SUPPLEMENT
1/13/98 Publication# 21116 Rev: B Amendment/0
Issue Date: January 1998
Am29F010 Known Good Die
1 Megabi t (1 28 K x 8-Bit )
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■Single power supply opera tion
— 5.0 V ± 10% for read, erase, and program
operations
— Simplifies syst em-level power requirements
■High performance
— 9 0 or 12 0 ns maximu m acc e ss t ime
■Low power consumption
— 30 mA max a ctive read current
— 50 mA max program/erase current
—<25 µA typical standby current
■Flexible sector architecture
— Eight uni for m sec t or s
— Any combination of s ectors can be erased
— Supports full chip erase
■Sector protection
— Hardware-based feature that disables/re-
enables program and erase operations in any
comb ination of sectors
— Sector protecti on/u nprote ction can be
implemented using standard PROM
pro grammi n g eq uipm e nt
■Embe dded Algorithms
— Embedded Erase algorith m automatically
pr e-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
pr ograms and verifies data at speci fi ed address
■Minimum 100,000 program/erase cycles
guaranteed
■Compatible with JEDEC standards
— Pinout and software co mpatible with
single-power-supply flash
— Superior ina dvertent wri te pro tection
■Data Polling a nd Toggle Bits
— Provides a software method of detecting
prog ram or erase cycle completion
■Tested to datasheet sp ecifications at
temperature
■Qu ality and reliability levels equivalent to
standard pa ckaged components
2 Am29F010 Known Good Die 1/13/98
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F010 in Known Good Die (K GD) form is a 1
Mbit, 5.0 V olt-only Flash memory. AMD defines KGD as
standard product in die form, tested for functionality
and speed. AMD KGD products have the same reli-
ability and qu ality as AMD products in packaged for m.
Am29F010 Features
The Am29F010 device is organized as eight uniform
se cto rs of 16 K byt es ea ch for fl e xibl e e ras e c ap ab i lit y.
This device is designed to be programmed in-sys tem
with the standard sys tem 5.0 Volt VCC supply. A power
supply providing 12.0 Volt VPP is not required for
program or erase operations.
The Am29F010 in KGD form offers access times of 90
ns and 120 ns, allowing high speed microprocessors to
oper ate wit hout wait states. To elimi nate bus conten-
tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE) controls.
The device requires only a single 5.0 volt power sup-
ply for bo th re ad an d w rite fu nc t ion s. In te rn all y g en er -
ated and regulated voltages are provided for the
program and erase operations.
The device is enti rely com mand set compatible with the
JED EC single-power-supply Flash standa rd. C om-
mand s ar e w rit t en to the c om ma nd re gis t er us ing st an-
da rd microprocessor write timings. Re gist er contents
ser ve a s inp ut t o an inte rnal sta te ma chin e th at c ontr ols
the erase and programming circuitry. Write cycles also
in te rn al l y la t c h add re s se s an d d at a ne ed ed f or t he pr o-
gramming and erase operations. Reading data out of
the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This invokes the Embedded
Program algorithm—an internal algorithm that auto-
mat ically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This invokes the Embedded Erase
al gori thm—a n i ntern al a lgo rith m th at a utomat ic all y pre-
programs the array (if it is not already programmed) be-
fore executing the erase operation. During erase, the
devi ce au tom a ticall y tim es th e e ra se pu ls e widths an d
verifies proper c ell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or er ase cycle has been completed, the device is ready
to read array data or accept another command .
The sector erase architecture allo ws me mory sect ors
to be erased and reprogrammed withou t affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The hardware data protection measures include a
low VCC detector automatically inhibits write operations
during power transitions. The hardware sector pro-
tection feature disables both program and erase oper-
ations in any combination of the sectors of memory,
and i s impl emen ted usi ng sta ndar d EPR OM pro gram -
mers.
The system can place the device into the standby mode.
Po wer co ns u mpti o n i s gr ea t ly re du ce d in th i s mo de .
ELECTRICAL SPECIFICATIONS
Refer to the Am29F010 data sheet, publication number
16736, for full electrical specifications for the
Am 29 F0 10 in KGD form .
