CM1800HC-34N - Powerex, Inc. - PA

Single IGBTMOD™

HVIGBT Module

1800 Amperes/1700 Volts

CM1800HC-34N

1Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

Outline Drawing and Circuit Diagram

4(C) 2(C)

3(E)

1(E)

K (4 TYP)

M (3 TYP)

(6 PLACES)

Dimensions Inches Millimeters

A 5.19±0.02 130.0±0.5

B 5.51±0.02 140.0±0.5

C 4.88±0.01 124.0±0.25

D 2.24±0.01 57.0±0.25

E 1.57±0.008 40.0±0.2

F 0.79±0.004 20.0±0.1

G 1.92±0.008 48.8±0.2

H 0.42±0.008 10.65±0.2

J 0.41±0.008 10.35±0.2

K M8 Metric M8

L 0.28 Dia. 7.0 Dia.

Description:

Powerex IGBTMOD™ Modules

are designed for use in switching

applications. Each module consists

of one IGBT Transistor in a

reverse-connected super-fast

recovery free-wheel diode.

All components and interconnects

are isolated from the heat sinking

baseplate, offering simplified

system assembly and thermal

management.

Features:

£ Low Drive Power

£ Low VCE(sat)

£ Super-Fast Recovery

Free-Wheel Diode

£ Isolated Baseplate for Easy

Heat Sinking

Applications:

£ Traction

£ Medium Voltage Drives

£ High Voltage Power Supplies

Ordering Information:

Example: Select the complete

part module number you desire

from the table below -i.e.

CM1800HC-34N is a 1700V

(VCES), 1800 Ampere Single

IGBTMOD™ Power Module.

Type Current Rating VCES

Amperes Volts (x 50)

CM 1800 34

Dimensions Inches Millimeters

M M4 Metric M4

N 2.42±0.012 61.5±0.3

P 1.50+0.04/-0.0 38.0+1.0/-0.0

Q 0.2±0.008 5.0±0.2

R 0.65 Min. 16.5 Min.

S 0.30 Min. 7.7 Min.

T 0.71±0.008 18.0±0.2

U 1.16±0.02 29.5±0.5

V 0.60±0.008 15.0±0.2

W 0.21±0.008 5.2±0.2

X 1.10+0.04/-0.0 28.0+1.0/-0.0

CM1800HC-34N

Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

2 Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol CM1800HC-34N Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature Tstg -40 to 125 °C

Operating Temperature T

opr -40 to 125 °C

Collector-Emitter Voltage (VGE = 0V) VCES 1700 Volts

Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts

Collector Current (DC, Tc = 75°C) IC 1800 Amperes

Peak Collector Current (Pulse) ICM 3600* Amperes

Emitter Current** (Tc = 25°C) IE 1800 Amperes

Emitter Surge Current** (Pulse) IEM 3600* Amperes

Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C) PC 10000 Watts

Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb

Max. Mounting Torque M6 Mounting Screws – 53 in-lb

Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb

Module Weight (Typical) – 0.8 kg

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Viso 4000 Volts

Maximum Turn-Off Switching Current (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 3600 Amperes

Short Circuit Capability, Maximum Pulse Width (VCC ≤ 1200V, VGE = ±15V, Tj = 125°C) – 10 µs

Maximum Reverse Recovery Instantaneous Power – 750 kW

(VCC ≤ 1200V, die/dt ≤ 4200A/µs, Tj = 125°C)

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Toprmax rating (125°C).

