IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70C, N>30,000cycles) Isolated head sink (terminal to base). CIRCUIT DIAGRAM C C C C E E E G E TERMINALS Weight: 1200(g) o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN900D45A V V 4,500 20 900 A 1,800 900 A 1,800 o C -40 ~ +125 o C -40 ~ +125 VRMS 6,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time Symbol Unit Min. Typ. Max. Test Conditions 50 5.5 6.0 130 1.5 1.6 2.2 1.9 3.6 4.2 18 100 +500 tbd 7.5 2.5 3.0 3.0 5.5 5.0 0.6 1.0 VCE=4,500V, VGE=0V, Tj=25 C o VCE=4,500V, VGE=0V, Tj=125 C o VGE=20V, VCE=0V, Tj=25 C o IC=900A, VGE=15V, Tj=125 C o VCE=10V, IC=900mA, Tj=25 C o VCE=10V,VGE=0V, f=100kHz, Tj=25 C o VCE=10V,VGE=0V, f=100kHz, Tj=25 C VCC=2,600V, Ic=900A L=100nH RG=2.2 (3) o VGE=15V, Tj=125 C o IF=900A, VGE=0V, Tj=125 C Vcc=2,600V, IF=900A, L=100nH o Tj=125 C VCC=2,600V, Ic=900A, L=100nH RG=2.2 (3) o VGE=15V, Tj=125 C I CES mA IGES VCE(sat) VGE(TO) Cies Rge tr ton tf toff VFM nA V V nF V -500 4.5 - trr s - s Turn On Loss Eon(10%) J/P 2.2 3.0 Turn Off Loss Eoff(10%) J/P 2.0 2.5 Reverse Recovery Loss Err(10%) J/P 1.1 1.5 Stray inductance module LSCE nH 13 IGBT Rth(j-c) 0.008 Thermal Impedance K/W Junction to case FWD Rth(j-c) 0.016 Contact Thermal Impedance Rth(c-f) K/W 0.006 Case to fin Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. http://store.iiic.cc/ o P1 IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A Ls LLOAD Vcc Rg G/D Fig.1 Switching test circuit Ic Vce Ls= VL t 0 VL dIc d t=tL ( ) tL Fig.2 Definition of Ls Ic Ic Vce 90% Vce Vce 0.1Vce 90% Irm 0 0 Vge 10% t1 10% 10% 10% tr ton t3 t4 t t2 0 0 90% t tf toff t7 t8 t6 t8 Eon(10%)= Ic Vce dt t3 t2 Eoff(10%)= Ic Vce dt t7 t6 Eon(Full)= Ic Vce dt 0.5Irm 0.1IF 0 t t Vge t5 t4 t1 t 10% Eoff(Full)= Ic Vce dt t5 Fig.3 Definition of switching loss http://store.iiic.cc/ trr IF -Ic t9 t11 t12 t10 t12 Err(10%)= IFVce dt t11 t10 Err(Full)= IFVce dt t9 P2 IGBT MODULE Spec.No.IGBT-SP-02008 R4 P3 MBN900D45A TYPICAL TYPICAL 1800 1800 13V Tc=125 Tc=25 VGE=15V 13V 1500 1500 VGE=15V 1200 Collector Curent , Ic (A) Collector Curent , Ic (A) 11V 900 1200 11V 900 600 600 9V 9V 300 300 7V 5V 10 0 0 2 4 6 8 TYPICAL 1800 VGE=0V Tc=25 Tc=125 Forward Curent , IF (A) 1500 1200 900 600 300 0 1 2 3 4 5 6 0 2 4 6 8 7V 5V 10 Collector to Emitter Voltage, VCE(V) Collector to Emitter Voltage, VCE(V) Collector Current vs.Collector to Emitter Voltage 0 0 7 Forward Voltage, VF(V) Forward Voltage of free-wheeling diode http://store.iiic.cc/ Collector Current vs.Collector to Emitter Voltage IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A TYPICAL 3.0 GE=15VRG=2.2 VD=2600VL100nH V Condition GE=15VR G=2.2 D V Tc=125 V =2600VL100nHTc=125 Ic Ic Vce 90% 90% Eon(Full) 10% 10% t1 0 Eon(Full)= t 90% t3 t2 Ic Vce dt Ic Vce dt t1 1.5 1.0 t tf tof f t7 t8 Eoff(10%) t6 t8 Eon(10%) Turn-off Loss , Eoff (J/pulse) 2.0 10% Vge t5 t2 t4 Eon(10%)= 0 t tr ton t3 t4 2.0 t Vge 