1/13/98 Am29F010 Known Good Die 3
SUPPLEMENT
PRODUCT SELECTOR GUIDE
DIE PHOTOGRAPH
DIE PAD LOCATIONS
Family Part Number Am29F010 KGD
Speed Option (VCC = 5.0 V ± 10%) -90 -120
Max Access Time, tACC (ns) 90 120
Max CE# Access, tCE (ns) 90 120
Max OE# Access, tOE (ns) 35 50
Orientation relative to
top left corner of
Gel-Pak Orien tation relative to
leading edge of tape
and reel
1234567
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22 23
24
25
2627282930
AMD logo location
4 Am29F010 Known Good Die 1/13/98
SUPPLEMENT
PAD DESCRIPTION
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
Pad Signal Pad Center (mils) Pad Center (millimeters)
XYXY
1V
CC 0.00 0.00 0.00 0.00
2 A16 –33.20 –1.30 –0.84 –0.03
3 A15 –41.60 –1.30 –1.06 –0.03
4 A12 –49.90 –1.30 –1.27 –0.03
5 A7 –58.30 –1.30 –1.48 –0.03
6 A6 –66.60 –1.30 –1.69 –0.03
7 A5 –75.00 –1.30 –1.91 –0.03
8 A4 –74.40 –10.50 –1.89 –0.27
9 A3 –75.60 –158.20 –1.92 –4.02
10 A2 –69.40 –166.80 –1.76 –4.24
11 A1 –56.10 –166.80 –1.42 –4.24
12 A0 –46.10 –166.80 –1.17 –4.24
13 D0 –36.30 –166.90 –0.92 –4.24
14 D1 –25.90 –166.90 –0.66 –4.24
15 D2 –13.30 –166.90 –0.34 –4.24
16 VSS –4.30 –166.90 –0.11 –4.24
17 D3 4.70 –166.90 0.12 –4.24
18 D4 17.30 –166.90 0.44 –4.24
19 D5 27.60 –166.90 0.70 –4.24
20 D6 40.20 –166.90 1.02 –4.24
21 D7 50.60 –166.90 1.29 –4.24
22 CE# 60.60 –166.80 1.54 –4.24
23 A10 74.00 –166.80 1.88 –4.24
24 OE# 81.40 –158.20 2.07 –4.02
25 A11 80.20 –10.40 2.04 –0.26
26 A9 80.80 –1.30 2.05 –0.03
27 A8 72.40 –1.30 1.84 –0.03
28 A13 64.10 –1.30 1.63 –0.03
29 A14 55.70 –1.30 1.41 –0.03
30 WE# 47.40 –1.30 1.20 –0.03
1/13/98 Am29F010 Known Good Die 5
SUPPLEMENT
ORDERING INFORMATION
Standard Products
AMD KGD produ cts ar e avai lable i n seve ral pa ckages and operat ing ran ges. T he or der nu mber (Valid Combin ation) is form ed
by a combination of the following:
Valid Combinations
Valid Combinations list configurations planned to be sup-
ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F010
DEVICE NUMBER/DESCRIPTION
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
-90
SPEED OPTION
See Valid Combinations
PACKAGE TYPE AND MINIMUM ORDER QUANTITY
DP = Waffle Pack
245 die per 5 tray stack
DG = Gel-Pak® Die Tray
486 die per 6 tray stack
DT = Surftape™ (Tape and Reel)
2500 per 7-inch reel
DW = Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I=Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
DP C1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this
document. It is entered in the revision field of AMD
standard product nomenclature.
Valid Combinations
Am29F010-90 DPC 1, DPI 1, DPE 1,
DGC 1, DGI 1, DGE 1,
DTC 1, DTI 1, DTE 1,
DWC 1, DWI 1, DWE 1
Am29F010-120
6 Am29F010 Known Good Die 1/13/98
SUPPLEMENT
PRODUCT TEST F LO W
Fi gu re 1 pr ovi d es an over view of A MD’s Kn ow n G ood
Die test flow . For more detailed information, refer to the
Am29F010 produ ct quali fication database supplement
for KGD. AMD implements quality assurance proce-
dure s th roug hout t he pro duct t est flow. In a ddition , an
off-line quality monitoring program (QMP) further guar-
antees AMD quality standards are met on Known Good
Die products. These QA procedures also allow AMD to
produce KGD products without requiring or imple-
menting burn-in.
