NDT452APJ23Z - Fairchild Semiconductor

June 1996

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description Features

________________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter NDT452AP Units

VDSS Drain-Source Voltage -30 V

VGSS Gate-Source Voltage ±20 V

IDDrain Current - Continuous (Note 1a) -5 A

- Pulsed - 15

PDMaximum Power Dissipation (Note 1a) 3W

(Note 1b) 1.3

(Note 1c) 1.1

TJ,TSTG Operating and Storage Temperature Range -65 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W

RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W

* Order option J23Z for cropped center drain lead.

NDT452AP Rev. B1

-5A, -30V. RDS(ON) = 0.065Ω @ VGS = -10V

RDS(ON) = 0.1Ω @ VGS = -4.5V.

High density cell design for extremely low RDS(ON).

High power and current handling capability in a widely used

surface mount package.

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and DC motor

control.

D

DS

G

D

S

G

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V

IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 µA

TJ = 55°C -10 µA

IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.6 -2.8 V

TJ = 125°C -0.7 -1.2 -2.2

RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -5.0 A 0.052 0.065 Ω

TJ = 125°C 0.075 0.13

VGS = -4.5 V, ID = -4.3 A 0.085 0.1

ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V -15 A

VGS = -4.5 V, VDS = -5 V -5

gFS Forward Transconductance VDS = -10 V, ID = -5.0 A 7S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -15 V, VGS = 0 V,

f = 1.0 MHz 690 pF

Coss Output Capacitance 430 pF

Crss Reverse Transfer Capacitance 160 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)Turn - On Delay Time VDD = -10 V, ID = -1 A,

VGEN = -10 V, RGEN = 6 Ω9 20 ns

trTurn - On Rise Time 20 30 ns

tD(off) Turn - Off Delay Time 40 50 ns

tfTurn - Off Fall Time 19 40 ns

QgTotal Gate Charge VDS = -10 V,

ID = -5.0 A, VGS = -10 V 22 30 nC

Qgs Gate-Source Charge 3.2 nC

Qgd Gate-Drain Charge 5.2 nC

NDT452AP Rev. B1

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current -2.5 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.5 A (Note 2) -0.85 -1.2 V

trr Reverse Recovery Time VGS = 0 V, IF = -2.5 A, dIF/dt = 100 A/µs 100 ns

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by

design while RθCA is determined by the user's board design.

PD(t)=TJ−TA

RθJA(t)=TJ−TA

RθJC+RθCA(t)=ID

2(t)×RDS(ON)TJ

Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 42oC/W when mounted on a 1 in2 pad of 2oz copper.

b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper.

c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDT452AP Rev. B1

1a 1b 1c

NDT452AP Rev. B1

-4-3-2-10

-20

-15

-10

-5

0

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -10V

GS

DS

D

-4.0

-6.0 -5.0

-3.5

-3.0

-4.5

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

V = -10V

GS

I = -5.0A

D

R , NORMALIZED

DS(ON)

-50 -25 025 50 75 100 125 150

0.6

0.7

0.8

0.9

1

1.1

1.2

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

I = -250µA

D

V = V

DS GS

J

V , NORMALIZED

th

-20-16-12-8-40

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

D

R , NORMALIZED

DS(on)

V = -3.5V

GS

-10

-5.0

-6.0

- 4.0

-4.5

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

Figure 3. On-Resistance Variation with

Temperature. Figure 4. On-Resistance Variation with Drain

Current and Temperature.

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with

Temperature.

-6-5-4-3-2-1

-20

-15

-10

-5

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = -10V

DS

GS

D

T = -55°C

J

25°C

125°C

-20-16-12-8-40

0.5

1

1.5

2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

D

R , NORMALIZED

DS(on)

V = -10V

GS

T = 125°C

J

25°C

-55°C

NDT452AP Rev. B1

-50 -25 025 50 75 100 125 150

0.94

0.96

0.98

1

1.02

1.04

1.06

1.08

1.1

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

I = -250µA

D

BV , NORMALIZED

DSS

J00.4 0.8 1.2 1.6 2

0.001

0.01

0.1

1

5

10

20

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J25°C -55°C

V = 0V

GS

SD

S

0 5 10 15 20 25

0

2

4

6

8

10

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

g

GS

I = -5.0A

DV = -5V

DS -10V -20V

0.1 0.2 0.5 1 2 5 10 30

100

200

300

500

1000

2000

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0V

GS

C

oss

C

rss

Figure 7. Breakdown Voltage Variation with

Temperature. Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

Typical Electrical Characteristics

D

S

-VDD

RL

VOUT

VGS DUT

VIN

RGEN G

Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.

10%

50%

90%

10%

90%

50%

VIN

VOUT

on off

d(off) f

r

d(on)

t t

ttt

t

INVERTED

10%

PULSE WIDTH

NDT452AP Rev. B1

Typical Thermal Characteristics

-20-16-12-8-40

0

3

6

9

12

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

T = -55°C

J

25°C

D

FS

V = -10V

DS

125°C

Figure 13. Transconductance Variation with Drain

Current and Temperature.

00.2 0.4 0.6 0.8 1

0.5

1

1.5

2

2.5

3

3.5

2oz COPPER MOUNTING PAD AREA (in )

STEADY-STATE POWER DISSIPATION (W)

2

1c

1b

1a

4.5"x5" FR-4 Board

T = 25 C

Still Air

Ao

Figure 14. SOT-223 Maximum Steady- tate

Power Dissipation versus Copper

Mounting Pad Area.

Figure 16. Maximum Safe Operating Area.

00.2 0.4 0.6 0.8 1

2

3

4

5

6

2oz COPPER MOUNTING PAD AREA (in )

I , STEADY-STATE DRAIN CURRENT (A)

2

1c

1b

1a

4.5"x5" FR-4 Board

T = 25 C

Still Air

V = -10V

Ao

GS

D

0.1 0.2 0.5 1 2 5 10 30 50

0.01

0.05

0.1

0.5

1

5

10

20

50

- V , DRAIN-SOURCE CURRENT (V)

-I , DRAIN CURRENT (A)

DS

D

10ms

100ms

10s

1s

DC

100us

1ms

RDS(ON) LIMIT

V = -10V

SINGLE PULSE

R = See Note 1c

T = 25°C

GS

A

θJA

Figure 15. Maximum Steady-State Drain

Current versus Copper Mounting Pad

Area.

Figure 17. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change

depending on the circuit board design.

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

12

R (t) = r(t) * R

R = See Note 1 c

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2