MBT3904DW1T1 - Motorola / Freescale Semiconductor

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA Order this document

by MBT3904DWlT1/D

—Dual General Purpose Transistors

The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are

spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

for general purpose amplifier a~~lications and are housed in the SOT–363 six–leaded

MBT3904DWI T1

MBT3906DWI TI

MBT3946DWI T1

su~ace mount package. By putting two discrete devices in one package, these

devices are ideal for low–power surface mount applications where board space is at

apremium.

hFE, 100–300

LOWvcE(sat), S0,4 V

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count Y’!,>$*

i~,f,,,,.,’.y$~,{,

Available in 8mm, 7–inch/3,000 Unit Tape and Reel $.:,,,.:~1.!.:,

“t,+

,.~,,~jt>, CASE 419B41 ,STVLE 1

.$,-i..,

~~,,:t..:.,>.~,~.:,...,,,

,.,. .,

%,~”*acteristic Symbol M= Unit

Total Pac~@&b~pation(l )PD 150 mW

TA =~5G&,~~

~.>!,...,r”~’h::.

The@al~@istance Junction to Amtient

*,. .RgJA 833 ‘cm

:l~hc#&~and Storage Temperature

...:.J~t},*... TJI Tstg –55 to ‘c

.*:,$::,,

~,*, +150

i\:T$...

‘:~~’:bevice mounted on FR4 glass epo~ printed circuit board using the minimum

‘“ recommended footprint.

DEVICE MARKING

MBT3904DW1TI =MA MBT3946DW1T1 =46

MBT3906DWITI =A2

Thermal Clad is atrademark of the Bergquist Company.

—

MBT3904DW1 T1

(3) (2) (1)

Q1 Q2

(4) (5) (6)

MBT3906DW1T1

(3) (2) (1)

Q1 Q2

(4) (5) (6)

MBT3946DW1T1*

(3) (2) (1)

Q1 Q2

(4) (5) (6)

*Q1 same as MBT3906DW1TI

Q2 same as MBT3904DWI TI

@Motorola, Inc. 1996 @MOTOROLA

,,. :,

,’

‘MBT3904DWITI MBT3906DW1T1 MBT3946DWIT1

ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)

Characteristic Symbol Min Ma Unit

:OFF CHARACTERISTICS —

Collector-Emitter Breakdown Voltage(2) V(BR)CEO lo Vdc

(1c=1.0 mAdc, IB =O) MBT3904DW1TI (NPN) —

(lc =-1.0 mAdc, IB =O) MBT3906DW1T1 (PNP) 40 —

Collector-Base Breakdown Voltage V(BR)CBO 60 Vdc

,, (1C=10 @de, [E =O) MBT3904DW1TI (NPN) —*,\

(IC =-10 ~Adc, iE =O) MBT3906DW1T1 (PNP) 40 —*’X,l,

$J,$<,.,,.,’~,’$:.

‘!,.,~1+ts.,

Emitter-Base Breakdown Voltage V(BR)EBO ~. ~“-’:;*&

(IE =10 pAdc, [c =O) MBT3904DW1T1 (NPN) _“?/i*;$ike..ii.

(lE=-lo@dC,lC=o) MBT3906DW1T1 (PNP) –5.0 .@,.+i:1~

~ey$>$.

,,,,..~u ,*

Base Cutoff Current IBL ,,t.,.~~!

,1.*$“~Jr

‘,~i+.,,,.,, nAdc

(VCE,= 30 Vdc, VEB =3.0 Vdc) MBT3904DW1T1 (NPN) ..:i

—**>’

,,,;pk$”

(VCE =-30 Vdc, VEB =-3.0 Vdc) MBT3906DWIT1 (PNP) -::’.

—~:,~..+‘Y-50

.,: *F.