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

CM1800HC-34N

Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

3Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

Static Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current ICES V

CE = VCES, VGE = 0V, Tj = 25°C – – 6.0 mA

CE = VCES, VGE = 0V, Tj = 125°C – 4.5 12.0 mA

Gate-Emitter Threshold Voltage VGE(th) I

C = 180mA, VCE = 10V 6.0 7.0 8.0 Volts

Gate Leakage Current IGES V

GE = VGES, VCE = 0V – – 0.5 µA

Collector-Emitter Saturation Voltage VCE(sat) I

C = 1800A, VGE = 15V, Tj = 25°C – 2.15 2.8 Volts

C = 1800A, VGE = 15V, Tj = 125°C – 2.4 – Volts

Input Capacitance Cies V

CE = 10V, VGE = 0V, – 264 – nF

Output Capacitance Coes f = 100kHz, – 14.4 – nF

Reverse Transfer Capacitance Cres T

j = 25°C – 4.2 – nF

Total Gate Charge QG V

CC = 850V, IC = 1800A, VGE = 15V – 10.2 – µC

Emitter-Collector Voltage** VEC I

E = 1800A, VGE = 0V, Tj = 25°C – 2.6 3.3 Volts

E = 1800A, VGE = 0V, Tj = 125°C – 2.3 – Volts

Turn-On Delay Time td(on) V

CC = 850V, IC = 1800A, – 1.0 – µs

Turn-On Rise Time tr V

GE1 = -VGE2 = 15V, RG(on) = 0.9Ω, – 0.4 – µs

Turn-On Switching Energy Eon Inductive Load – 550 – mJ/P

Turn-Off Delay Time td(off) V

CC = 850V, IC = 1800A, – 1.2 – µs

Turn-Off Fall Time tf V

GE1 = -VGE2 = 15V, RG(off) = 2.2Ω, – 0.3 – µs

Turn-Off Switching Energy Eoff Inductive load – 560 – mJ/P

Reverse Recovery Time** Irr V

CC = 850V, IE = 1800A, – 720 – Amperes

Reverse Recovery Time** trr die/dt = -3700A/µs, – 1.0 – µs

Reverse Recovery Charge** Qrr T

j = 125°C, – 420 – µC

Reverse Recovery Energy** Erec Inductive Load – 280 – mJ/P

* Pulse width and repetition rate should be such that device junction temperature rise is negligible.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Thermal Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 12.5 K/kW

Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 28.0 K/kW

Contact Thermal Resistance, Case to Fin Rth(c-f) Per Module, Thermal Grease Applied – 11.0 – K/kW

Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Comparative Tracking Index CTI – 600 – – –

Clearance – – 19.5 – – mm

Creepage Distance – – 32.0 – – mm

Internal Inductance LC-E(int) – – 16 – nH

Internal Lead Resistance RC-E(int) – – 0.14 – mΩ

CM1800HC-34N

Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

4 Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

COLLECTOR CURRENT, IC, (AMPERES)

OUTPUT CHARACTERISTICS

(TYPICAL)

800

400

1600

1200

3600

0635412

COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)

Tj = 25°C

2000

2400

2800

3200

VGE = 20V

10V

12V

15V

8V 0.5

1. 0

1. 5

4.0

3.5

3.0

FREE-WHEEL DIODE FORWARD

CHARACTERISTICS (TYPICAL)

0 400030001000 2000

VGE = 0V

Tj = 25°C

Tj = 125°C

2.0

2.5

100

200

700

600

500

0 400030001000 2000

300

400

COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS)

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

VCC = 850V

VGE = ±15V

RG = 0.9Ω

LS = 100nH

Tj = 125°C

100

200

700

600

500

0 400030001000 2000

300

400

100

200

700

600

500

0108624

300

400

VCC = 850V

VGE = ±15V

RG = 0.9Ω

LS = 100nH

Tj = 125°C

REVERSE RECOVERY ENERGY, Erec, (mJ/PULSE)

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE REVERSE RECOVERY

ENERGY CHARACTERISTICS (TYPICAL)

VCC = 850V

VGE = ±15V

IC = 1800A

LS = 100nH

Tj = 125°C

100

200

700

600

500

0108624

300

400

VCC = 850V

VGE = ±15V

IC = 1800A

LS = 100nH

Tj = 125°C

800

400

1200

3600

614879 0 300020001000 400013121110

2400

2000

1600

2800

3200

REVERSE RECOVERY ENERGY, Erec, (J/PULSE)

GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω)

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CHARGE, Qrr, (J/PULSE)

EMITTER CURRENT, IE, (AMPERES)

FREE-WHEEL DIODE REVERSE RECOVERY

CHARGE CHARACTERISTICS (TYPICAL)

REVERSE RECOVERY CHARGE, Qrr, (J/PULSE)

COLLECTOR CURRENT, IC, (AMPERES)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

TRANSFER CHARACTERISTICS

(TYPICAL)

Tj = 25°C

Tj = 125°C

VCE = 20V

SWITCHING TIME, td(on), (ns)

TURN-ON DELAY TIME VS.

COLLECTOR CURRENT

(TYPICAL)

101

100

10-1

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, td(off), (ns)

TURN-OFF DELAY TIME VS.

