SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 JUNE 1996
PARTMARKING DETAILS
BC807 5DZ BC808 5HZ
BC807-16 5AZ BC808-16 5EZ
BC807-25 5BZ BC808-25 5FZ
BC807-40 5CZ BC808-40 5GZ
COMPLEMENTARY TYPES BC807 BC817
BC808 BC818
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BC807 BC808 UNIT
Collector-Base Voltage VCBO -50 -30 V
Collector-Emitter Voltage VCEO -45 -25 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -1 A
Continuous Collector Current IC-500 mA
Base Current IB-100 mA
Peak Base Current IBM -200 mA
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
ICBO -0.1
-5 µA
µA
VCB
=-20V, IE=0
VCB
=-20V, IE=0, Tamb
=150°C
Emitter Cut-Off Current IEBO -10 µAVEB=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat) -700 mV IC=-500mA, IB=-50mA*
Base-Emitter
Turn-on Voltage
VBE(on) -1.2 V IC=-500mA, VCE=-1V*
Static Forward Current
Transfer Ratio
hFE 100
40
600 IC=-100mA, VCE=-1V*
IC=-500mA, VCE=-1V*
-16 100 250 IC=-100mA, VCE=-1V*
-25 160 400 IC=-100mA, VCE=-1V*
-40 250 600 IC=-100mA, VCE=-1V*
Transition
Frequency
fT100 MHz IC=-10mA, VCE
=-5V
f=35MHz
Collector-base
Capacitance
Cobo 8.0 pF IE=Ie=0, VCB
=-10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
BC807
BC808
C
B
E
SOT23
3 - 9
PART OBSOLETE - USE BCW68H