*.$,

Collector Cutoff Current ~~i{,

!CEX .$:~.i:>}a.,...i}

‘,:’”:ti nAdc

(VCE =30 Vdc, VEB =3.0 Vdc) MBT3904DW1TI (NPN) ~,1~’~”?t$<’*~

,,Jt.-g\~*:$$N 50

(VCE =-30 Vdc, VEB =+.0 Vdc) MBT3906DWIT1 (PNP) ‘.:lii,,.$,,$*::—

.$’~~~:.. –50

.,...4

DC Current Gain J,

‘f&$QgE

(1c=0.1 mAdc, VCE =1.0 Vdc) MBT3904DWI T1 (NPN) ~f’~’:<>$~s$ 40 —

(1c=1.0 mAdc, VCE =1.0 Vdc) 70 —

,,+\’,‘:;*>,\

:~\\\\:,.’, ...

‘:~!,$lL.,,,,,\

(Ic =’-10 mAdc, [B =-1.0 rnAdc) \.~~.

*. *::;.,..&,

.$+~>.~ MBT3906DW1T1 (PNP)

(lc =-50 mAdc, IB =-5.0 mAdc) .,,$+$,,,,~‘

. .:.,

Base–Emitter Saturation Voltagee,, ~:+,,~ ~

(Ic =10 mAdc, IB =1.0 mAdc~’’*~~ “’’” MBT3904DWIT1 (NPN)

(IC =50 mAdc, IB =5.0 rn,@~:JX#

!.1’ ..’

‘,.<:,.i ,.,

(1c=-10 mAdc, lB~Ml .O’wdc) MBT3906DW1T1 (PNP)

(Ic =-50 mAdc, ~$$y~9Q mAdc)

.’

SMALL-SIG*% characteristics

100 300

60 —

30 —

60 —

100 300

60 —

30 —

VCE(sat) —0.2

—0.3

—4.25

—4.4

VBE(sat) 0.65 0.85

—0.95

4.65 4.85

—+.95

,,,.,(

MBT3904DWIT1 (NPN)

MBT3906DW1T1 (PNP)

Qti& Capacitance Cobo

‘~~~CB =5.0 Vdc, IE =O,f=1.0 MHz) MBT3904DW1TI (NPN)

“(VCB =-5.0 Vdc, IE =O,f=1,0 MHz) MBT3906DW1T1 (PNP)

300 —

250 —

—I4.0

—4.5

—

Vdc

MHz

Input Capacitance ~bo pF

(VEB =0.5 Vdc, Ic =O,f=1.0 MHz) MBT3904DW1T1 (NPN) —8.0

(VEB =-.5 Vdc, IC =O,f=1.0 MHz) MBT3906DW1T1 (PNP) —10.0

2, Pulse Test Pulse Width< 300p; Duty Cycle< 2.070.

—

2Motorola Small–Signal Transistors, FETs and Diodes Device Data

.,:.

—

MBT3904DWITI MBT3906DW1TI MBT3946DWIT1

ELECTRICAL CHARACTERISTICS (TA =25°C unless othewise noted) (Continued)

Characteristic Symbol Min Max Unit

Input Impedance hie kQ

(VCE =10 Vdc, Ic =1.0 mAdc, f=1.0 kHz) MBT3904DW1 TI (NPN) 1,0 10

(VCE =-10 Vdc, Ic =-1.0 mAdc, f=1,0 kHz) MBT3906DW1 T1 (PNP) 2,0 12

Voltage Feedback Ratio hre x 1o–4

(VCE =10 Vdc, IC =1.0 mAdc, f=1.0 kHz) MBT3904DW1T1 (NPN) 0.5 8.0

(VCE =-10 Vdc, Ic =-1.0 mAdc, f=1.0 kHz) MBT3906DWIT1 (PNP) 0.1 10 ~:;:.,

~?.$

Small–Signal Current Gain ~iy!..~$*.’,.<<.t.t,!

hfe

(VCE =10 Vdc, Ic =1.0 mAdc, f=1.0 kHz) MBT3904DW1T1 (NPN) /,$r”J’,,.>

:, —

100

(VCE =-10 Vdc, Ic =-1.0 mAdc, f=1.0 kHz) MBT3906DW1T1 (PNP) 100 ,,,:&j%:;; ‘

Output Admittance ......

hoe ., ,,>...:/.,

,\$,.s?

