2: PWM interface startup timing for inverted output
VSUP
DIO
tperiod
thigh tlow
tperiod
thigh tlow
tstartup
tOE
Table 5–1: PWM interface timing
Symbol Parameter Min. Typ. Max. Unit Remark
tstartup Startup Time1) 8
9
10
10
20
40
80
ms
ms
ms
ms
ms
ms
ms
Period = 0.5 ms
Period = 1 ms
Period = 2 ms
Period = 4 ms
Period = 8 ms
Period = 16 ms
Period = 32 ms
tOE Output Enable Time 60 1502) µs
PWMJitter PWM Period Sample to
Sample Jitter (RMS)
30 60 ns Period = 0.5 ms
DUTYJitter PWM Duty Cycle Sample
to Sample Jitter (RMS)
63 125 ns Period = 0.5, 100 mT RANGE,
B = 0 mT, including noise
tperiod PWM Period see Fig. 5–1 and Fig. 5–2 PWM period is customer pro-
grammable
DUTY PWM High Duty Cycle thigh / tperiod %
1) Values are valid for deactivated power-on self test. 10 ms must be added when power-on self test is active.
2) 10 ms must be added when power-on self test is active.
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 25
5.1. Programmable PWM Parameter
PWM Periods
Note: When the period is trimmed with the PERIOD_ADJ register, then either the measurable magnetic range is
reduced or the resolution is reduced.
The PWM period is faster than the sample rate when PERIOD_ADJ is greater than 0. Aliasing may occur due
to double transmitted samples.
Table 5–2: Supported native PWM periods
PWM
Period
Sample
Frequency
PERIOD
Bit No.
Typ. [4:2] [1] [0]
[ms] [Hz]
0.512 1953 0 0 0
1.024 977 0 0 1
2.048 488 0 1 1
4.096 244 1 1 1
8.192 122 2 1 1
16.384 61 3 1 1
32.768 31 4 1 1
Table 5–3: Supported intermediate PWM period
EEPROM.PERIOD
Period
steps
max. Period, PERIOD_ADJ = 0 min. Period, PERIOD_ADJ = 255
PWM
period
resolution
C0 for full
magnetic
range,
MDC=0
magnetic
range for
C0 = 1,
MDC=0
PWM
period
resolution
C0 for full
magnetic
range,
MDC=0
magnetic
range for
C0 = 1,
MDC=0
[LSB] [µs] [ms] [LSB] [%] [ms] [LSB] [%]
0 1 0.512 12 0.9375 93.75 0.257 11 0.4395 43.95
1 2 1.024 13 0.9688 96.88 0.514 12 0.4707 47.07
3 4 2.048 14 0.9844 98.44 1.028 13 0.4863 48.63
7 8 4.096 15 0.9922 99.22 2.056 14 0.4941 49.41
11 16 8.192 16 0.9961 99.61 4.112 15 0.4980 49.80
15 32 16.384 16 0.9961 99.61 8.224 15 0.4980 49.80
19 64 32.768 16 0.9961 99.61 16.448 15 0.4980 49.80
HAL 2850 DATA SHEET
26 July 25, 2013; DSH000160_002EN Micronas
Minimum Duty Cycle
The minimum and maximum duty cycle is symmetrical
to 50% duty cycle. The MDC register acts on the mini-
mum and maximum duty cycle. The minimum and
maximum duty cycle depend on the output slew rates
and the PWM period (see Table 5–4).
The minimum/maximum duty cycle can be calculated
with the following equations:
PWMPER16 = 216 (PERIOD_ADJ x 27)
PWMMIN = (1 + MDC) x 29
PWMMAX = PWMPER16 PWMMIN
PWMPERIOD = trunc(PWMPER16 / 2(16-R))
Definition:
R: PWM resolution in LSB
(see Table )
PWMMIN: minimum high time in LSB
PWMMAX: maximum low time in LSB
PWMPERIOD: PWM period in LSB
PWMPER16: PWM period in LSB for 16 bit
resolution
MDC: EEPROM value for adjusting
min./max. duty cycle
PERIOD_ADJ: EEPROM value for adjusting the
period
The measured high duty cycle (DUTY) may differ from
the internal high duty cycle (DUTYi) due of internal
delays within the output logic, a difference between the
rising and falling slope time, the threshold voltage of
the external receiver; and other effects.
Setting the clamping levels reduces the measurable
magnetic range (C0 = 1). The full magnetic range can
be used in case the slope coefficient C0 is used for
compressing the range of HVAL.
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 27
Two options are available:
1. Use full magnetic range with a reduced resolution or
2. full resolution with a reduced magnetic range.
The full magnetic range can be addressed by using the
equations below.
C0 = Ctarget/Cmeasured
Ctarget: Target output sensitivity
CmeasuredMeasured output sensitivity for default
settings
Example: Ctarget = 40% / 60 mT
Cmeasured = 30% / 60 mT
C0 = 0.667%/mT / 0.5%/mT = 1.334
Table 5–4: PWM period (PERIOD), slew rate (SR) and minimum duty cycle (MDC)
Period Slew Rate VPULL-UP PWMmin @ R min. Duty Cycle Rec. Limit
typ. typ. max. min.
