MBT3904DW1T1/D - ON Semiconductor

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Dual General Purpose Transistors

The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are

spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed

for general purpose amplifier applications and are housed in the SOT–363 six–leaded

surface mount package. By putting two discrete devices in one package, these

devices are ideal for low–power surface mount applications where board space is at

a premium.

•hFE, 100–300

•Low VCE(sat), ≤ 0.4 V

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP) VCEO 40

–40 Vdc

Collector–Base Voltage MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP) VCBO 60

–40 Vdc

Emitter–Base Voltage MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP) VEBO 6.0

–5.0 Vdc

Collector Current — Continuous

MBT3904DW1T1 (NPN)

MBT3906DW1T1 (PNP)

IC200

–200

mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Package Dissipation(1)

TA = 25°CPD150 mW

Thermal Resistance Junction to Ambient R

JA 833 °C/W

Junction and Storage Temperature TJ, Tstg –55 to

+150 °C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

1. recommended footprint.

DEVICE MARKING

MBT3904DW1T1 = MA MBT3946DW1T1 = 46

MBT3906DW1T1 = A2

Thermal Clad is a trademark of the Bergquist Company.

Order this document

by MBT3904DW1T1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MBT3904DW1T1

MBT3906DW1T1

MBT3946DW1T1

CASE 419B–01, STYLE 1

123

654

MBT3904DW1T1

MBT3906DW1T1

MBT3946DW1T1

(1)(2)

(3)

(4) (5) (6)

MBT3904DW1T1

(1)(2)

(3)

(4) (5) (6)

MBT3906DW1T1

(1)(2)

(3)

(4) (5) (6)

MBT3946DW1T1*

*Q1 same as MBT3906DW1T1

Q2 same as MBT3904DW1T1

 Motorola, Inc. 1997

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(2)

(IC = 1.0 mAdc, IB = 0) MBT3904DW1T1 (NPN)

(IC = –1.0 mAdc, IB = 0) MBT3906DW1T1 (PNP)

V(BR)CEO 40

–40 —

—

Vdc

Collector–Base Breakdown Voltage

(IC = 10

Adc, IE = 0) MBT3904DW1T1 (NPN)

(IC = –10

Adc, IE = 0) MBT3906DW1T1 (PNP)

V(BR)CBO 60

–40 —

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10

Adc, IC = 0) MBT3904DW1T1 (NPN)

(IE = –10

Adc, IC = 0) MBT3906DW1T1 (PNP)

V(BR)EBO 6.0

–5.0 —

—

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) MBT3904DW1T1 (NPN)

(VCE = –30 Vdc, VEB = –3.0 Vdc) MBT3906DW1T1 (PNP)

IBL —

—50

–50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) MBT3904DW1T1 (NPN)

(VCE = –30 Vdc, VEB = –3.0 Vdc) MBT3906DW1T1 (PNP)

ICEX —

—50

–50

nAdc

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc) MBT3904DW1T1 (NPN)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

(IC = –0.1 mAdc, VCE = –1.0 Vdc) MBT3906DW1T1 (PNP)

(IC = –1.0 mAdc, VCE = –1.0 Vdc)

(IC = –10 mAdc, VCE = –1.0 Vdc)

(IC = –50 mAdc, VCE = –1.0 Vdc)

(IC = –100 mAdc, VCE = –1.0 Vdc)

hFE 40

100

—

300

—

300

—

Collector–Emitter Saturation V oltage

(IC = 10 mAdc, IB = 1.0 mAdc) MBT3904DW1T1 (NPN)

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = –10 mAdc, IB = –1.0 mAdc) MBT3906DW1T1 (PNP)

(IC = –50 mAdc, IB = –5.0 mAdc)

VCE(sat) —

—

0.2

0.3

–0.25

–0.4

Vdc

Base–Emitter Saturation V oltage

(IC = 10 mAdc, IB = 1.0 mAdc) MBT3904DW1T1 (NPN)

(IC = 50 mAdc, IB = 5.0 mAdc)

(IC = –10 mAdc, IB = –1.0 mAdc) MBT3906DW1T1 (PNP)

(IC = –50 mAdc, IB = –5.0 mAdc)

VBE(sat) 0.65

—

–0.65

—

0.85

0.95

–0.85

–0.95

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MBT3904DW1T1 (NPN)

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) MBT3906DW1T1 (PNP)

fT300

250 —

—

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)

(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP)

Cobo —

—4.0

4.5

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP)

Cibo —

—8.0

10.0

2. Pulse Test: Pulse Width ≤300 µs; Duty Cycle ≤2.0%.

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN)

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)

hie 1.0

2.0 10

k Ω

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN)

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)

hre 0.5

0.1 8.0

X 10–4

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN)

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)

hfe 100

100 400

400

—

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN)

