110 93 0 .2 5 11 14 14 11 14 4-O6.5 108 93 0 .2 5 14 11 14 11 14 6 5 4 25 9 16 25 9 16 3 2 5 4 25 24 16 9 25 16 9 24 16 23 7 23 LABEL 7 30 LABEL 30 +1.0 - 0.5 +1.0 - 0.5 8 16 1 8 5(E1) 4(G1) 7 3 2 4-O 6.5 62 11 13 20 1 6 (C1) 3 80 13 20 (E2) 2 11 (C2E1) 1 15 6 62 0 .2 5 3-M6 48 0 .2 5 3-M6 6 PCFMB600E6 PCFMB600E6C Dimension:mm ollector-mitter oltage ate-mitter oltage , ollector ower issipation , unction emperature ange torage emperature ange , (kgfcm) ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 600V, = 0V . = 20V,= 0V . ollector-mitter aturation oltage = 600A,= 15V . . ate-mitter hreshold oltage = 5V,= 600mA . . nput apacitance = 10V,= 0V,= 1MH 30,000 witching ime = = = = . . . . . . . . ise urn-on all urn-off ime ime ime ime orward urrent 300V 0.5 2.0 15V eak orward oltage everse ecovery ime , . . . = 600A,= 0V . . = 600A,= -10V i/t= 1200A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc 00 http://store.iiic.cc/ Fig.1- Output Characteristics (Typical) Fig.2- Output Characteristics (Typical) T C=25C 1200 VGE=20V VGE=20V 12V 15V 1000 T C=125C 1200 12V 15V 1000 800 600 10V 400 11V Collector Current I C (A) Collector Current I C (A) 11V 9V 800 200 600 10V 400 9V 200 8V 8V 0 0 1 2 3 4 0 5 0 1 Collector to Emitter Voltage VCE (V) 1200A 600A 12 10 8 6 4 2 0 0 4 8 12 16 IC=300A 14 600A 10 8 6 4 2 0 20 0 4 8 12 250 10 VCE =300V 8 200V 6 100V 100 20 4 VGE=0V f=1MHZ T C=25C 100000 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) 14 300 Cies 30000 Coes 10000 Cres 3000 1000 2 50 0 300000 Capacitance C (pF) RL =0.5( TC=25C 150 16 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 200 12 Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 350 1200A 12 Gate to Emitter Voltage VGE (V) 400 5 T C=125C 16 Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) IC=300A 4 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 14 3 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 2 0 500 1000 1500 2000 0 2500 300 0.1 Total Gate Charge Qg (nC) 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 http://store.iiic.cc/ Fig.7- Collector Current vs. Switching Time (Typical) 1 0.6 tf 0.4 2 tON 0.2 0 1 0.5 toff 0.2 ton tr (V CE) tf 0.1 0.05 tr(V CE) 0 VCC=300V IC=600A VGE=15V T C=25C Resistive Load 5 Switching Time t (s) Switching Time t (s) 10 VCC=300V RG=2.0 ( VGE=15V T C=25C Resistive Load tOFF 0.8 Fig.8- Series Gate Impedance vs. Switching Time (Typical) 150 300 450 600 750 0.02 900 1 3 Collector Current IC (A) tON tf 0.1 tr(Ic) VCC=300V IC=600A VGE=15V T C=125C Inductive Load 5 2 Switching Time t (s) Switching Time t (s) Fig.10- Series Gate Impedance vs. Switching Time 10 VCC=300V RG=2.0( VGE=15V T C=125C Inductive Load tOFF 1 30 Series Gate Impedance RG (( ) Fig.9- Collector Current vs. Switching Time 10 10 0.01 1 0.5 toff 0.2 ton tr(IC ) tf 0.1 0.05 0.001 0 150 300 450 600 750 0.02 900 1 3 Collector Current IC (A) Fig.11- Collector Current vs. Switching Loss 1000 VCC=300V RG=2.0( VGE=15V T C=125C Inductive Load 60 EOFF EON 40 ERR 20 0 150 300 450 600 750 900 Switching Loss ESW (mJ/Pulse) Switching Loss ESW (mJ/Pulse) 30 Fig.12- Series Gate Impedance vs. Switching Loss 80 0 10 Series Gate Impedance RG (( ) VCC=300V IC=600A VGE=15V T C=125C Inductive Load 300 EON 100 EOFF 30 ERR 10 3 1 1 Collector Current IC (A) 3 10 30 Series Gate Impedance RG (( ) 00 http://store.iiic.cc/ Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) T C=25C Fig.14- Reverse Recovery Characteristics (Typical) 1000 800 600 400 200 1 2 3 500 trr 200 100 IRrM 50 20 4 0 600 1200 Forward Voltage VF (V) 1800 2400 3000 3600 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 5000 RG=2.0 ( , VGE=15V, T C<125C 2000 1000 500 Collector Current I C (A) 0 200 100 50 20 10 5 2 1 0.5 0.2 0.1 0 200 400 600 800 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 1000 0 IF=600A T C=25C T C=125C T C=125C Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 1200 3x10 -1 FRD 1x10 -1 IGBT 3x10 -2 1x10 -2 3x10 -3 T C=25C 1x10 -3 1 Shot Pulse 3x10 -4 10 -5 10-4 10-3 10 -2 10 -1 1 10 1 Time t (s) 00 http://store.iiic.cc/