This is information on a product in full production.
September 2013 DocID16558 Rev 13 1/20
20
2N2222AHR
Hi-Rel 40 V, 0.8 A NPN transistor
Datasheet
-
production data
Figure 1. Internal schematic diagramI
Features
•Hermetic packages
•ESCC and JANS qualified
•Up to 100 krad(Si) low dose ratee
Description
The 2N2222AHR is a silicon planar NPN
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
TO-18
LCC-3
3
1
2
UB
3
1
2
3
1
2
4
Pin 4 in LCC-3UB is connected to the metallic lid.
Parameter ESCC JANS
BV
CEO min
40 V 50 V
I
C
(max) 0.8 A
h
FE
at 10 V - 150 mA 100
Table 1. Device summary
Device Qualification
system Agency
specification Package Radiation level EPPL
JANSR2N2222AUBx JANSR MIL-PRF-19500/291 UB 100 krad HDR -
JANS2N2222AUBx JANS MIL-PRF-19500/291 UB - -
2N2222ARUBx ESCC 5201/002 UB 100 krad ESCC Target
2N2222AUB1xSW ESCC 5201/002 UB 100 krad SW -
2N2222AUB1x ESCC 5201/002 UB - Target
SOC2222ARHRx ESCC 5201/002 LCC-3 100 krad ESCC Yes
SOC2222ASW ESCC 5201/002 LCC-3 100 krad SW -
SOC2222AHRB ESCC 5201/002 LCC-3 - Yes
2N2222ARHRx ESCC 5201/002 TO-18 100 krad ESCC Target
2N2222ASW ESCC 5201/002 TO-18 100 krad SW -
2N2222AHR ESCC 5201/002 TO-18 - -
www.st.com
Contents 2N2222AHR
2/20 DocID16558 Rev 13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.3 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Radiation hardness assurance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.1 Date code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6.2 Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID16558 Rev 13 3/20
2N2222AHR Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CBO
Collector-base voltage (I
E
= 0) 75 V
V
CEO
Collector-emitter voltage (I
B
= 0) for JANS devices 50 V
Collector-emitter voltage (I
B
= 0) for ESCC devices 40 V
V
EBO
Emitter-base voltage (I
C
= 0) 6 V
I
C
Collector current 0.8 A
P
TOT
Total dissipation at T
amb
≤ 25 °C
ESCC: TO-18
LCC-3 and UB
LCC-3 and UB
(1)
JANS: LCC-3UB
Total dissipation at T
case
≤ 25 °C
ESCC: TO-18
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
0.5
0.5
0.73
0.5
1.8
W
Total dissipation at T
sp(IS)
= 25 °C
JANS: UB 1 W
T
STG
Storage temperature -65 to 200 °C
T
J
Max. operating junction temperature 200 °C
Table 3. Thermal data
Symbol Parameter LCC-3
and UB TO-18 Unit
R
thJC
Thermal resistance junction-case (max) for JANS - -
°C/W
Thermal resistance junction-case (max) for ESCC - 97
Rt
hJSP(IS)
Thermal resistance junction-solder pad (infinite
sink) (max) for JANS 90 -
Thermal resistance junction-solder pad (infinite
sink) (max) for ESCC --
R
thJA
Thermal resistance junction-ambient (max) for
JANS 325 -
Thermal resistance junction-ambient (max) for
ESCC
350
240
(1)
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
350
Ele ctrical characteristics 2N2222AHR
4/20 DocID16558 Rev 13
2 Electrical characteristics
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provided in dedicated tables.
T
case
= 25 °C unless otherwise specified.