(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MBT3906DW1T1 (PNP)

hoe 1.0

3.0 40

mhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100

Adc, RS = 1.0 k Ω, f = 1.0 kHz) MBT3904DW1T1 (NPN)

(VCE = –5.0 Vdc, IC = –100

Adc, RS = 1.0 k Ω, f = 1.0 kHz) MBT3906DW1T1 (PNP)

NF —

—5.0

4.0

SWITCHING CHARACTERISTICS

Delay T ime (VCC = 3.0 Vdc, VBE = –0.5 Vdc) MBT3904DW1T1 (NPN)

(VCC = –3.0 Vdc, VBE = 0.5 Vdc) MBT3906DW1T1 (PNP) td—

—35

Rise T ime (IC = 10 mAdc, IB1 = 1.0 mAdc) MBT3904DW1T1 (NPN)

(IC = –10 mAdc, IB1 = –1.0 mAdc) MBT3906DW1T1 (PNP) tr—

—35

Storage T ime (VCC = 3.0 Vdc, IC = 10 mAdc) MBT3904DW1T1 (NPN)

(VCC = –3.0 Vdc, IC = –10 mAdc) MBT3906DW1T1 (PNP) ts—

—200

225

Fall T ime (IB1 = IB2 = 1.0 mAdc) MBT3904DW1T1 (NPN)

(IB1 = IB2 = –1.0 mAdc) MBT3906DW1T1 (PNP) tf—

—50

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 (NPN)

Figure 1. Delay and Rise Time

Equivalent Test Circuit Figure 2. Storage and Fall Time

Equivalent Test Circuit

275

10 k

1N916 Cs < 4 pF*

275

10 k

Cs < 4 pF*

< 1 ns

–0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

–9.1 V′

+10.9 V

DUTY CYCLE = 2% t1

10 < t1 < 500

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

1.00.1

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

Cibo

Cobo

TJ = 25°C

TJ = 125°C

MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 (NPN)

Figure 5. Turn–On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

Figure 6. Rise Time

IC, COLLECTOR CURRENT (mA)

TIME

(

1.0 2.0 3.0 10 20 70

5100

t , RISE TIME (ns)

Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

AGE TIME

(

′

VCC = 40 V

IC/IB = 10

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

IC/IB = 10

IC/IB = 20

IC/IB = 10

IC/IB = 20 t′s = ts – 1/8 tf

IB1 = IB2

MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 9. Noise Figure

f, FREQUENCY (kHz)

0.1

Figure 10. Noise Figure

RS, SOURCE RESISTANCE (k OHMS)

E FIGU

)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA IC = 50

IC = 100

SOURCE RESISTANCE = 200

IC = 1.0 mA

SOURCE RESISTANCE = 200

IC = 0.5 mA

SOURCE RESISTANCE = 500

IC = 100

SOURCE RESISTANCE = 1.0 k

IC = 50

MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 (NPN)

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 11. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

Figure 12. Output Admittance

IC, COLLECTOR CURRENT (mA)

T GAI

h , OUTPUT ADMITTANCE ( mhos)

Figure 13. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 14. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5 10

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (x 10 )

UT IM

EDA

(

k OHM

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

–4

MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 (NPN)

TYPICAL STATIC CHARACTERISTICS

Figure 15. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

h , DC CURRENT GAIN (NORMALIZED)

0.5 2.0 3.0 10 50 70

0.2 0.3

0.1 100

1.00.7 200

30205.0 7.0

VCE = 1.0 V

TJ = +125°C

+25°C

–55°C

MBT3904DW1T1 (NPN)

Figure 16. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

MBT3904DW1T1 (NPN)

Figure 17. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 18. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

VOLTAGE

(

VOLT

1.0 2.0 5.0 10 20 50

0100

–0.5

0.5

0 60 80 120 140 160 180

20 40 100

COEFFICIENT (mV/ C)

200

–1.0

–1.5

–2.0

200

TJ = 25°CVBE(sat) @ IC/IB =10

VCE(sat) @ IC/IB =10

VBE @ VCE =1.0 V

+25°C TO +125°C

–55°C TO +25°C

+25°C TO +125°C

–55°C TO +25°C

VC FOR VCE(sat)

VB FOR VBE(sat)

MBT3904DW1T1 (NPN) MBT3904DW1T1 (NPN)

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

8 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3906DW1T1 (PNP)

Figure 19. Delay and Rise Time

Equivalent Test Circuit Figure 20. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916 Cs < 4 pF*

3 V

275

10 k

Cs < 4 pF*

< 1 ns

+0.5 V

10.6 V 300 ns

DUTY CYCLE = 2%

< 1 ns

+9.1 V

10.9 V

DUTY CYCLE = 2% t1

10 < t1 < 500

* T otal shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

Figure 21. Capacitance

REVERSE BIAS (VOLTS)

2.0

3.0

5.0

7.0

1.00.1

Figure 22. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

QTQA

Cibo

Cobo

TJ = 25°C

TJ = 125°C

MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)

Figure 23. Turn–On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

TIME

(

1.0 2.0 3.0 10 20 70

5100

Figure 24. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3906DW1T1 (PNP)

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = –5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 25.

f, FREQUENCY (kHz)

2.0

3.0

4.0

1.0

0.1

Figure 26.

