2010-03-12
1
BFQ19S
1
2
2
3
NPN Silicon RF Transistor*
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5 GHz
at collector currents from 10 mA to 70 mA
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFQ19S FG 1 = B 2 = C 3 = E SOT89
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-emitter voltage VCES 20
Collector-base voltage VCBO 20
Emitter-base voltage VEBO 3
Collector current IC210 mA
Base current IB21
Total power dissipation2)
TS ≤ 85°C
Ptot 1 W
Junction temperature T
j
150 °C
Operation junction temperature range T
j
o- ... - -
Ambient temperature T
A
-65 ... 150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point3) RthJS ≤ 65 K/W
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
3For calculation of RthJA please refer to Application Note Thermal Resistance
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BFQ19S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 15 - - V
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 10 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 2 V, IC = 0
IEBO - - 100 µA
DC current gain-
IC = 70 mA, VCE = 8 V, pulse measured
hFE 70 100 140 -
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BFQ19S
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 70 mA, VCE = 8 V, f = 500 MHz
fT4 5.5 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 1.05 1.35 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.4 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 3.9 -
Noise figure
IC = 20 mA, VCE = 6 V, ZS = ZSopt,
f = 900 MHz
f = 1.8 GHz
F
-
-
1.8
3
-
-
dB
Power gain, maximum available1)
IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
11.5
7
-
-
Transducer gain
IC = 30 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
9.5
4
-
-
dB
Third order intercept point at output
VCE = 8 V, IC = 70 mA, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
IP3- 32 - dBm
1Gma = |S21/S12| (k-(k2-1)1/2)
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BFQ19S
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
100
200
300
400
500
600
700
800
900
1000
mW
1200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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BFQ19S
Package SOT89
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
0.8
0.8
2.0
1.01.2 2.5
0.7
0.45 +0.2
1) Ejector pin markings possible
1.5
30.2
-0.1
B
0.25
1)
±0.05
45˚
0.15
2.5
±0.1
4
±0.25
MB
B
0.15
±0.1
0.35
±0.2
1MAX.
10˚
1.5 ±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.1)
123
80.2
4.3 1.6
4.6
12
Pin 1
2005, June
Date code (YM)
BAW78D
Type code
Pin 1
Manufacturer
2010-03-12
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BFQ19S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
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