2.1 JANS electrical characteristics
Table 4. JANS electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0)
V
CB
= 75 V
V
CB
= 60 V
V
CB
= 60 V T
amb
= 150 °C
-
10
10
10
μA
nA
μA
I
CES
Collector cut-off
current
(I
E
= 0)
V
CE
= 50 V - 50 nA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 6 V
V
EB
= 4 V -10
10
μA
nA
V
(BR)CEO (1)
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 10 mA 50 - V
V
CE(sat) (1)
Collector-emitter
saturation voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA -0.3
1
V
V
V
BE(sat) (1)
Base-emitter
saturation voltage
I
C
= 150 mA I
B
= 15 mA
I
C
= 500 mA I
B
= 50 mA
0.6 1.2
2
V
V
h
FE (1)
DC current gain
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
T
amb
= -55 °C
50
75
100
100
30
35
-
325
300
h
fe
Small signal current
gain
V
CE
= 20 V I
C
= 20 mA
f = 100 MHz
V
CE
= 10 V I
C
=1 mA
f = 1 kHz
2.5
50 -
C
obo
Output capacitance
(I
E
= 0)
V
CB
= 10 V
100 kHz ≤ f ≤ 1 MHz -8pF
C
ibo
Output capacitance
(I
E
= 0)
V
EB
= 0.5 V
100 kHz ≤ f ≤ 1 MHz -25pF
DocID16558 Rev 13 5/20
2N2222A HR Electri cal chara ct er istics
2.2 ESCC electrical characteristics
t
on
Turn-on time V
CC
= 30 V I
C
= 150 mA
I
B1
= 15 mA -35ns
t
off
Turn-off time V
CC
= 30 V I
C
= 150 mA
I
B1
= -I
B2
= 15 mA - 300 ns
1. Pulsed duration = 300 μs, duty cycle ≤ 2 %
Table 4. JANS electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Table 5. ESCC electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0)
V
CB
= 60 V
V
CB
= 60 V T
amb
= 150 °C -10
10
nA
μA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 3 V - 10 nA
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= 100 μA75-V
V
(BR)CEO (1)
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 30 mA 40 - V
V
(BR)EBO
Emitter-base
breakdown voltage
(I
C
= 0)
I
E
= 100 μA6-V
V
CE(sat) (1)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA - 0.3 V
V
BE(sat) (1)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 0.87 1.2 V
h
FE (1)
DC current gain
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
T
amb
= -55 °C
35
75
100
40
35
-300
h
fe
Small signal current
gain
V
CE
= 20 V I
C
= 20 mA
f = 100 MHz 3-10
C
obo
Output capacitance
(I
E
= 0)
V
CB
= 10 V
100 kHz ≤ f ≤ 1 MHz -8pF
Ele ctrical characteristics 2N2222AHR
6/20 DocID16558 Rev 13
2.3 Electrical characteristics (curves)
t
on
Turn-on time V
CC
= 30 V I
C
= 150 mA
I
B1
= 15 mA -35ns
t
off
Turn-off time V
CC
= 30 V I
C
= 150 mA
I
B1
= -I
B2
= 15 mA - 285 ns
1. Pulsed duration = 300 μs, duty cycle ≤ 2 %
Table 5. ESCC electrical characteristics (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Figure 2. DC current gain Figure 3. Collector emitter saturation
voltage
Figure 4. Base emitter saturation voltage
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DocID16558 Rev 13 7/20
2N2222A HR Electri cal chara ct er istics
2.4 Test circuits
Figure 5. JANS saturated turn-on switching time test circuit
Figure 6. JANS saturated turn-off switching time test circ uit
Ele ctrical characteristics 2N2222AHR
8/20 DocID16558 Rev 13
Figure 7. ESCC resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
DocID16558 Rev 13 9/20
2N2222AHR Radiation hardness assurance
3 Radiation hardness assurance
The products guaranteed in radiation within the JANS system fully comply with the MIL-
PRF-19500/255 specification.
The products guaranteed in radiation within the ESCC system fully comply with the ESCC
5201/002 and ESCC 22900 specifications.
JANS radiation assurance
ST JANS parts guaranteed at 100 krad (Si), tested, in full compliancy with the MIL-PRF-
19500 specification, specifically the Group D, subgroup 2 inspection, between 50 and 300
rad/s. A brief summary is provided below:
– All test are performed in accordance to MIL-PRF-19500 and test method 1019 of
MIL-STD-750 for total Ionizing dose.
– Each wafer of each lot is tested. The table below provides for each monitored
parameters of the test conditions and the acceptance criteria
Table 6. MIL-PRF-19500 (test method 1019) post radiation electrical charact eri stics
Symbol Parameter Test conditions Value Unit
Min. Max.
