DSA 90 C 200HB
preliminary
Schottky
Symbol Definition R a t i n g s
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
typ. max.
I
FSM
I
R
A
mA
V
450
I
FAV
A
V
F
0.96
R
thJC
0.55 K/W
V
R
=
T
VJ
=
123
min.
45
ms (50 Hz), sine
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
V
RRM
V
200
1.8
T
VJ
V°C=
T
VJ
°C=mA
°C
5
Package:
Part number
V
R
=
I
F
=A
V
T
C
=150°C
P
tot
275 W
T
C
°C=
E
A
S
tbd mJ
T
VJ
°C=
I
A
S
=A;L =µH
I
A
R
A
V
A
=tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
175 °C
-55
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
V
I
V
RRM
FAV
F
=
=
=
200
45
0.86
45
T
VJ
=45°C
tbd 100
DSA 90 C 200HB
V
A
V
200
V200
25
25
t
p
=10
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
non-repetitive avalanche energy
repetitive avalanche current
Conditions Unit
0.86
T
VJ
°C
=25
C
J
115 pF
j
unction capacitance V
R
=V; f = 1 MHz
100 T
VJ
=°C
125
125
I
F
=A90 T
VJ
=°C
25 V
1.18
I
F
=A45
I
F
=A90 V1.14
V
F0
V0.52
T
VJ
= 175 °C
r
F
6.5
m
TO-247AD
threshold voltage
slope resistance for power loss calculation only
25
rectangular, d = 0.5
2x
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
Backside: cathode
IXYS reserves the right to change limits, conditions and dimensi
© 2007 IXYS all rights reserved
20070703a
Data according to IEC 60747and per diode unless otherwise specified
DSA 90 C 200HB
preliminary
I
RMS
A
per pin* 70
R
thCH
K/W
0.25
M
D
Nm1.2
mounting torque 0.8
T
st
°C
150
storage temperature -55
Weight g
6
Symbol Definition Ratings
typ. max.min.
Conditions
RMS current
thermal resistance case to heatsink
Unit
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-247AD
F
C
N
120
mounting force with clip 20
Symbol Inches Millimeters
min max min max
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e0.215BSC5.46BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S0.242BSC6.14BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D10.515-13.07-
D2 0.020 0.053 0.51 1.35
E10.530-13.45-
ØP1 - 0.291 - 7.39
IXYS reserves the right to change limits, conditions and dimensi
© 2007 IXYS all rights reserved
20070703a
Data according to IEC 60747and per diode unless otherwise specified
DSA 90 C 200HB
preliminary
IXYS reserves the right to change limits, conditions and dimensi
© 2006 IXYS all rights reserved
0629
Data according to IEC 60747and per diode unless otherwise specified
0.2 0.4 0.6 0.8 1.0 1.2 1.4
1
10
100
0 40 80 120 160 200
0.001
0.010
0.100
1.000
10.000
0 10 20 30 40 50 60 70 80 90
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1
0.1
1
0 40 80 120 160
0
10
20
30
40
50
60
70
80
90
100
IF(AV) [A]
TC [°C]
t [s]
0 50 100 150 200
10
100
1000
CT [pF]
IR [mA]
IF [A]
VF [V] VR [V] VR [V]
ZthJC [K/W]
25°C
0.08
DC
0.25
0.33
Single Pulse
d = 0.5
TVJ = 150°C
IF(AV) [A]
P(AV) [W]
DSA90C200HB
D = 0.5
0.17
TVJ =
150°C
125°C
25°C 50°C
75°C
100°C
125°C TVJ= 25°C
d =
DC
0.5
0.33
0.25
0.17
0.08
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current IR
versus reverse voltage VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
Fig. 4 Avg: forward current IF(AV)
versus case temperature TC
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
20070703a