(MDC=0)
max.
(MDC=31)
min. max. min.
duty cycle
MDC
[µs] [V/µs] [V] [LSB] [LSB] [%] [%] [%] [LSB]
512 infinite (> 25) 18 32 1024 0.78 25 0.78 1) 0
8 7 3.13 3
2 7 3.13 3
1024 infinite (> 25) 18 64 2048 0.78 1) 0
8 7 1.56 1
2 7 1.56 1
2048 infinite (> 25) 18 128 4096 0.78 0
87
27
4096 infinite (> 25) 18 256 8192 0.78 0
87
27
8192 infinite (> 25) 18 512 16384 0.78 0
87
27
16384 infinite (> 25) 18 512 16384 0.78 0
87
27
32768 infinite (> 25) 18 512 16384 0.78 0
87
27
1) An overcurrent may not be detected.
HAL 2850 DATA SHEET
28 July 25, 2013; DSH000160_002EN Micronas
6. Programming of the Sensor
HAL 2850 features two different customer modes. In
Application Mode the sensor is providing a continuos
PWM signal transmitting temperature compensated
magnetic field values. In Programming Mode it is pos-
sible to change the register settings of the sensor.
After power-up the sensor is always operating in the
Application Mode. It is switched to the Programming
Mode by a defined sequence on the sensor output pin.
6.1. Programming Interface
In Programming Mode the sensor is addressed by
modulating a serial telegram (BiPhase-M) with con-
stant bit time on the output pin. The sensor answers
with a modulation of the output voltage.
A logical “0” of the serial telegram is coded as no level
change within the bit time. A logical “1” is coded as a
level change of typically 50% of the bit time. After each
bit, a level change occurs (see Table 6–1).
The serial telegram is used to transmit the EEPROM
content, error codes and digital values of the magnetic
field or temperature from and to the sensor.
Fig. 6–1: Definition of logical 0 and 1 bit
A description of the communication protocol and the
programming of the sensor is available in a separate
document (Application Note Programming HAL 2850).
logical 0
or
tbbit tbbit
logical 1
or
tbbit tbbit
tbhb tbhb tbhb tbhb
Table 6–1: Biphase-M frame characteristics of the host
Symbol Parameter Min. Typ. Max. Unit Remark
tbbit (host) Biphase Bit Time 970 1024 1075 µs
tbhb (host) Biphase Half Bit Time 0.45 0.5 0.55 tbbit (host)
tbifsp (host) Biphase Interframe
Space
3tbbit (host)
VOUTL Voltage for Low Level 5.8 6.3 6.6 V
VOUTH Voltage for High Level 6.8 7.3 7.8 V
VSUPPRG Supply Voltage During
Programming
5.6 6.5 V
Table 6–2: Biphase-M frame characteristics of the sensor
Symbol Parameter Min. Typ. Max. Unit Remark
tbbit (sensor) Biphase Bit Time 820 1024 1225 µs
tbhb (sensor) Biphase Half Bit Time 0.5 tbbit (sensor)
tbresp Biphase Response
Time
15t
bbit (sensor)
Slew Rate 2 V/µs
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 29
6.2. Programming Environment and Tools
For the programming of HAL 2850 during product
development and also for production purposes a pro-
gramming tool including hardware and software is
available on request. It is recommended to use the
Micronas tool kit in order to easy the product develop-
ment. The details of programming sequences are also
available on request.
6.3. Programming Information
For production and qualification tests, it is mandatory
to set the LOCK bit after final adjustment and program-
ming of HAL 2850. The LOCK function is active after
the next power-up of the sensor.
The success of the LOCK process should be checked
by reading the status of the LOCK bit after locking and/
or by an analog check of the sensors output signal.
Electrostatic Discharge (ESD) may disturb the pro-
gramming pulses. Please take precautions against
ESD and check the sensors error flags.
HAL 2850 DATA SHEET
30 July 25, 2013; DSH000160_002EN Micronas
7. Application Note
7.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
At static conditions and continuous operation, the fol-
lowing equation applies:
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
ISUP and Rth, and the max. value for VSUP from the
application. The choice of the relevant RthJX-parameter
(Rthja, Rthjc, or Rthjs) depends on the way the device is
(thermally) coupled to its application environment.
For the HAL 2850 the junction temperature TJ is speci-
fied. The maximum ambient temperature TAmax can be
calculated as:
7.2. EMC and ESD
For applications that cause disturbances on the supply
line or radiated disturbances, a series resistor and a
capacitor are recommended. The series resistor and
the capacitor should be placed as closely as possible
to the Hall sensor.
Please contact Micronas for detailed investigation
reports with EMC and ESD results.