Figure 1. AMD KGD Product Test Flow
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packagi ng for Shipment
Shipment
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
1/13/98 Am29F010 Known Good Die 7
SUPPLEMENT
PHYSICAL SPECIFICATIONS
Die dimensions . . . . . . . . . . . . . . 174 mils x 189 mils
4.42 mm x 4.80 mm
Die Thickness . . . . . . . . . . . . . ~20 mils or ~0.51 mm
Bond Pad Size . . . . . . . . . . . . . . 4.47 mils x 4.47 mils
113.48 µm x 113.4 8 µm
Pad Area Free of Passivation . . . . . . . . . .19.98 mils2
12,878 µm2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
Bond Pad Metalization. . . . . . . . . . . . . . . . . . Al/Si/Cu
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
DC OPERATING CONDITIONS
VCC (Supply Voltage). . . . . . . . . . . . . . .4.5 V to 5.5 V
Junction Temperature Under Bias . .TJ (max) = 130°C
For Read-only . . . . . . . . . . .TJ (max) = 140°C
Operating Temperature . . . Commercial 0°C to +70°C
Industrial –40°C to +85°C
Exte nd ed –5 5 °C to +125°C
MANUFACTURING INFORMATION
Manufacturing and Test. . . . . . . . . Fab 14, Austin, TX
Manufacturing ID. . . . . . . . . . . . . . . . . . . . . .98108AK
Preparation for Shipment . . . . . . . .Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . CS19AFDS
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30°C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
8 Am29F010 Known Good Die 1/13/98
SUPPLEMENT
TERM S AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this
agreement shall be subject to AMD’s standard terms
and co nd itions o f sale , or an y r ev isi on s t her eo f, whic h
revisions AMD res erves the rig ht to make at any time
and from ti me to time. In th e e v e nt o f c on fli ct b et wee n
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants articles of its manufacture against
defective materials or workmanship for a period of
nin ety (9 0) da ys fr om d ate of ship ment. This warr anty
does not extend beyond AMD’s customer, and does
not extend to die which has been affixed onto a board
or substr ate of a ny kind . The liability o f AMD under this
warranty is lim ited, at AMD’s option, solely t o repair or
to re pla cemen t wit h equiv ale nt artic les, or to m ake a n
appropriate credit adjustment not to exceed the original
sales price, for articles returned to AMD, provided that:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonconformity in any article for
wh ich Buy er w ishes to mak e a warr anty claim again st
AMD; (b) Buyer obtains authorization from AMD to
return the article; (c) the article is returned to AMD,
tra nsp ort ati on ch arge s p aid by AMD, F.O. B. A MD’ s f ac-
tory; and (d) AMD’s examination of such article dis-
closes to its satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity other than
AMD. Th e aforementioned provisions do not extend
the original warranty period of any article which has
either been repaired or replaced by AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHE R WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY O F FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHO-
RIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYERS SOLE AND EXCLU-
SIVE REMEDY FOR THE FURNISHING OF DEFEC-
TIVE OR NON CONFORMING ARTICLES AND AMD
SHALL NOT IN ANY EVENT BE LIABLE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT T O FUNCTION PROPERL Y OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCI-
DENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS
OF USE OR COST OF LABOR BY REASON OF THE
FACT THAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
Buyer agrees t hat it will make no warranty representa-
tions to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemn ify AMD in wr iting fo r any claims w hich ex cee d
AMD’s warranty. Buyer assumes all responsibility for
successfu l die prep, die attach and wire bonding pro-
cesses. Due to the unprotected nature of the AMD
Products which are the subject hereof, AMD assumes
no responsibility for environmental effects on d ie.
AMD products are not designed or author ized for use
as components in life support appliances, devices or
systems where malfunction of a product can reason-
ably be expected to result in a personal inju ry. Buyer’s
use of AMD pro duct s for use in li fe sup por t app lic atio ns
is at Buyer’s own risk and Buyer agrees to fully indem-
nify AMD for any damages resulting in such use or
sale.
REVISION SUMMARY FOR AM29F010
KNOWN GOOD DIE
Formatted to match current template. Updated Distinc-
tive Characteristics and General Description sections
using the current main data sheet.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