(VCE =10 Vdc, IC =1.0 mAdc, f=1.0 kHz) ,,: pmhos

.:.~..

MBT3904DW1T1 (NPN) 1.w$:~$,,$.

“>’40

(VCE =-10 Vdc, Ic =-1.0 mAdc, f=1.0 kHz) MBT3906DW1T1 (PNP) ,;~k$’”! “60

Noise Figure NF ~

~~ \.+\~,+.<\,.?..’

?.. ‘dB

(VCE =5.0 Vdc, IC =100 @de, RS =1.0 kQ, f=1.0 kHz) MBT3904DWITI (NPN) 5.0

(VCE =-5,0 Vdc, ic =-100 pAdc, Rs =1.0 k~, f=1.0 kHz) MBT3906DW1T1 (PNP) >/,s$” 4.0

SWITCHING CHARACTERISTICS ,,~\\Tt:!,*.

.,,.:.$‘.~v.“,,.}+

Delay Time s\*..,.,‘i!..-~’~’

(Vcc =3.0 Vdc, VBE =-0.5 Vdc) MBT3904DW1T1 (NPN] ‘$~,;:fi’ —35

(Vcc =-3.0 Vdc, VBE =0.5 Vdc) MBT3906DWIT1 (P~$$, ,,*:, —35

Rise Time (1c =10 mAdc, IB1 =1.0 mAdc) MBT3904DWlT~jw+ tr –ns

(1c =-10 mAdc, IB1 =-1.0 mAdc) MBT3906DwJ,T~~A@) —35

Storage Tme (Vcc =3,0 Vdc, [c =10 mAdc) MBT390$~W+$~ (NPN) ts —200

(Vcc =-3.0 Vdc, Ic =-10 mAdc) MBT3%,WIT1 (PNP) —225

Fall Tme (IB1 =IB2 =1.0 mAdc) M~~39~DWlTl (NPN) tf –ns

(IB1 =162= -1,0 mAdc) ,,,,h;pDWITl (PNP) —75

‘<’L ‘“”

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

‘~MBT3904DWlTl MBT3906DW111 MBT3946DWITI

MBT3904DW1T1 (NPN)

t3v

DUW’CYCLE =2%

lo<tj <500@+ tl l~+109v

300 ns+k“

m– “09 v275 DUTY CYCLE =2% n

t3vI275

,,. ——

0.1 0.2 0.3 Q.~:~&l.O 2.0 3.0 5.071010 203040

.,’s. .. ... ~t>:\

Ts:r5000 I I I I I II I I {III II

\,.;’,,. 3000 – “cc =40 v

l~!B =10

fin”” L

~t MBT3904DW1T1 (NPN) ~

70 IIII I I I I II I k

50 III I I I I1II tL

1.0 2.0 3.0 5.07.0 10 20 30 50 70 100 200

I ! 111

1 1$ 1 i>1 i

IIxl I1111 IJ

—

4Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1TI MBT3906DW1T1 MBT3946DW1TI

MBT3904DWIT1 (NPN)

5001<< 1III111111 II

500

300

200

100

70 II I I I I I

En !~

7~ !,

I I !I I !I“d”voi=o~

3.0 5.07.010 20 30 50 70100 200

-1.0 2,0 :

Ic, COLLECTOR CURRENT (mA)

Figure 5. Turn-On Time

500 III1[11 1I1 11 1

r~ =t~- l/8 tf-

[~1B=20& l~lB=lo\ IB1 =1B2

300

200

IIIIItI!1!! II

I—IT

Ii~lB=10’

—I I 11

I I III I 1111 I

1.0 2,0 3,0 5.07.010 20 30 ,f#b.?&iOo 200 ‘1.0 20 sn 5n7nin 9n Qn Fn 7n inn 9nn

L-

lc=100~A MBT3904DW1TI (NPN)

oIll II I I 1111

0.1 0.2 0,4 1.0 2,0 4.0 10 20 40 100

,I1 1 I I 1 1 11 1

-0.1 0.2 0,4 1.0 2.0 4.0 10 20 40 100

f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (k OHMS)