7.3. Output Description
7.3.1. How to Measure PWM Output Signal
The HAL 2850 codes the magnetic field information in
the duty cycle of a PWM signal. The duty cycle is
defined as the ratio between the high time “thigh” and
the period “tperiod” of the PWM signal (see Fig. 7–1).
Note: Please consider at which edge a new period
starts. When OP is set to zero, a new period
starts with the rising edge and the period must
be captured by triggering the rising edge.
Fig. 7–1: Definition of PWM signal
TJTAT+=
TISUP VSUP
RthJX
IDIO VDIO
RthJX
+=
TAmax TJmax T–=
VSUP
DIO
tperiod
thigh tlow
tperiod
thigh
t
low
tstartup
DATA SHEET HAL 2850
Micronas July 25, 2013; DSH000160_002EN 31
7.4. Application Circuit
Micronas recommends the following two application
circuits for the HAL 2850.
The first circuit is recommended when the sensor is
powered with 5 V supply (see Fig. 7–2).
The second circuit should be used for applications
connected directly to the car’s battery with a pull-up to
a 5 V line (see Fig. 7–3 on page 32).
To avoid noise on the controller input pin, it is recom-
mended to use only these two circuits.
Values of external components
CVSUP = 47 nF
CDIO = 180 pF
The maximum load capacitor and minimum resistor is
given by the following equation:
CL = CDIO + Cwire + CINPUT
RL = Rpull-up
RL (min.) = ( Vpull-up (max.) VDIOL (max.) ) / (IDIO (CL x
(V/tfall)
CL (max.) = 0.4 Vpull-up (min.) / ( RL (V/trise))
Rpull-up: Pull-up resistor between DIO and Vpull-up
CVSUP: Capacitance between the VSUP pin and GND
CDIO: EMC protection capacitance on the DIO pin
Cwire: Capacity of the wire
CINPUT: Input capacitance of the ECU
Vpull-up (max.): max. applied pull-up voltage,
must be lower than the value
specified in Section 4.7. on page 19
VDIOL (max.): max. DIO low voltage,
it is recommended to use the value
specified in Section 4.8. on page 19
IDIO: DIO current at VDIOL (max.)
V/trise: selected rising edge slew rate, the max.
value specified in Section 4.8.
must be used
V/tfall: selected falling edge slew rate, the max.
value specified in Section 4.8.
must be used
Example for Calculating RL and CL (max.)
The application operates at following conditions:
slew rate = 8 V/µs (typ.)
Vpull-up = 5.5 V (max.)
CL = 400 pF
Calculation:
RL (min.) = ( 5.5 V 0.8 V ) / (20 mA pF x 10.4 V/
µs) = 297 RL = 330
CL (max.) = 400 pF <= 0.4 4.5 V / ( 330 10.4 V/µs
) = 524 pF
=> The used CL is below the limit.
Fig. 7–2: Application circuit for 5 V supply
DIO
GND
VSUP
CVSUP
CDIO
INPUT
GND
CINPUT
HAL2850 ECU
Cwire Rpull-up
VBAT = Vpull-up
(typ. 5 V)
HAL 2850 DATA SHEET
32 July 25, 2013; DSH000160_002EN Micronas
Fig. 7–3: Application circuit for battery and 5 V pull-up voltage
Note: The external components needed to protect
against EMC and ESD may differ from the appli-
cation circuit shown and have to be determined
according to the needs of the application
specific environment.
DIO
GND
VSUP
CVSUP
CDIO
INPUT
GND
CINPUT
HAL2850 ECU
Cwire Rpull-up
VBAT = 12 V (typ.)
Vpull-up = 5 V (typ.)
HAL 2850 DATA SHEET
33 July 25, 2013; DSH000160_002EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
8. Data Sheet History
1. Advance Information: “HAL 2850 Linear Hall-Effect
Sensor with PWM Output”, Dec. 5, 2008,
AI000144_001EN. First release of the advance
information.
2. Advance Information: “HAL 2850 Linear Hall-Effect
Sensor with PWM Output”, March 24, 2010,
AI000144_002EN. Second release of the advance
information.
Major changes:
• Electrical characteristics
• Signal path width
3. Advance Information: “HAL 2850 Linear Hall-Effect
Sensor with PWM Output”, July 9, 2010,
AI000144_003EN. Third release of the advance
information.
Major changes:
• Electrical and Magnetic Characteristics
4. Data Sheet: “HAL 2850 Linear Hall-Effect Sensor
with PWM Output”, August 9, 2011,
DSH000160_001EN. First release of the data sheet.
Major changes:
• Power-on Self Test (POST) details
• Error detection and behavior
• TO92UT package drawings
• Electrical and magnetic characteristics
5. Data Sheet: “HAL 2850 Linear Hall-Effect Sensor
with PWM Output”, July 25, 2013,
DSH000160_002EN. Second release of the data
sheet. Major changes:
• Temperature type K removed
• Package drawings updated
• Magnetic Characteristics over Temperature
updated
• Power-on Self Test Coverage updated
