BY253P-E3/73 - Vishay [General Semiconductor]

Document Number: 88838 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 04-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1

General Purpose Plastic Rectifier

BY251P thru BY255P

Vishay General Semiconductor

FEATURES

• Low forward voltage drop

• Low leakage current, IR less than 0.1 μA

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes application.

Note

• These devices are not AEC-Q101 qualified.

MECHANICAL DATA

Case: DO-201AD, molded epoxy body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: Color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 3.0 A

VRRM 200 V to 1300 V

IFSM 150 A

IR5.0 μA

VF1.1 V

TJ max. 150 °C

DO-201AD

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT

Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1300 V

Maximum RMS voltage VRMS 140 280 420 560 910 V

Maximum DC blocking voltage VDC 200 400 600 800 1300 V

Maximum average forward rectified current

10 mm lead length IF(AV) 3.0 A

Peak forward surge current 10 ms single half

sine-wave superimposed on rated load IFSM 150 A

Maximum full load reverse current, full cycle average

10 mm lead length IR(AV) 100 μA

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT

Maximum instantaneous

forward voltage 3.0 A VF1.1 V

Maximum reverse current

at rated DC blocking voltage TA = 25 °C IR5.0 μA

Maximum reverse

recovery time

IF = 0.5 A, IR = 1.0 V,

Irr = 0.25 A trr 3.0 μs

Typical junction capacitance 4.0 V, 1 MHz CJ40 pF

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88838

2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-Nov-09

BY251P thru BY255P

Vishay General Semiconductor

Note

(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current

Fig. 3 - Maximum Non-repetitive Peak Forward Surge Current

Fig. 4 - Typical Instantaneous Forward Characteristics

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL BY251P BY252P BY253P BY254P BY255P UNIT

Typical thermal resistance

RθJA (1) 20

°C/W

RθJL (1) 10

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

BY253P-E3/54 1.1 54 1400 13" diameter paper tape and reel

BY253P-E3/73 1.1 73 1000 Ammo pack packaging

4.0

3.0

2.0

1.0

0 25 50 75 100 125 150 175

Average Forward Rectied Current (A)

Ambient Temperature (°C)

60 Hz Resistive

or Inductive Load

10 mm Lead Length

1 10 100

1000

100

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

TA = 55 °C

8.3 ms Single Half Sine-Wave

020 40 60 80 100

0.01

0.1

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (μA)

= 125 °C

= 25 °C

= 75 °C

0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3

100

0.1

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

TJ = 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

Document Number: 88838 For technical questions within your region, please contact one of the following: www.vishay.com

Revision: 04-Nov-09 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3

BY251P thru BY255P

Vishay General Semiconductor

Fig. 5 - Typical Junction Capacitance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

110 100

100

Reverse Voltage (V)

Junction Capacitance (pF)

TJ = 25 °C

f = 1.0 MHz

Vsig = 50 mVp-p

DO-201AD

0.210 (5.3)

0.190 (4.8)

DIA.

0.052 (1.32)

0.048 (1.22)

DIA.

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.375 (9.5)

0.285 (7.2)

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Revision: 12-Mar-12 1Document Number: 91000

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