The IRKCS303.. Schottky rectifier Common Cathode has been optimized
for low reverse leakage at high temperature. The proprietary barrier technol-
ogy allows for reliable operation up to 150°C junction temperature. Typical
applications are in high current switching power supplies, plating power
supplies, UPS systems, converters, free-wheeling diodes, welding, and
reverse battery protection.
175°C TJ operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
UL pending
TOTALLY LEAD-FREE, RoHS Compliant
Description/ Features
Major Ratings and Characteristics
IF(AV) Rectangular 300 A
waveform
VRRM 100 V
IFSM @ tp = 5 μs sine 22000 A
VF@ 150Apk, TJ=125°C 1.0 V
TJrange - 55 to 175 °C
Characteristics Values Units
SCHOTTKY RECTIFIER
IRKCS303/100P
300 Amp
Bulletin I27291 12/06
1
Outline TO-240AA
www.irf.com
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
-
-
+
(1)
(2)
(3)
IRKCS303/100P
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Bulletin I27291 12/06
www.irf.com
IF(AV) Max. Average Forward Per Module 300 A 50% duty cycle @ TC = 96 °C, rectangular wave form
Current Per Leg 150
IFSM Max. Peak One Cycle Non-Repetitive 22000 5μs Sine or 3μs Rect. pulse
Surge Current 2500 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 15 mJ TJ = 25 °C, IAS
= 5.5 Amps, L = 1mH
IAR Repetitive Avalanche Current 1 A Current decaying linearly to zero in 1 μsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Parameters IRKCS303/100P
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Voltage Ratings
Absolute Maximum Ratings
Following any rated
load condition and with
rated VRRM applied
Parameters Values Units Conditions
A
(1) Pulse Width < 500μs
TJMax. Junction Temperature Range -55 to 175 °C
Tstg Max. Storage Temperature Range -55 to 175 °C
RthJC Max. Thermal Resistance, Junction 0.45 °C/W DC operation
to Case (Per Leg)
RthCS Max. Thermal Resistance, case 0.1 °C/W Mounting Surface, smooth and greased
to Heatsink
wt Approximate Weight 110 (4) gr (oz)
T Mounting Torque ± 10% to heatsink 5 Nm
busbar 4
Case Style TO - 240AA JEDEC
Thermal-Mechanical Specifications
Parameters Values Units Conditions
VFM Max. Forward Voltage Drop 0.95 V @ 150A
(1) 1.28 V @ 300A
1.0 V @ 150A
1.06 V @ 300A
IRM Max. Reverse Leakage Current 4.5 mA TJ = 25 °C
(1) 60 mA TJ = 125 °C
CTMax. Junction Capacitance 4150 pF VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C
LSTypical Series Inductance 7.0 nH From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change 10000 V/ μs (Rated VR)
VINS RMS isolation voltage (1 sec) 3500 V 50 Hz, circuit to base, all terminals shorted
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Parameters Values Units Conditions
Electrical Specifications
100
IRKCS303/100P
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Bulletin I27291 12/06
www.irf.com
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - IF (A)
Reverse Current - IR (mA)
Reverse Voltage - VR (V)
Reverse Voltage - VR (V)
Junction Capacitance - CT (pF)
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance ZthJC (°C/W)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.2
D = 0.25
D = 0.33
D = 0.5
D = 0.75
10 20 30 40 50 60 70 80 90 100
0.001
0.01
0.1
1
10
100
1000
25°C
125°C
175°C
0 102030405060708090100
100
1000
10000
Tj = 25°C
IRKCS303/100P
4
Bulletin I27291 12/06
www.irf.com
Fig. 8 - Unclamped Inductive Test Circuit
FREE- W HEEL
DIODE
40HFL40S02
CURRENT
MONITOR
HIG H-SPEED
SWITCH
IRFP460
L
DUT
Rg = 25 o h m
Vd = 25 Volt
+
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1
= 80% rated VR
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics
Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A)
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
Non-Repetitive Surge Current - IFSM (A)
050 100 150 200 250 300 35
0
0
20
40
60
80
100
120
140
160
180
DC
Square wave (D=0.50)
80% rated Vr applied
see note (2)
0 50 100 150 200 250
0
20
40
60
80
100
120
140
160
180
180°
120°
90°
60°
30°
DC
RMS limit
1000
10000
100000
10 100 1000 10000
At Any Rated Load Condition
And With Rated V Applied
Following Surge
RRM
IRKCS303/100P
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Bulletin I27291 12/06
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Outline Table
Dimensions are in millimeters and [inches]
Ordering Information Table
IR KC S 30 3 / 100 P
Device Code
15
24
3
1- International Rectifier
2- Circuit Configuration
KC = Add-A-Pak - 2 diodes/common cathode
3- S = Schottky Diode
4- Average Rating (x10)
5- Product Silicon Identification
6- Voltage Rating (100 = 100V)
7- Lead-Free
67
IRKCS303/100P
6
Bulletin I27291 12/06
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 12/06
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
