DSA90C200HB Schottky Diode Gen VRRM = 200 V I FAV = 2x VF = 45 A 0.86 V High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA90C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Rectifiers in switch mode power supplies (SMPS) Free wheeling diode in low voltage converters Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031d DSA90C200HB Ratings Schottky Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VR = 200 V TVJ = 25C 900 A VR = 200 V TVJ = 125C 5 mA TVJ = 25C 0.96 V 1.18 V 0.86 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 45 A IF = 90 A IF = 45 A IF = 90 A TVJ = 125 C TC = 145C rectangular 1.14 V T VJ = 175 C 45 A TVJ = 175 C 0.52 V d = 0.5 for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = TVJ = 25C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved typ. 6.5 m 0.55 K/W K/W 0.25 TC = 25C 24 V f = 1 MHz 275 820 261 Data according to IEC 60747and per semiconductor unless otherwise specified W A pF 20131031d DSA90C200HB Package Ratings TO-247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 70 Unit A -55 175 C -55 150 C 150 C 1) Weight 6 MD mounting torque FC mounting force with clip Product Marking 0.8 1.2 Nm 20 120 N Part number D S A 90 C 200 HB IXYS Logo g = = = = = = = Diode Schottky Diode low VF Current Rating [A] Common Cathode Reverse Voltage [V] TO-247AD (3) XXXXXXXXX Part No. Zyyww Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number DSA90C200HB Equivalent Circuits for Simulation I V0 R0 Marking on Product DSA90C200HB * on die level Delivery Mode Tube Code No. 502854 T VJ = 175 C Schottky V 0 max threshold voltage 0.52 V R 0 max slope resistance * 3.9 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031d DSA90C200HB Outlines TO-247 A E A2 O P1 OP D2 S Q D1 D 2x E2 4 1 2 3 L1 E1 L 2x b2 b4 C 3x b A1 2x e 1 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2 Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 OP Q S b b2 b4 c D1 D2 E1 O P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131031d DSA90C200HB Schottky 100 1000 10.000 TVJ = 175C 1.000 IF 125C IR 10 150C CT 0.100 100C [A] TVJ= 25C [mA] TVJ = 150C 125C 25C 1 0.2 [pF] 75C 0.010 50C 25C 0.001 0.4 0.6 0.8 1.0 1.2 1.4 100 0 VF [V] 70 40 80 120 160 200 VR [V] Fig. 1 Max. forward voltage drop characteristics 50 100 150 200 VR [V] Fig. 2 Typ. reverse current IR vs. rev: voltage VR 100 0 Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 100 80 80 DC d = 0.5 60 P(AV) 60 IF(AV) [A] [W] 40 d= DC 0.5 0.33 0.25 0.17 0.08 40 20 20 0 0 0 40 80 120 0 10 20 30 40 50 60 70 80 90 160 TC [C] IF(AV) [A] Fig. 5 Forward power loss characteristics Fig. 4 Avg. forward current IF(AV) vs. case temp. TC 1 ZthJC D = 0.5 0.33 [K/W] 0.25 0.17 0.08 0.1 Single Pulse 0.001 0.01 0.1 1 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131031d