Rg, SOURCE RESISTANCE (k OHMS)

E FIGU

)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50

IC = 100

SOURCE RESISTANCE = 200

IC = 1.0 mA

SOURCE RESISTANCE = 200

IC = 0.5 mA

SOURCE RESISTANCE = 2.0 k

IC = 100

SOURCE RESISTANCE = 2.0 k

IC = 50

MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)

h PARAMETERS

(VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 27. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

Figure 28. Output Admittance

IC, COLLECTOR CURRENT (mA)

T GAI

h , OUTPUT ADMITTANCE ( mhos)

Figure 29. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 30. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5 10

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

UT IM

EDA

(

k OHM

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.7 7.0

7.0

3.0

0.7

0.3

0.7 7.0

h , VOLTAGE FEEDBACK RATIO (x 10 )

re –4

MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

10 Motorola Small–Signal Transistors, FETs and Diodes Device Data

MBT3906DW1T1 (PNP)

TYPICAL STATIC CHARACTERISTICS

Figure 31. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

h , DC CURRENT GAIN (NORMALIZED)

0.5 2.0 3.0 10 50 70

0.2 0.3

0.1 100

1.00.7 200

30205.0 7.0

VCE = 1.0 V

TJ = +125°C

+25°C

–55°C

MBT3906DW1T1 (PNP)

Figure 32. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

MBT3906DW1T1 (PNP)

Figure 33. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

0.2

Figure 34. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

VOLTAGE

(

VOLT

1.0 2.0 5.0 10 20 50

0100

–0.5

0.5

0 60 80 120 140 160 180

20 40 100 200

–1.0

–1.5

–2.0

200

TJ = 25°C VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V +25°C TO +125°C

–55°C TO +25°C

+25°C TO +125°C

–55°C TO +25°C

VC FOR VCE(sat)

VB FOR VBE(sat)

, TEMPERATURE COEFFICIENTS (mV/ C)°

MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP)

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must

be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT–363

ÉÉÉ

0.5 mm (min)

0.4 mm (min)

0.65 mm 0.65 mm

1.9 mm

SOT–363 POWER DISSIPATION

The power dissipation of the SOT–363 is a function of the

pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipation.

Power dissipation for a surface mount device is determined

by TJ(max), the maximum rated junction temperature of the

die, RθJA, the thermal resistance from the device junction to

ambient, and the operating temperature, TA. Using the

values provided on the data sheet for the SOT–363 package,

PD can be calculated as follows:

PD = TJ(max) – TA

RθJA

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values into

the equation for an ambient temperature T A of 25°C, one can

calculate the power dissipation of the device which in this

case is 150 milliwatts.

PD = 150°C – 25°C

833°C/W = 150 milliwatts

The 833°C/W for the SOT–363 package assumes the use

of the recommended footprint on a glass epoxy printed circuit

board to achieve a power dissipation of 150 milliwatts. There

are other alternatives to achieving higher power dissipation

from the SOT–363 package. Another alternative would be to

use a ceramic substrate or an aluminum core board such as

Thermal Clad. Using a board material such as Thermal

Clad, an aluminum core board, the power dissipation can be

doubled using the same footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated

temperature of the device. When the entire device is heated

to a high temperature, failure to complete soldering within a

short time could result in device failure. Therefore, the

following items should always be observed in order to

minimize the thermal stress to which the devices are

subjected.

•Always preheat the device.

•The delta temperature between the preheat and soldering

should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method,

the difference shall be a maximum of 10°C.

•The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the maximum

temperature gradient shall be 5°C or less.

•After soldering has been completed, the device should be

allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and result

in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive

thermal shock and stress which can result in damage to the

device.

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

12 Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

CASE 419B-01

ISSUE C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM

AMIN MAX MIN MAX

MILLIMETERS

1.80 2.200.071 0.087

INCHES

B1.15 1.350.045 0.053

C0.80 1.100.031 0.043

D0.10 0.300.004 0.012

G0.65 BSC0.026 BSC

H––– 0.10–––0.004

J0.10 0.250.004 0.010

K0.10 0.300.004 0.012

N0.20 REF0.008 REF

S2.00 2.200.079 0.087

V0.30 0.400.012 0.016

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

B0.2 (0.008) MM

123

654

–B–

D6 PL

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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

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MBT3904DW1T1/D

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