COLLECTOR CURRENT

(TYPICAL)

VCC = 850V

VGE = ±15V

RG(off) = 2.2Ω

RG(on) = 0.9Ω

LS = 100nH

Tj = 125°C

0 300020001000 4000

101

100

10-1

VCC = 850V

VGE = ±15V

RG(off) = 2.2Ω

RG(on) = 0.9Ω

LS = 100nH

Tj = 125°C

COLLECTOR CURRENT, IC, (AMPERES)

CM1800HC-34N

Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

5Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, tf, (ns)

FALL TIME VS.

COLLECTOR CURRENT

(TYPICAL)

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING TIME, tr, (ns)

RISE TIME VS.

COLLECTOR CURRENT

(TYPICAL)

2000

800

400

1200

1600

4000300020001000

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, Eoff, (mJ/PULSE)

SWITCHING LOSS (OFF) VS.

COLLECTOR CURRENT

(TYPICAL)

COLLECTOR CURRENT, IC, (AMPERES)

SWITCHING LOSS, Eon, (mJ/PULSE)

SWITCHING LOSS (ON) VS.

COLLECTOR CURRENT

(TYPICAL)

SWITCHING LOSS, Eoff, (mJ/PULSE)

GATE RESISTANCE, RG, (Ω)

SWITCHING LOSS, Eon, (mJ/PULSE)

GATE RESISTANCE, RG, (Ω)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

CAPACITANCE, Cies, Coes, Cres, (pF)

10-1 100101102

CAPACITANCE VS.

COLLECTOR-EMITTER VOLTAGE

(TYPICAL)

103

101

100

102

Cies

Coes

Cres

VGE = 15V

f = 100kHz

Tj = 25°C

COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

VCC = 850V

VGE = ±15V

RG(off) = 2.2Ω

RG(on) = 0.9Ω

LS = 100nH

Tj = 125°C

2000

800

400

1200

1600

40003000200010000

VCC = 850V

VGE = ±15V

RG(off) = 2.2Ω

RG(on) = 0.9Ω

LS = 100nH

Tj = 125°C

3500

2500

2000

1500

3000

1000

500

1068420

3500

2500

2000

1500

3000

1000

500

1068420

4.0

2.5

2.0

1.5

3.0

3.5

1.0

0.5

40003000200010000

VCC = 850V

VGE = ±15V

IC = 1800A

LS = 100nH

Tj = 125°C

VCC = 850V

VGE = ±15V

IC = 1800A

LS = 100nH

Tj = 125°C

VGE = 15V

Tj = 25°C

Tj = 125°C

SWITCHING LOSS (OFF) VS.

GATE RESISTANCE

(TYPICAL)

SWITCHING LOSS (ON) VS.

GATE RESISTANCE

(TYPICAL)

VCC = 850V

VGE = ±15V

RG(off) = 2.2Ω

RG(on) = 0.9Ω

LS = 100nH

Tj = 125°C

VCC = 850V

VGE = ±15V

RG(off) = 2.2Ω

RG(on) = 0.9Ω

LS = 100nH

Tj = 125°C

GATE CHARGE, QG, (nC)

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

GATE CHARGE, VGE

02468101214

0300020001000 4000

101

100

10-1

0300020001000 4000

101

100

10-1

IC = 1200A

VCC = 850V

Tj = 25°C

CM1800HC-34N

Single IGBTMOD™ HVIGBT Module

1800 Amperes/1700 Volts

6 Rev. 4/09

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272

TIME, (s)

TRANSIENT IMPEDANCE, Rth(j-c)

10-3 10-2 10-1 100101

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT & FWDI)

1.2

1.0

0.4

0.2

0.6

0.8

SINGLE PULSE

TC = 25°C

IGBT = Rth(j-c)Q =

12.5°K/kW

FWDI = Rth(j-c)D =

28°K/kW

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY

SAFE OPERATING AREA

(TYPICAL)

2000150010005000

COLLECTOR CURRENT, IC, (AMPERES)

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

REVERSE BIAS

SAFE OPERATING AREA

(TYPICAL)

4500

4000

3000

3500

2000

2500

1000

1500

500

4500

4000

3000

3500

2000

2500

1000

1500

500

2000150010005000

VCC ≤ 1200V

VGE = ±15V

RG ≥ 2.2Ω

Tj = 125°C

VCC ≤ 1200V

di/dt ≤ 4200A/µs

Tj = 125°C