10% 0 Turn-on Loss , Eon (J/pulse) Vce 10% 0 Eoff(Full) Inductive load Inductive load 2.5 TYPICAL Condition Condition 2.5 Eoff(10%)= t7 t6 Eoff(Full)= 1.5 t5 Ic Vce dt Ic Vce dt 1.0 0.5 0.5 0.0 0.0 0 500 Collector Curent , Ic (A) 1000 0 TYPICAL TYPICAL 4.0 Condition Condition V 1000 Turn-off Loss vs.Collector Current Turn-on Loss vs.Collector Current 2.5 500 Collector Curent , Ic (A) GE=15VR G=2.2 D toff V =2600VL100nHTc=125 Inductive load 3.5 Vce 0.1Vce Irm Condition Condition 0.5Irm 0.1IF 0 trr IF V =2600VL100nHTc=125 t9 t11 t12 t10 t12 Err(10%)= Err(Full) IFVce dt t11 t10 Err(Full)= 1.5 t9 IFVce dt Err(10%) 1.0 Switching time , ton , tr , toff , tf , trr (us) -Ic Reverse Recovery Loss , Err (J/pulse) GE=15VRG=2.2 D V t 2.0 3.0 Inductive load 2.5 ton 2.0 tf 1.5 tr 1.0 0.5 0.5 0.0 trr 0.0 0 500 1000 Forward Current , IF (A) 0 500 Collector Current , Ic (A) Switching time vs. Collector current Recovery Loss vs.Forward Current http://store.iiic.cc/ 1000 P4 IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A TYPICAL TYPICAL 6.0 4.0 5.0 Eon(full) 4.0 Turn-off Loss , Eoff (J/pulse) Turn-on Loss , Eon (J/pulse) 3.0 3.0 Condition Condition VGE=15VIc=900A VD=2600VL100nH Tc=125 Inductive load 2.0 Eon(10%) Ic Vce 90% 1.0 t1 Eoff(10%) Condition Condition GE=15VIc=900A D V V =2600VL100nHTc=125 Inductive load Ic Vce 10% 10% Vge 10% 0 2.0 90% 10% 0 Eoff(full) 0 10% t Vge 90% 0 t tr ton t3 t4 1.0 t t5 t2 t7 t4 Eon(10%)= t3 t2 Eon(Full)= t6 t8 t8 Ic Vce dt Eoff(10%)= t7 t6 Ic Vce dt Eoff(Full)= t1 Ic Vce dt Ic Vce dt t5 0.0 0.0 0 2 4 6 Gate Resistance , Rg ( 8 ) 10 Turn-on Loss vs. Gate Resistance TYPICAL 4.0 Condition Condition GE=15VIF=900A D V =2600VL100nHTc=125 Inductive load Vce 0.1Vce Irm 0.5Irm 0.1IF 0 t trr IF 3.0 -Ic t9 t11 t12 t10 t12 Err(10%)= IF Vce dt t11 t10 Err(Full)= t9 IFVce dt 2.0 Err(full) 1.0 Err(10%) 0.0 0 2 4 6 ) 8 0 2 4 6 Gate Resistance , Rg ( ) 8 Turn-off Loss vs. Gate Resistance V Reverse Recovery Loss , Err (J/pulse) t tf tof f 10 Gate Resistance , Rg ( Recovery Loss vs. Gate Resistance http://store.iiic.cc/ 10 P5 IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A 15 TYPICAL Condition Condition Vcc2250V Ic=900A Tc=25 10 VGE (V) 5 0 -5 -10 -15 -8 -6 -4 -2 0 2 QGC) Qg-VGE curve http://store.iiic.cc/ 4 6 8 P6 IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A Maximum Transient thermal impedance : Zth(j-c) (K/W) 0.1 FWD 0.01 IGBT 0.001 0.0001 0.001 0.01 0.1 Time : t(s) 1 10 Transient Thermal Impedance Curve Negative environmental impact material Please note the following negative environmental impact materials are contained in the product in order to keep product characteristic and reliability level. Material Contained part Lead (Pb) and its compounds Solder http://store.iiic.cc/ P7 IGBT MODULE Spec.No.IGBT-SP-02008 R4 MBN900D45A HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4. 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