I
CBO
Collector to base
cutoff current
V
CB
= 75 20 μA
V
CB
= 60 V 20 nA
I
EBO
Emitter to base
cutoff current
V
EB
= 6 V 20 μA
V
EB
= 4 V 20 nA
V
(BR)CEO
Breakdown voltage,
collector to emitter I
C
= 10 mA 50 V
I
CES
Collector to emitter
cutoff current V
CE
= 50 V 100 nA
h
FE
Forward-current
transfer ratio
V
CE
= 10 V; I
C
= 0.1 mA [25]
(1)
1. See method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the
pre- and Post-radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The
[h
FE
] value can never exceed the pre-radiation minimum h
FE
that it is based upon.
V
CE
= 10 V; I
C
= 1.0 mA [37.5]
(1)
325
V
CE
= 10 V; I
C
= 10 mA [50]
(1)
V
CE
= 10 V; I
C
= 150 mA [50]
(1)
300
V
CE
= 10 V; I
C
= 500 mA [15]
(1)
V
CE(sat)
Collector-emitter
saturation voltage
I
C
= 150 mA; I
B
= 15 mA 0.35 V
I
C
= 500 mA; I
B
= 50 mA 1.15
V
BE(sat)
Base-emitter
saturation voltage
I
C
= 150 mA; I
B
= 15 mA 0.6 1.38 V
I
C
= 500 mA; I
B
= 50 mA 2.3
Radiation hardness assurance 2N2222AHR
10/20 DocID16558 Rev 13
ESCC radiation assurance
Each product lot is tested according to the ESCC basic specification 22900, with a minimum
of 11 samples per diffusion lot and 5 samples per wafer, one sample being kept as
unirradiated sample, all of them being fully compliant with the applicable ESCC generic
and/or detailed specification.
ST goes beyond the ESCC specification by performing the following procedure:
– Test of 11 pieces by wafer, 5 biased at least 80% of V
(BR)CEO
, 5 unbiased and 1
kept for reference
– Irradiation at 0.1 rad (Si)/s
– Acceptance criteria of each individual wafer if as 100 krad guaranteed if all 10
samples comply with the post radiation electrical characteristics provided in
Table 8
– Delivery together with the parts of the radiation verification test (RVT) report of the
particular wafer used to manufacture the products. This RVT includes the value of
each parameter at 30, 50, 70 and 100 krad (Si) and after 24 hour annealing at
room temperature and after an additional 168 hour annealing at 100°C.
Table 7. Radiation summary
Radiation test 100 krad “SW” 100 krad ESCC
Wafer test each each
Part tested 5 biased 5 biased + 5 unbiased
Dose rate 0.1 rad/s 0.1 rad/s
Acceptance Fixed values
(1)
1. Part numbers with suffix "SW" have same pre and post irradiation electrical
MIL-STD-750 method 1019
Displacement damage Optional Optional
Agency part number (ex) 5202/001/02
(2)
2. Example of the 2N2222A in LCC-3 Gold finish
5202/001/02
(2)
ST part number (ex) SOC2222ASW SOC2222ARHRG
Documents CoC + RVT CoC + RVT
DocID16558 Rev 13 11/20
2N2222AHR Radiation hardness assurance
Table 8. ESCC 5201/002 post radiation electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CBO
Collector cut-off
current (I
E
= 0) V
CB
= 60 V - 10 nA
I
EBO
Emitter cut-off current
(I
C
= 0) V
EB
= 3 V - 10 nA
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
I
C
= 100 μA75-V
V
(BR)CEO(1)
1. Pulsed duration = 300 μs, duty cycle ≤ 2 %
Collector-emitter
breakdown voltage
(I
B
= 0)
I
C
= 30 mA
I
C
= 10 mA
40
50 -V
V
V
(BR)EBO
Emitter-base
breakdown voltage
(I
C
= 0)
I
E
= 100 μA6-V
V
CE(sat) (1)
Collector-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA - 0.3 V
V
BE(sat) (1)
Base-emitter
saturation voltage I
C
= 150 mA I
B
= 15 mA 1.2 V
[h
FE
]
(1)
Post irradiation gain
calculation
(2)
2. The post-irradiation gain calculation of [h
FE
], made using h
FE
measurements from prior to and on
completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750
method 1019.
