BCX70HT/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 15

2004 Jan 16

DISCRETE SEMICONDUCTORS

BCX70 series

NPN general purpose transistors

2004 Jan 16 2

NXP Semiconductors Product data sheet

NPN general purpose transistors BCX70 series

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 45 V).

APPLICATIONS

•General purpose switc hing and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package.

PNP complements: BCX71 series.

MARKING

Note

1. * = p : Made in Hong Kong .

* = t : Made in Malaysia.

* = W : Made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BCX70G AG*

BCX70H AH*

BCX70J AJ*

BCX70K AK*

PIN DESCRIPTION

1base

2emitter

3collector

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM255

Top view

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BCX70G −plastic surface mounted p a ckage; 3 leads SOT23

BCX70H

BCX70J

BCX70K

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NXP Semiconductors Pr oduct data shee t

NPN general purpose transistors BCX70 series

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating System (IEC 60134).

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed- circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter −45 V

VCEO collector-emitter voltage open base −45 V

VEBO emitter-base vo ltage open collector −5 V

ICcollector current (DC) −100 mA

ICM peak collector current −200 mA

IBM peak base current −200 mA

Ptot total power dissipation Tamb ≤ 25 °C−250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient note 1 500 K/W

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NXP Semiconductors Pr oduct data shee t

NPN general purpose transistors BCX70 series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector cut-off current IE = 0; VCB = 45 V − − 20 nA

IE = 0; VCB = 45 V; Tamb = 150 °C− − 20 μA

IEBO emitter cut-off current IC = 0; VEB = 4 V − − 20 nA

hFE DC current gain IC = 10 μA; VCE = 5 V

BCX70G − − −

BCX70H 40 − −

BCX70J 30 − −

BCX70K 100 − −

DC current gain IC = 2 mA; VCE = 5 V

BCX70G 120 −220

BCX70H 180 −310

BCX70J 250 −460

BCX70K 380 −630

DC current gain IC = 50 mA; VCE = 1 V

BCX70G 50 − −

BCX70H 70 − −

BCX70J 90 − −

BCX70K 100 − −

VCEsat collector-emitter saturation

voltage IC = 10 mA; IB = 0.25 mA 50 −350 mV

IC = 50 mA; IB = 1.25 mA 100 −550 mV

VBEsat base-emitt er saturatio n voltage IC = 10 mA; IB = 0.25 mA 600 −850 mV

IC = 50 mA; IB = 1.25 mA 700 − 1 050 mV

VBE base-emitter vo ltage IC = 10 μA; VCE = 5 V −520 −mV

IC = 2 mA; VCE = 5 V 550 650 750 mV

IC = 50 mA; VCE = 1 V −780 −mV

Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −1.7 −pF

Ceemitter cap a citance IC = ic = 0; VEB = 0.5 V; f = 1 MHz −11 −pF

fTtransition freque ncy IC = 10 mA; VCE = 5 V; f = 100 MHz;

note 1 100 250 −MHz

Fnoise figure IC = 200 μA; VCE = 5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz −26dB

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NXP Semiconductors Pr oduct data shee t

NPN general purpose transistors BCX70 series

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

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NXP Semiconductors Pr oduct data shee t

NPN general purpose transistors BCX70 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa t ion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other cond itions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

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case of any incons istency or conflict betwee n information

in this document an d such terms and conditio ns, the latter

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No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

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described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

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The information pr e sent ed in this document d oes not form part o f an y quotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

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under patent- or other ind us trial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/04/pp7 Date of release: 2004 Jan 16 Document orde r number: 9397 750 12408