OKI Semiconductor MSC23832A-xxBS16/DS16 8,388,608-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MS$C23832.A-xxBS16/DS516is a fully decoded 8,388,608-word x 32-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs (4M x4) in SO] packages mounted with sixteen decoupling capacitors on a 72-pin glass epoxy single-inline package. This module is generally used for non-parity memory expansion applications such as fax machines, printers and personal computers. FEATURES * 8-Meg x 32-bit organization * 72-Pin Socket Insertable Module MSC23832A-xxBS16 : Gold tab MSC23832A-xxDS16 : Solder tab * Single 5 V supply +10% tolerance * Access times : 60, 70, 80 ns *Input : TTL compatible * Cutput : TTL compatible, 3-state * Refresh : 2048 cycles/32 ms * CAS before RAS refresh, CAS before RAS hidden refresh, RAS-only refresh capability * Multi-bit test mode capability * Fast Page Mode capability PRODUCT FAMILY Family Access Time (Max.)} Cycle Time Power Dissipation trac | tas | toac (Min.) _| Operating (Max.}| Standby (Max.) MSC23832A-60BS16/DS16 60ns | 30ns | 1505 110 ns 500 mw 88 mW MSC23832A-70BS16/DS16 7Ons | 35ns | 20ns 130 ns 5060 mW (MOS level) MSC23832A-80BS 16/DS16 80ns | 40ns | 20ns 150 ns - 4620 mw 127MSC23832A-xxBS16/DS16 OKI Semiconductor PIN CONFIGURATION MSC23832A-xxBS16/0S16 4 107.95 +0.2 9.30 Max. 101.19 Typ. $3.18 25.4 20.2 BS Typ. r 10.16 wet} |1 2.03 Typ. G 3.50 wal 127 4, 6.35 Typ. 1 The common size difference of the board width 12.5 mm of its height is specified as +0.2. The value above 12.5 mm is specified as +0.5. Pin No. |Pin Name| | Pin No. |Pin Namo] | Pin No. |Pin Namel | Pin No. |Pin Namal | Pin No. |Pin Name 1 Vss 16 A4 31 Aa 46 NC 61 DQ13 2 do 7 AS 32 AQ 47 WE 62 DG30 3 DQ16 18 AG 33 RASS 48 NG 63 DQ14 4 Dd1 19 A10 34 RASS 49 DOs 64 DQ31 5 DQ17 20 DQ4 35 NG 50 Daz4 65 nQ15 6 ~pd2 21 DQ20 36 NC 51 BOS 66 NG 7 DQ18 22 DQS5 37 NC 52 D025 67 PD 8 DQ3 23 DQ21 38 NC 53 DQG 68 PD2 9 ba19 24 DQ6 39 Ves 54 DQ26 69 PD3 10 Vee 26 DQ22 40 CASO 55 DQ11 70 PD4 11 NC 26 par 41 CAS2 56 D027 71 NC 12 AQ 27 DQ23 42 CASS 57 bat2 72 Vss 13 At 28 AT 43 CAST 58 0028 14 A2 29 NG 44 RASO 59 Voc 16 A3 30 Voc 45 RAST 60 DQ29 Presence Detect Pins PinNe, | PinName | _ggeceamszn, | Mscaasson, | _MSCZSES2A, 67 PO1 NC NC NC 68 PB2 Vs Vss5 Vss 69 PD3 NC Vs NC 70 PD4 NC NC Vss 128OKI Semiconductor MSC23832A-xxBS16/DS16 BLOCK DIAGRAM AQ -AI0 WE $j Ao- aig DO DQO o-| A0-a19 20 0016 ras co Fly 00) ae mas 99 | fy Bot CASO TAS TAS? TAS pa 003 WE bd ooig oF Voc Veg Lb Vee Vs i i | } #4 A0- At0 pa - | 40- aro DO RAST FAS ng RASS WAS OG we 0 oS bg ve WE Vee Veg > Voc Vs I l I L Ag - Aig DG po4 Aig OQ paz0 7 mag 0 DOs Tr aa pa pozt pa 006 pa paz2 CAS CAS WE pa 007 we (Oe 0023 CE CE Voc Veg iG Voc Vsg | i L #4 A0- aig 00 P-' Ad ato 0Q, fas 00 u Rag 00 dQ DO CAS CAS We DQ We DO Voc Vss by Voc Vs | | I 4 A0- Ato 00 008 #4 A0- Ato DO DQ24 RAS OG bag BAS 0G DO25 D pat 00 paz6 CASI a pa pot1 CASS: crs ba pa27 Vee Vss aL Vec Vs l I @| AG-A10 By | J $+ AG - Aig DO RAS 00 RAS Oo OE Voc Vss ib Voc Ves | I I | @ A0-atg DO DaI2 | ag - aig 20 baz8 Rag 00 pQ13 fag 00 pa29 us 0 pots arg (00 pa30 We pa DOtS We 00 past v OE CG Vs Ib Voc Vsg | I I T L} ag- arg 92 - LL] ao aig 20 tas (0 tas (08 We OQ pa i Vss ib Veco Veg Ver oe | Ciyp 1 Vss + Tt 6 129MSC23832A-xxBS16/DS16 OKI Semiconductor ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on Any Pin Relative to Vsgs Vin, Vout -1.0 to 7.0 Vv Voltage Voc Supply Relative to Vss Vee -1.0 to 7.0 Vv Short