I
C
= 0.1 mA V
CE
= 10 V
I
C
= 10 mA V
CE
= 10 V
I
C
= 150 mA V
CE
= 10 V
I
C
= 500 mA V
CE
= 10 V
[17.5]
[37.5]
[50]
[20]
-300
Package mechanical data 2N2222AHR
12/20 DocID16558 Rev 13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Table 9. Product mass summary
Package Mass (g)
UB 0.06
LCC-3 0.06
TO-18 0.40
DocID16558 Rev 13 13/20
2N2222AHR Package mechanical data
Figure 8. UB drawings
Table 10. UB mechanica l data
Dim. mm.
Min. Typ. Max.
A 1.16 1.42
C 0.46 0.51 0.56
D 0.56 0.76 0.96
E 0.92 1.02 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.18
I 2.41 2.54 2.67
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.41 0.51 0.61
M 2.46 2.54 2.62
N 1.81 1.91 2.01
r 0.20
r1 0.30
r2 0.56
Package mechanical data 2N2222AHR
14/20 DocID16558 Rev 13
Figure 9. LCC-3 drawings
Table 11. LCC-3 mechanical data
Dim. mm.
Min. Typ. Max.
A 1.16 1.42
C 0.45 0.50 0.56
D 0.60 0.76 0.91
E 0.91 1.01 1.12
F 1.95 2.03 2.11
G 2.92 3.05 3.17
I 2.41 2.54 2.66
J 0.42 0.57 0.72
K 1.37 1.52 1.67
L 0.40 0.50 0.60
M 2.46 2.54 2.62
N 1.80 1.90 2.00
R 0.30
21
3
DocID16558 Rev 13 15/20
2N2222AHR Package mechanical data
Figure 10. TO-18 drawings
Table 12. TO-18 mechanical data
Dim. mm.
Min. Typ. Max.
A 12.7
B 0.49
D 5.3
E 4.9
F 5.8
G 2.54
H1.2
I1.16
L 45°
Order codes 2N2222AHR
16/20 DocID16558 Rev 13
5 Order codes
Table 13. Ordering information
CPN Agency
specification EPPL Quality level Radiation level Package Lead finish Marking
(1)
Packing
J2N2222AUB1 - - Engineering model
JANS - UB Gold J2222AUB1 WafflePack
2N2222AUB1 - - Engineering model
ESCC - UB Gold 2N2222AUB1 WafflePack
SOC2222A - - Engineering model
ESCC - LCC-3 Gold SOC2222A WafflePack
JANSR2N2222AUBG MIL-PRF-19500/255 - JANSR 100 krad HDR UB Gold JSR2222 WafflePack
JANSR2N2222AUBT MIL-PRF-19500/255 - JANSR 100 krad HDR UB Solder Dip JSR2222 WafflePack
JANS2N2222AUBG MIL-PRF-19500/255 - JANS - UB Gold JS2222 WafflePack
JANS2N2222AUBT MIL-PRF-19500/255 - JANS - UB Solder Dip JS2222 WafflePack
2N2222ARUBG 5201/002/11R Target ESCC 100 krad ESCC UB Gold 520100211R WafflePack
2N2222ARUBT 5201/002/12R Target ESCC 100 krad ESCC UB Solder Dip 520100212R WafflePack
2N2222AUB11SW
(2)
5201/002/11 - ESCC 100 krad SW UB Gold 520100211 WafflePack
2N2222AUB12SW
(2)
5201/002/12 - ESCC 100 krad SW UB Solder Dip 520100212 WafflePack
2N2222AUB11 5201/002/11 Target ESCC - UB Gold 520100211 WafflePack
2N2222AUB12 5201/002/12 Target ESCC - UB Solder Dip 520100212 WafflePack
SOC2222ARHRG 5201/002/04R Yes ESCC 100 krad ESCC LCC-3 Gold 520100204R WafflePack
SOC2222ARHRT 5201/002/05R Yes ESCC 100 krad ESCC LCC-3 Solder Dip 520100205R WafflePack
SOC2222ASW
(2)
5201/002/04 or 05
(3)
- ESCC 100 krad SW LCC-3 Gold or
Solder Dip
520100204 or 05
(3)
WafflePack
SOC2222AHRB 5201/002/04 or 05
(3)
Yes ESCC - LCC-3 Gold or
Solder Dip
520100204 or 05
(3)
WafflePack
2N2222ARHRG 5201/002/01R Target ESCC 100 krad ESCC TO-18 Gold 520100201R Strip Pack
2N2222AHR Order codes
DocID16558 Rev 13 17/20
Contact ST sales office for information about the specific conditions for:
– Products in die form
– Other JANS quality levels
– Tape and reel packing
2N2222ARHRT 5201/002/02R Target ESCC 100 krad ESCC TO-18 Solder Dip 520100202R Strip Pack
2N2222ASW
(2)
5201/002/01 or 02
(3)
