IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTF1N400
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 50V, ID = 0.5 • ID25, Note 1 0.55 0.95 S
Ciss 2530 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 93 pF
Crss 30 pF
td(on) 28 ns
tr 24 ns
td(off) 81 ns
tf 90 ns
Qg(on) 78 nC
Qgs VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 10 nC
Qgd 35 nC
RthJC 0.78 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 1 A
ISM Repetitive, Pulse Width Limited by TJM 5 A
VSD IF = 1A, VGS = 0V, Note 1 4 V
trr IF = 1A, -di/dt = 100A/μs, VR = 200V 3.5 μs
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 2Ω (External)
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Idss measurement.
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate
Pin 2 = Soure
Pin 3 = Drain
Pin 4 = Isolated