Circuit Output Current los 50 mA Power Dissipation Pp 16 Ww Operating Temperature Topr Oto 70 C Storage Temperature Tstg 40 to 125 C Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended Operating Conditions Ta = 0C to 70C) Parameter Symbol Min. Typ. Max. Unit Vec 45 5.0 5.5 V Power Supply Voltage Ves 0 P 0 v Input High Voltage Vin 2.4 _ 6.5 V Input Low Voltage Vit ~1.0 _ 0.8 V Capacitance (Ta = 25C, f = 1 MHz) Parameter Symbol Typ. Max. Unit Input Capacitance (AO - A10) Cin _ 109 pF Input Capacitance (WE) Cine 125 pF Input Capacitance C _ 95 E (RASO - RASS, CASO - CASS) Ns P \/0 Capacitance (DQ0 - D031) Coo _ 26 pF Note: Capacitance measured with Boonton Meter. 130OKI Semiconductor DC Characteristics MSC23832A-xxBS16/DS16 (Veg = 5 V 210%, Ta = 0C to 70C} MSG23832A MSC23832A MSC23832A Parameter Symbol Condition -60BS16/DS16 | -70BS16/DS16 | -806S16/D516 | Unit |Note Min. | Max. | Min. | Max. | Min. | Max. OVSWS65V; Input Leakage Current iL) | Allother pins not | -160 | 160 | -160 | 160 | -160] 160 | pA under test = OV Output Leakage Current | Ig | DOvr disable -20 | 20 | -20| 20 | -20| 20 | pa OVSVoS55V Output High Voltage Von | lon = -5.0 mA 24 Veo | 2.4 | Vee 24 1 Veo } V Output Low Voitage Vor | lor = 4.2 mA 0 0.4 0 0.4 0 0.4 V Average Power e ae. Supply Current lect RAS, CAS eyeling, | 1000 | | 920 | 840 | mAj 1,2 . trac = Min. (Operating) Power Supply | pe oS Vin ~ 32 _ 32 ~ 32 {mal 4 cc2 : Current (Standby) > Veg-0.2 V _ 16 _ 16 _ 16 | mA} 1 Average Power RAS cycling, Supply Current leca | GAS = Vin, | 1000} | 920 | 840 | mA] 1,2 (RA5S-only Refresh) Inc = Min. - Average Power RAS cycling, Supply Current Icce | CAS before RAS, | | 10001 | 920 | | 840 | mA] 1,2 {CAS before RAS Refresh) tac = Min. Average Power RAS = Vi, Supply Current Icez | GAS cycling, _ 920 | 840 _ 760 | mA| 1,3 (Fast Page Mode) tec = Min. Notes: 1. Specified values are obtained with the output open. 2. Address can be changed once or less while RAS=V}j,. 3. Address can be changed once or less while CAS=Vj}1. 131MSC23832A-xxBS16/DS16 OKI Semiconductor AC Characteristics (1/2) (Vcc = 5 V 210%, Ta = 0C to 70C) Note 1,2,3,9,10 MSC23832A | MSC23832A | MSC23892A Parameter Symbol! -608S16/DS16 | -768S16/DS16 | -80BS16/DS16 | Unit| Note Min. | Max. | Min. | Max.| Min. | Max. Random Read or Write Cycle Time trac | 110 _ 130 _ 150 _ ng Fast Page Mode Cycle Time tec 40 _ 45 _ 50 _ ns. Access Time from RAS trac | 60 70 _ 80 | ms |4,5,6 Access Time from CAS tcac | 15 20 _ 20 | ns | 4,5 Access Time from Column Address taa _ 30 _ 35 ad 40 ns | 4,6 Access Time trom CAS Precharge tera | 35 40 45 |ns| 4 Output Low Impedance Time from CAS fez 0 _ 0 - 0 _ ns 4 Output Buffer Turn-off Delay Time torr 0 15 0 20 0 20 ns 7 Transition Time ty 3 50 3 50 3 50 ns 3 Refresh Period teep | 32 _ 32 _ 32 ms RAS Precharge Time tae | 40 _ 50 60 ns RAS Pulse Width tras | 60 10K 70 10K 80 10K | ns RAS Pulse Width (Fast Page Mode) tease | 60 | 100K | 70 | 100K | 80 | 100K | ns RAS Hold Time tasH 15 _ 20 _ 20 _ ns CAS Precharge Time top 10 10 ~ 16 _ ns CAS Pulse Width teas | 15 10K 20 10K 20 10K | as CAS Hold Time tesH | 60 _ 70 80 | ns CAS to RAS Precharge Time tere | 10 _ 105 10 | ns RAS to CAS Delay Time taco | 20 45 20 50 20 60 | ns| 5 RAS to Column Address Delay Time thap | 15 30 15 35 15 40 ns 6 Row Address Set-up Time tasr 0 _ 0 _ 0 _ ns Row Address Hold Time tran | 10 ~ 10 _ 10 ns Column Address Set-up Time tase 0 _ 0 _ 0 _ ns Column Address Hold Time tean | 15 _ 16 _ 16 _ ns Column Address Hold Time from RAS tan | 50 _ 55 _ 60 | os Coiuma Address to RAS Lead Time tra, | 30 - 35 40 | os 132OKI Semiconductor MSC23832A-xxBS16/DS16 AC Characteristics (2/2) (Voc = 5 V 10%, Ta =0C to 70C) Note 1,2,3,9,10 MSC23832A | MSC23832A | MSC23632A Parameter Symbol] -60BS16/D$16 | -708516/DS16 | -808S16/DS16 |Unit | Note Min. | Max. | Min. | Max. | Min. | Max. Read Command Set-up Time tres 0 _ 0 _ 0 _ ns Read Command Hold Time trey 0 _ 0 _ 0 _ ns B Read Command Hold Time referenced to RAS | tary 0 0 _ 0 _ ns 8 Write Command Set-up Time twes 0 _ 0 _ 0 | os Write Command Hold Time tweH 10 _ 15 _ 16 _ ns Write Command Hold Time from RAS twen | 45 | 55 _ 60 | ns Write Command Pulse Width twe 19 _ 10 _ 10 ns Write Command to RAS Lead Time tawe 15 _ 20 _ 20 _ ns Write Command to CAS Lead Time teow. | 15 | 20 _ 20 | 1s Data-in Set-up Time tps 0 _ 0 _ 0 _ ns Data-in Hold Time tou 15 _ 15 _ 15 - ns Data-in Hold Time from RAS tour | 50 56 60 | ns CAS Active Delay Time from RAS Precharge| trec 10 _ 10 _ 10 | ns RAS to CAS Set-up Time (CAS before RAS)| tesa | 10 10 10 | ns RAS to CAS Hold Time (CAS before RAS) | tcun | 20 20 _ 20 | = | ns CAS Precharge Time (Refresh Counter Test}| tept 40 _ 40 _ 40 | ns WE to RAS Precharge Time (CAS before RAS}| twap | 10 /| 10; = 10 | - | os WE Hoid Time from RAS (CAS before RAS)| twa | 10 | | 10 | to | | ns BAS to WE Set-up Time (Test Mode) twrs | 10 10 10 | as RAS to WE Hold Time (Test Mode) two | 20 20 20 | ns 133MSC23832A-xxBS16/DS16 Notes: 134 OKI Semiconducter 1. A start-up delay of 200 is is required after power-up followed by a minimum of eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before proper device operation is achieved. When using the internal refresh counter, a minimum of eight CAS before RAS initialization cycles is required. AC mesurement assume ty = 5 ns. - Vin (Min.) and Vi_ (Max.) are reference levels for measuring input timing signals. Transition times are measured between Vjy and Vi. Measured with a load circuit equivalent to 2 TTL loads and 100 pF. Operation within the tpcp (Max.) limit ensures that trac (Max.) can be met. trcp (Max.) is specifiedas a reference point only. If tpcpis greater than the specified trcp (Max.) limit, access time is controlled by tcac. Operation within the trap (Max.) limit ensures that trac (Max.) can be met. trap (Max.) is specified as a reference point only. Iftpapis greater than the specified trap (Max.) limit, access time is controlled by ta. . torr (Max.) defines the time at which the output achieves an open circuit condition and is not referenced to output voltage levels. - tRCH OF trrH must be satisfied for a read cycle. 10. . The test mode is initiated by performing a WE and CAS before RAS refresh cycle. This mode is latched and remains in effect until the exit cycle is generated. The test mode specified in this data sheet is an 8-bit parallel test function. CA10, CA1 and CAO are not used. Ina read cycle, if all internal bits are equal, the DQ pin will indicate a high level. If any internal bits are not equal, the DQ pin will indicate a low level. The test mode is cleared and the memory device returned to its normal operating state by performing a RAS-only refresh cycle or a CAS before RAS refresh cycle. In a test mode read cycle, the access time parameters are delayed by 5 ns. The test mode parameters are obtained by adding 5 ns to the normal read cycle values. See ADDENDUM E for AC Timing Waveforms