- ESCC 100 krad SW TO-18 Gold or
Solder Dip
520100201 or 02
(3)
Strip Pack
2N2222AHR 5201/002/01 or 02
(3)
- ESCC - TO-18 Gold or
Solder Dip
520100201 or 02
(3)
Strip Pack
1. Specific marking only. The full marking includes in addition: For the engineering models : ST logo, date code, country of origin (FR). For ESCC flight parts : ST logo, date
code, country of origin (FR), ESA logo, serial number of the part within the assembly lot. For JANS flight parts : ST logo, date code, country of origin (FR), manufacturer
code (CSTM), serial number of the part within the assembly lot.
2. Not recommended for new design.
3. Depending ESCC part number mentioned on the purchase order.
Table 13. Ordering information (continued )
CPN Agency
specification EPPL Quality level Radiation level Package Lead finish Marking
(1)
Packing
Shipping details 2N2222AHR
18/20 DocID16558 Rev 13
6 Shipping details
6.1 Date code
Date code xyywwz is structured as below table:
6.2 Documentation
Table 14. Date code
xyywwz
E M
(ESCC & JANS) 3
last two digits of
the year week digits lot index in the
week
E SC C
FLIGHT -
J A N S
F L I G H T
(diffused in
Singapore)
W
Table 15. Documentation provided for each type of product
Quality level Radiation level Documentation
Engineering model - -
JANS Flight - Certificate of conformance
JANSR Flight 100 krad Certificate of conformance
50 rad/s radiation verification test report
ESCC Flight
- Certificate of conformance
100 krad Certificate of conformance
0.1 rad/s radiation verification test report
DocID16558 Rev 13 19/20
2N2222AHR Revision history
7 Revision history
Table 16. Document revision history
Date Revision Changes
04-Jan-2010 1 Initial release
16-Apr-2010 2 Added Table 1 on page 1
09-Jul-2010 3 Modified: Table 1 on page 1 and Table 12 on page 15
30-Nov-2011 4
– Modified: Table 5 on page 5
– Added: Section 2.3: Electrical characteristics (curves)
– Modified: Table 1 and 2
– Added: Table 2, 11, 12
– Minor text changes in the document title and description on the
cover page.
12-Dec-2011 5 Minor text changes to improve readability
17-Apr-2012 6
Updated:
– Title and description in cover page.
–P
TOT
in Table 2: Absolut e maximum rati ngs.
– The entire Section 2: Electrical characteristics.
–Table 13: Ordering information.
Added:
–Table 3: Thermal data, Section 3: Radiation hardness assur ance
and Table 13: Ordering information.
–Figure 5: JANS saturated turn-on switching time test circuit and
Figure 6: JANS saturated turn-off switching time test circuit.
–Section 6: Shipping details.
19-Apr-2012 7
Updated titles in
Figure 5: JANS saturated turn-on switchi ng time
test circuit and Figure 6: JANS saturated turn-off switching time test
circuit.
24-Apr-2012 8
Updated R
thJA
value in
Table 3: Ther mal data.
14-May-2012 9
Updated
Table 13: Ordering information.
21-Feb-2013 10
Table 1: De vice summary and Table 13: Ord eri ng info rma tio n have
been updated.
Updated text in
Section 3: Radiation hardness assurance.
04-Apr-2013 11 Inserted Table 7: Radiation summ ary
06-Jun-2013 12 Updated package name for UB.
18-Sep-2013 13 Table 1: Device summary and Table 13: Ordering informa tio n have
been updated.
2N2222AHR
20/20 DocID16558 Rev 13
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