Figure 9. Noise Figure Figure 10. Noise Figure

Motorola Small-Signal Transistors, FETs and Diodes Device Data 5

‘, MBT3904DW1T1 M”BT3906DW1T1 MBT3946DW1T1

,, MBT3904DWIT1 (NPN)

hPARAMETERS

(VCE =10 Vdc, f =1.0 kHz, TA =’25°C) —

—

Ic, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

—

I ! I 1 1 1 1 1 IMBT3904DW1TI (NPN)

I I

I t , , I I I 1111

.II I I I I IIIll I I —

lc, COLLECTOR C@#E,@fi~) Ic, COLLECTOR CURRENT (mA)

Figure 14. Voltage Feedback Ratio

—

,, 6’ Motorola Small–Signal Transistors, FETs and Diodes Device Data

—

MBT3904DWIT1 MBT3906DW1T1 MBT3946DW1

MBT3904DW1T1 (NPN)

TVPICAL STATIC CHARACTERISTICS

2!0

1.0

0.7

0.5

0.3

0.2

0.1 0

lc, COLLECTORCURRENT(mA) .:1,.,h$.*.-

,~j,>.,,.~$,!.,~,.Y,$””

Figure 15. DC Current Gain ‘~(::k~’

“:p”v::.

,,, , ,.., .,

.,., ....>.,.-,,,.

1.0

0.5

-1.5

–9 n

I I I1

MBT3904DW1T1(NPN) I

I I +25°CTOt125°C —

-55°C TOt25°C

-55°CTOt25°C

I I I

t25°C TOt125°C —

-.” 020 40 60 80 100 120 140 160 180 200

Ic, COLLECTORCURRENT(mA) Ic, COLLECTORCURRENT(mA)

Figure 17. “ON” Voltages Figure 18. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data 7

:. ,.

MBT3904DW1T1 MBT3906DW1T1 MBT3946DWIT1

MBT3906DW1T1 (PNP)

—

~’::,:k,.<>

Figure 19. Delay and Rise Time ,$,,,::8,\.

Figure 20. Storage ~~’~fime

Equivalent Test Circuit Equivalent T@t C*~uit

VT CHARACTERISTIS ‘“*’

—

, , I I I

uIII I I I

5~nl ..$;?

II I I ! ! I!ll IIN II II I I .,. 1111

5500 1 1 I I I I 41A 1 1 1 1 1 1 11 II

1I I I1! 1111 I I I ..4 lull II70

‘1,01 ....

,,, , . ,,‘.

0.1 0.2 0,3 0.50,71.0 .2.0 3.fJ\ 5.$7:010 20 3040 50 1.0 2.0 3.0 5.07,0 10 20 30 50 70’100 200

REVERSE Bf~’’~t~’) Ic,COLLECTOR CURRENT (mA)

?,-

;b!:..‘]?S>r.,-*..

Figure ~J~p~cltance

,.O

I I I I I II I

Figure 22. Charge Data

500 IIIll I I I I11111 I

MBT3906DWIT1 (PNP) __vcc=40v _

IIB1 =1B2

I I I I Ill I11 1

300

200

100

1/ t1II I I I II I

51.0 2.0 3,0 5.07.0 10 20 30 50 70100 200

1 1 1II1 1 )11 ~@v~- “’J z

II I I I I1111

-1,0 2.0 3!0 5.07.010 20 30 50 70100 200

Ic,COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA)

Figure 23. Turn-On Time Figure 24. Fall Time

,8 Motorola Small-Signal Transistors, FETs and Diodes Device Data

MBT3904DW1TI MBT3906DWIT1 MBT3946DW1T1

MBT3906DW1TI (PNP)

TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE =-5.0 Vdc, TA =25”C, Bandwidth =1.0 Hz)

—12 I I I I II1111111/ I I AI111111

–f=l.OkHz -Ic=l.om

10 I I I I I[It

II I 1111111 Ic

-0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100

f, FREQUENCY (kHz)

Figure 25. Figure 26.

100

—

7II I I I I II I I I I I 1111

KI I II

“0.1 0.2 0.3 0.5 0.7 1.0 2,0 3.0 5.0 7.0 10

Ic,COLLECTOR CURRENT (mA)

,,J lc~*~ECTOR CURRENT (mA)

Figure 28. Output Admittance

1I1I1111

%III I I I I II

1> I I I I I II

~1.0 I11II1 1 1 I1Iml 1I1 1

, , I , $I , I , I , rWI , , I

zn? I I IN

—U.t

~~ 0.5

0.3

0.2

..—

0.1 0.2 0.3 0.5 0.7 1.0 2,0 3.0 5.0 7.0 10 c= ‘“”0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10

Ic, COLLECTOR CURRENT (mA)

Figure 30. Voltage Feedback Ratio

Ic, COLLECTOR CURRENT (mA)

Figure 29. Input Impedance

Motorola Small–Signal Transistors, FETs and Diodes Device Data 9

MBT3904DWIT1 MBT3906DW1T1 MBT3946DW1T1

MBT3906DW1T1 (PNP)

TYPICAL STATIC CHARACTERISTICS

1.0 2.0 5,0 10 20 50 100 200

Ic,

COLLECTORCURRENT (mA)

m -2,0

-55°CTO t25°C .

- \

-MBT3906DWIT1 (PNP) I I

–55°C TO t25°C —

-8VBFORVBE(~at)

/II I

o20 40 60 80 100 120 140 160 180 200

Ic,COLLECTOR CURRENT (mA)

Hgure 33. “ON” Voltages Hgure 34. Temperature Coefficients

10 Motorola Small-Signal Transistors, FETs and Diodes Device Data

—

INFORMATION

MBT3904DW1TI MBT3906DW1TI MBT3946DW1T1

FOR USING THE SOT-363 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Sutiace mount board layout is acritical portion of the total interface between the board and the package. With the

design. The footprint for the semiconductor packages must

—correct pad geometry, the packages will self align when

be the correct size to insure proper solder connection subjected to asolder reflow process.

The

pad size. This can vary from the minimum pad size f&#$::,’”s’

—soldering to apad size given for maximum power di~ipatin.

Power dissipation for asurface mount device is,$~~{rnined

—by TJ(max), the maximum rated junction tem~(~~reof the

die, R8JA, the thermal resistance from the,@,~~.junction to

‘\~\<”

ambient, and the operating tempera&$~$-j~#. Using the

values provided on the data sheet for@~@7-363 package,

PD can be calculated as follows: <i,“k~~ ~

\.t,~\:\‘*?::.%,,>;?J

,1.:: “’.]>

The values for ~he’$~.@tion are found in the maximum

ratings table on ~,data sheet. Substituting these values into

the equationJo~~#tibient temperature TA of 25°C, one can

,,,>i~$

calculate,~~~:,,~~er dissipation of the device which in this

case isit~+~~i watts.

*,:,?*U.

,,*.. ?i~,,,

‘“*S..,

~j~ik,,h. ,1.

:~<..:.y,~i..

{The833°CM for the SOT–363 package assumes the use

ofthe recommended footprint on aglass epoxy printed circuit

board to achieve apower dissipation of 150 milliwatts. There

are other alternatives to achieving higher power dissipation

from the SOT–363 package. Another alternative would be to

use aceramic substrate or an aluminum core board such as

Thermal Clad’”. Using aboard material such as Thermal

Clad, an aluminum core board, the power dissipation can be

doubled using the same footprint.

—

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to ahigh temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

●

☛

Always preheat the device.

The delta temperature between the preheat and soldering

should be 10O°C or less.*

When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference shall be amaximum of 10°C.

The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

When shiting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

Mechanical stress or shock should not be applied during

cooling.

Soldering adevice without preheating can cause excessive

thermal sh;ck and stress which can result in damage to the

device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data 11

.:.’ .!

,’

MBT3g04DtilTl MBT3906DWIT1 MBT3946DWIT1

PAC~GE DIMENSIONS

,-, -”.

1. DIMENSIONING ANO ~LERANCING PER ANSI

Y14.5M, 1962,

2, CO~ROLLING OIMENSION INCH.

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—

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